Electrically driven uniaxial stress device for tuning <i>in situ</i> semiconductor quantum dot symmetry and exciton emission in cryostat

Hao Chen; Xiuming Dou; Kun Ding; Baoquan Sun

doi:10.1088/1674-4926/40/7/072901

J. Semicond. > 2019, Volume 40 > Issue 7 > 072901

ARTICLES

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

Hao Chen^{1, 2}, Xiuming Dou^{1, 2,}, Kun Ding¹ and Baoquan Sun^{1, 2,}

+ Author Affiliations

Corresponding author: Xiuming Dou, Email: xmdou04@semi.ac.cn; Baoquan Sun, bqsun@semi.ac.cn

DOI: 10.1088/1674-4926/40/7/072901

Abstract: Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.

Key words: uniaxial stress, electrically driven device, low temperature, quantum dots, thin film materials

References

[1]	Stevenson R M, Hudson A J, Bennett A J, et al. Evolution of entanglement between distinguishable light states. Phys Rev Lett, 2008, 101(17), 170501 doi: 10.1103/PhysRevLett.101.170501
[2]	Gao W B, Fallahi P, Togan E, et al. Observation of entanglement between a quantum dot spin and a single photon. Nature, 2012, 491(7424), 426 doi: 10.1038/nature11573
[3]	Lodahl P, Mahmoodian S, Stobbe S. Interfacing single photons and single quantum dots with photonic nanostructures. Rev Mod Phys, 2015, 87, 347 doi: 10.1103/RevModPhys.87.347
[4]	Aharonovich I, Englund D, Toth M. Solid-state single-photon emitters. Nat Photonics, 2016, 10, 631 doi: 10.1038/nphoton.2016.186
[5]	Delteil A, Sun Z, Gao W B, et al. Generation of heralded entanglement between distant hole spins. Nat Phys, 2016, 12, 218 doi: 10.1038/nphys3605
[6]	Senellart P, Solomon G, White A. High-performance semiconductor quantum-dot single-photon sources. Nat Nanotechnol, 2017, 12(11), 1026 doi: 10.1038/nnano.2017.218
[7]	Wang H, Hu H, Chung T H, et al. On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability. Phys Rev Lett, 2019, 122(11), 113602 doi: 10.1103/PhysRevLett.122.113602
[8]	Plumhof J D, Trotta R, Rastelli A, et al. Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots. Nanoscale Res Lett, 2012, 7(1), 336 doi: 10.1186/1556-276X-7-336
[9]	Bennett A J, Pooley M A, Stevenson R M, et al. Electric-field-induced coherent coupling of the exciton states in a single quantum dot. Nat Phys, 2010, 6(12), 947 doi: 10.1038/nphys1780
[10]	Ghali M, Ohtani K, Ohno Y, et al. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field. Nat Commun, 2012, 3, 661 doi: 10.1038/ncomms1657
[11]	Trotta R, Zallo E, Ortix C, et al. Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry. Phys Rev Lett, 2012, 109(14), 147401 doi: 10.1103/PhysRevLett.109.147401
[12]	Wu X F, Wei H, Dou X M, et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots. Europhys Lett, 2014, 107(2), 27008 doi: 10.1209/0295-5075/107/27008
[13]	Wang J, Gong M, Guo G C, et al. Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses. Appl Phys Lett, 2012, 101(6), 2513 doi: 10.1063/1.4745188
[14]	Dou X, Sun B, Wang B, et al. Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress. Chin Phys Lett, 2008, 25(3), 1120 doi: 10.1088/0256-307X/25/3/085
[15]	Keil R, Zopf M, Chen Y, et al. Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions. Nat Commun, 2017, 8, 15501 doi: 10.1038/ncomms15501
[16]	Zhang J, Wildmann J S, Ding F, et al. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots. Nat Commun, 2015, 6, 10067 doi: 10.1038/ncomms10067
[17]	Ding F, Singh R, Plumhof J D, et al. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress. Phys Rev Lett, 2010, 104(6), 067405 doi: 10.1103/PhysRevLett.104.067405
[18]	Desai S B, Seol G, Kang J S, et al. Strain-induced indirect to direct bandgap transition in multi layer WSe₂. Nano Lett, 2014, 14(8), 4592 doi: 10.1021/nl501638a
[19]	Conley H J, Wang B, Ziegler J I, et al. Bandgap engineering of strained monolayer and bilayer MoS₂. Nano Lett, 2013, 13(8), 3626 doi: 10.1021/nl4014748
[20]	Cardona M. Piezo-electroreflectance in Ge, GaAs, and Si. Phys Rev, 1968, 172(3), 816 doi: 10.1103/PhysRev.172.816
[21]	Seidl S, Kroner M, Högele, Alexander, et al. Effect of uniaxial stress on excitons in a self-assembled quantum dot. Appl Phys Lett, 2006, 88(20), 2513 doi: 10.1063/1.2204843
[22]	Gong M, Zhang W, Guo G C, et al. exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress. Phys Rev Lett, 2011, 106(22), 227401 doi: 10.1103/PhysRevLett.106.227401
[23]	Xiong W, Xu X, Luo J W, et al. fundamental intrinsic lifetimes in semiconductor self-assembled quantum dots. Phys Rev Appl, 2018, 10(4), 044009 doi: 10.1103/PhysRevApplied.10.044009
[24]	Troiani F, Tejedor C. Entangled photon pairs from a quantum-dot cascade decay: The effect of time reordering. Phys Rev B, 2008, 78(15), 155305 doi: 10.1103/PhysRevB.78.155305

