Citation: 
Jing Teng, Nan Liu, Yongqing Li. Mndoped topological insulators: a review[J]. Journal of Semiconductors, 2019, 40(8): 081507. doi: 10.1088/16744926/40/8/081507
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J Teng, N Liu, Y Q Li, Mndoped topological insulators: a review[J]. J. Semicond., 2019, 40(8): 081507. doi: 10.1088/16744926/40/8/081507.


Abstract
Topological insulators (TIs) host robust edge or surface states protected by timereversal symmetry (TRS), which makes them prime candidates for applications in spintronic devices. A promising avenue of research for the development of functional TI devices has involved doping of threedimensional (3D) TI thin film and bulk materials with magnetic elements. This approach aims to break the TRS and open a surface band gap near the Dirac point. Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed, paving a way for applications in spintronics and quantum computation. This review focuses on the research of 3D TIs doped with manganese (Mn). We summarize major progress in the study of Mn doped chalcogenide TIs, including Bi_{2}Se_{3}, Bi_{2}Te_{3}, and Bi_{2}(Te,Se)_{3}. The transport properties, in particular the anomalous Hall effect, of the Mndoped Bi_{2}Se_{3} are discussed in detail. Finally, we conclude with future prospects and challenges in further studies of Mn doped TIs. 
References
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