Citation: |
Bo Gu. High temperature magnetic semiconductors: narrow band gaps and two-dimensional systems[J]. Journal of Semiconductors, 2019, 40(8): 081504. doi: 10.1088/1674-4926/40/8/081504
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B Gu, High temperature magnetic semiconductors: narrow band gaps and two-dimensional systems[J]. J. Semicond., 2019, 40(8): 081504. doi: 10.1088/1674-4926/40/8/081504.
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High temperature magnetic semiconductors: narrow band gaps and two-dimensional systems
doi: 10.1088/1674-4926/40/8/081504
More Information-
Abstract
Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed. -
References
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