Fig. 1. (Color online) (a) Photograph of a polished metal sheet with a sample on the center, where metal sheet as a flexible substrate of absorbed sample. (b) Photograph of the electrically driven uniaxial stress device fixed on the cold chamber of cryostat.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) PL intensity ratio R₂/R₁ of ruby as a function of temperature. (b) Ruby PL spectrum at 15 K corresponding a ratio of PL intensity of R₂ and R₁.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Stress-dependent spectra of GaAs at 15 K, measured for applied uniaxial tensile stress from zero to 879.5 MPa. (b) PL peak energy as a function of tensile (black solid squares) and release (red solid circles) stresses, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) PL spectra for X^*, X and XX in QD measured under the tensile stress of 0, 104.4, 201.2, 321.7, 391.9, 500.7, 614.2 and 717.6 MPa, respectively. (b) The obtained stress coefficients for X^*, X and XX are –20.19, –20.26 and –18.93 μeV/MPa, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) FSS change of the exciton in single QD as a function of strain applied along (100) and (010) directions, respectively. (b) Charged exciton decay times of single QD as a function of strain applied along (100) and (010) directions, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a)–(d) Stress-dependent spectra of single QD at 15 K. As shown in (b) and (d), PL spectra of the horizontal (red lines) and vertical (black lines) polarized components of exciton and biexciton overlap at the stresses of 491.8 and 960.4 MPa, respectively. At 698.3 MPa as shown in (c), across generation color coincidence for XX and X transition energies is achieved. (e)–(h) Level schemes showing the XX-X cascade emissions accordingly.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Stress-dependent PL spectra of monolayer MoS₂ at 15 K, corresponding motor precession from 0 to 330 000 steps.

DownLoad: Full-Size Img PowerPoint

[1]	Stevenson R M, Hudson A J, Bennett A J, et al. Evolution of entanglement between distinguishable light states. Phys Rev Lett, 2008, 101(17), 170501 doi: 10.1103/PhysRevLett.101.170501
[2]	Gao W B, Fallahi P, Togan E, et al. Observation of entanglement between a quantum dot spin and a single photon. Nature, 2012, 491(7424), 426 doi: 10.1038/nature11573
[3]	Lodahl P, Mahmoodian S, Stobbe S. Interfacing single photons and single quantum dots with photonic nanostructures. Rev Mod Phys, 2015, 87, 347 doi: 10.1103/RevModPhys.87.347
[4]	Aharonovich I, Englund D, Toth M. Solid-state single-photon emitters. Nat Photonics, 2016, 10, 631 doi: 10.1038/nphoton.2016.186
[5]	Delteil A, Sun Z, Gao W B, et al. Generation of heralded entanglement between distant hole spins. Nat Phys, 2016, 12, 218 doi: 10.1038/nphys3605
[6]	Senellart P, Solomon G, White A. High-performance semiconductor quantum-dot single-photon sources. Nat Nanotechnol, 2017, 12(11), 1026 doi: 10.1038/nnano.2017.218
[7]	Wang H, Hu H, Chung T H, et al. On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability. Phys Rev Lett, 2019, 122(11), 113602 doi: 10.1103/PhysRevLett.122.113602
[8]	Plumhof J D, Trotta R, Rastelli A, et al. Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots. Nanoscale Res Lett, 2012, 7(1), 336 doi: 10.1186/1556-276X-7-336
[9]	Bennett A J, Pooley M A, Stevenson R M, et al. Electric-field-induced coherent coupling of the exciton states in a single quantum dot. Nat Phys, 2010, 6(12), 947 doi: 10.1038/nphys1780
[10]	Ghali M, Ohtani K, Ohno Y, et al. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field. Nat Commun, 2012, 3, 661 doi: 10.1038/ncomms1657
[11]	Trotta R, Zallo E, Ortix C, et al. Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry. Phys Rev Lett, 2012, 109(14), 147401 doi: 10.1103/PhysRevLett.109.147401
[12]	Wu X F, Wei H, Dou X M, et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots. Europhys Lett, 2014, 107(2), 27008 doi: 10.1209/0295-5075/107/27008
[13]	Wang J, Gong M, Guo G C, et al. Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses. Appl Phys Lett, 2012, 101(6), 2513 doi: 10.1063/1.4745188
[14]	Dou X, Sun B, Wang B, et al. Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress. Chin Phys Lett, 2008, 25(3), 1120 doi: 10.1088/0256-307X/25/3/085
[15]	Keil R, Zopf M, Chen Y, et al. Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions. Nat Commun, 2017, 8, 15501 doi: 10.1038/ncomms15501
[16]	Zhang J, Wildmann J S, Ding F, et al. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots. Nat Commun, 2015, 6, 10067 doi: 10.1038/ncomms10067
[17]	Ding F, Singh R, Plumhof J D, et al. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress. Phys Rev Lett, 2010, 104(6), 067405 doi: 10.1103/PhysRevLett.104.067405
[18]	Desai S B, Seol G, Kang J S, et al. Strain-induced indirect to direct bandgap transition in multi layer WSe₂. Nano Lett, 2014, 14(8), 4592 doi: 10.1021/nl501638a
[19]	Conley H J, Wang B, Ziegler J I, et al. Bandgap engineering of strained monolayer and bilayer MoS₂. Nano Lett, 2013, 13(8), 3626 doi: 10.1021/nl4014748
[20]	Cardona M. Piezo-electroreflectance in Ge, GaAs, and Si. Phys Rev, 1968, 172(3), 816 doi: 10.1103/PhysRev.172.816
[21]	Seidl S, Kroner M, Högele, Alexander, et al. Effect of uniaxial stress on excitons in a self-assembled quantum dot. Appl Phys Lett, 2006, 88(20), 2513 doi: 10.1063/1.2204843
[22]	Gong M, Zhang W, Guo G C, et al. exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress. Phys Rev Lett, 2011, 106(22), 227401 doi: 10.1103/PhysRevLett.106.227401
[23]	Xiong W, Xu X, Luo J W, et al. fundamental intrinsic lifetimes in semiconductor self-assembled quantum dots. Phys Rev Appl, 2018, 10(4), 044009 doi: 10.1103/PhysRevApplied.10.044009
[24]	Troiani F, Tejedor C. Entangled photon pairs from a quantum-dot cascade decay: The effect of time reordering. Phys Rev B, 2008, 78(15), 155305 doi: 10.1103/PhysRevB.78.155305

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 4023 Times PDF downloads: 72 Times Cited by: 0 Times

History

Received: 04 May 2019 Revised: 29 May 2019 Online: Accepted Manuscript: 04 June 2019Uncorrected proof: 10 June 2019Published: 05 July 2019

Article Navigation > Journal of Semiconductors > 2019 > 40(7): 072901

Hao Chen, Xiuming Dou, Kun Ding, Baoquan Sun. Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat[J]. Journal of Semiconductors, 2019, 40(7): 072901. doi: 10.1088/1674-4926/40/7/072901 ****H Chen, X M Dou, K Ding, B Q Sun, Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat[J]. J. Semicond., 2019, 40(7): 072901. doi: 10.1088/1674-4926/40/7/072901.

Citation:

Hao Chen, Xiuming Dou, Kun Ding, Baoquan Sun. Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat[J]. Journal of Semiconductors, 2019, 40(7): 072901. doi: 10.1088/1674-4926/40/7/072901 ****

H Chen, X M Dou, K Ding, B Q Sun, Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat[J]. J. Semicond., 2019, 40(7): 072901. doi: 10.1088/1674-4926/40/7/072901.

Citation:

PDF( 1402 KB)

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

DOI: 10.1088/1674-4926/40/7/072901

1.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Corresponding author: Email: xmdou04@semi.ac.cn; bqsun@semi.ac.cn
Received Date: 2019-05-04
Revised Date: 2019-05-29
Published Date: 2019-07-01

Abstract

Abstract

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.
- uniaxial stress,
- electrically driven device,
- low temperature,
- quantum dots,
- thin film materials

FullText(HTML)

References(24)

References

[1]	Stevenson R M, Hudson A J, Bennett A J, et al. Evolution of entanglement between distinguishable light states. Phys Rev Lett, 2008, 101(17), 170501 doi: 10.1103/PhysRevLett.101.170501
[2]	Gao W B, Fallahi P, Togan E, et al. Observation of entanglement between a quantum dot spin and a single photon. Nature, 2012, 491(7424), 426 doi: 10.1038/nature11573
[3]	Lodahl P, Mahmoodian S, Stobbe S. Interfacing single photons and single quantum dots with photonic nanostructures. Rev Mod Phys, 2015, 87, 347 doi: 10.1103/RevModPhys.87.347
[4]	Aharonovich I, Englund D, Toth M. Solid-state single-photon emitters. Nat Photonics, 2016, 10, 631 doi: 10.1038/nphoton.2016.186
[5]	Delteil A, Sun Z, Gao W B, et al. Generation of heralded entanglement between distant hole spins. Nat Phys, 2016, 12, 218 doi: 10.1038/nphys3605
[6]	Senellart P, Solomon G, White A. High-performance semiconductor quantum-dot single-photon sources. Nat Nanotechnol, 2017, 12(11), 1026 doi: 10.1038/nnano.2017.218
[7]	Wang H, Hu H, Chung T H, et al. On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability. Phys Rev Lett, 2019, 122(11), 113602 doi: 10.1103/PhysRevLett.122.113602
[8]	Plumhof J D, Trotta R, Rastelli A, et al. Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots. Nanoscale Res Lett, 2012, 7(1), 336 doi: 10.1186/1556-276X-7-336
[9]	Bennett A J, Pooley M A, Stevenson R M, et al. Electric-field-induced coherent coupling of the exciton states in a single quantum dot. Nat Phys, 2010, 6(12), 947 doi: 10.1038/nphys1780
[10]	Ghali M, Ohtani K, Ohno Y, et al. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field. Nat Commun, 2012, 3, 661 doi: 10.1038/ncomms1657
[11]	Trotta R, Zallo E, Ortix C, et al. Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry. Phys Rev Lett, 2012, 109(14), 147401 doi: 10.1103/PhysRevLett.109.147401
[12]	Wu X F, Wei H, Dou X M, et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots. Europhys Lett, 2014, 107(2), 27008 doi: 10.1209/0295-5075/107/27008
[13]	Wang J, Gong M, Guo G C, et al. Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses. Appl Phys Lett, 2012, 101(6), 2513 doi: 10.1063/1.4745188
[14]	Dou X, Sun B, Wang B, et al. Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress. Chin Phys Lett, 2008, 25(3), 1120 doi: 10.1088/0256-307X/25/3/085
[15]	Keil R, Zopf M, Chen Y, et al. Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions. Nat Commun, 2017, 8, 15501 doi: 10.1038/ncomms15501
[16]	Zhang J, Wildmann J S, Ding F, et al. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots. Nat Commun, 2015, 6, 10067 doi: 10.1038/ncomms10067
[17]	Ding F, Singh R, Plumhof J D, et al. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress. Phys Rev Lett, 2010, 104(6), 067405 doi: 10.1103/PhysRevLett.104.067405
[18]	Desai S B, Seol G, Kang J S, et al. Strain-induced indirect to direct bandgap transition in multi layer WSe₂. Nano Lett, 2014, 14(8), 4592 doi: 10.1021/nl501638a
[19]	Conley H J, Wang B, Ziegler J I, et al. Bandgap engineering of strained monolayer and bilayer MoS₂. Nano Lett, 2013, 13(8), 3626 doi: 10.1021/nl4014748
[20]	Cardona M. Piezo-electroreflectance in Ge, GaAs, and Si. Phys Rev, 1968, 172(3), 816 doi: 10.1103/PhysRev.172.816
[21]	Seidl S, Kroner M, Högele, Alexander, et al. Effect of uniaxial stress on excitons in a self-assembled quantum dot. Appl Phys Lett, 2006, 88(20), 2513 doi: 10.1063/1.2204843
[22]	Gong M, Zhang W, Guo G C, et al. exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress. Phys Rev Lett, 2011, 106(22), 227401 doi: 10.1103/PhysRevLett.106.227401
[23]	Xiong W, Xu X, Luo J W, et al. fundamental intrinsic lifetimes in semiconductor self-assembled quantum dots. Phys Rev Appl, 2018, 10(4), 044009 doi: 10.1103/PhysRevApplied.10.044009
[24]	Troiani F, Tejedor C. Entangled photon pairs from a quantum-dot cascade decay: The effect of time reordering. Phys Rev B, 2008, 78(15), 155305 doi: 10.1103/PhysRevB.78.155305

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

DOI: 10.1088/1674-4926/40/7/072901

Abstract

References

Proportional views

Catalog

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

DOI: 10.1088/1674-4926/40/7/072901

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content