J. Semicond. > 2020, Volume 41 > Issue 1 > 010101

EDITORIAL

Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

Zhijie Wang1, Chao Zhao2 and Fei Ding3

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DOI: 10.1088/1674-4926/41/1/010101

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Prof. Zhanguo Wang, a world-famous semiconductor materials physicist, was born on December 29, 1938, in Zhenping County, Henan Province, China. After graduating from the Department of Physics, Nankai University in 1962, he joined the Institute of Semiconductors, Chinese Academy of Sciences, until now.

Prof. Wang has made outstanding achievements in the field of semiconductor materials and material physics. He has engaged in the study of the irradiation effect of silicon solar cells used in artificial satellites and the devices/modules in nuclear transient irradiation in his early career, which significantly contributed to the realization of atomic/hydrogen bombs and artificial satellites in China. Prof. Wang joined the Department of Solid State Physics, the University of Lund, from 1980 to 1983, where he worked on deep energy level physics and photoluminescence studies of semiconductors. He and collaborators developed a new method to identify whether the two-deep levels within a bandgap are coupled, thus solving the long-existing argument for the nature of gold-related donors and acceptors in silicon and A and B deep levels in liquid phase epitaxy grown GaAs. He proposed a physical model of deep level broadening and photoluminescence spectrum splitting in semiconductor alloys. In 1986, he joined Prof. Lanying Lin's group and grew the GaAs single crystal successfully in outer space for the first time. In 1993, he proposed a multi-level compensation model and new criteria of electrical compensation for undoped GaAs, which can not only explain the electrical conductivity of GaAs but also provide a clue for improving its quality. From 1993, he and his group work on the growth of semiconductor nanostructures and the fabrication of devices such as quantum cascade lasers, quantum dot lasers, and superluminescent diodes. He later proposed a conception of flexible substrates, which might open a new direction for developing heterostructure materials with a significant lattice mismatch.

Prof. Zhanguo Wang was awarded a number of National and Chinese Academy of Sciences Prizes and was elected the academician of the Chinese Academy of Sciences in 1995. He served as the deputy director in Division of Information Technology and Science and seventh presidium member in CAS, the deputy director of the Institute of Semiconductors, and the standing director of the Chinese Materials Research Society. In his career, he trained more than one hundred masters, Ph.D. students, and postdocs.

On December 29, 2018, Institute of Semiconductors CAS hosts a celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang and seminar on advanced semiconductor materials and devices in Xijiao Hotel in Beijing. Journal of Semiconductors invites several experts from the seminar to submit their review and original research papers in the fields of semiconductors. This special issue contains four review papers, four research papers, and one News and Views which are from Leibniz University Hannover, RWTH Aachen University, Institute of Semiconductors CAS, Suzhou Institute of Nano-Tech and Nano-Bionics CAS, Beijing Jiaotong University, etc. The latest progress and development of this field in domestic and abroad are introduced. Prof. Zhijie Wang's review paper entitled “The application of perovskite materials in solar water splitting” from Institute of Semiconductors CAS, Prof. Fei Ding's review paper entitled “Strain tunable quantum dot-based non-classical photon sources” from Leibniz University Hannover, and Prof. Chao Zhao's review paper entitled “Boron-doped III–V semiconductors for Si-based optoelectronic devices” follow Prof. Zhanguo Wang's main research direction, and introduce the latest development in semiconductor materials and devices research.

We hope this special issue will promote the academic exchange, help the development of semiconductor science, and celebrate the 60th anniversary of dedicating to scientific research of Prof. Zhanguo Wang.



1

Simulation and application of external quantum efficiency of solar cells based on spectroscopy

Guanlin Chen, Can Han, Lingling Yan, Yuelong Li, Ying Zhao, et al.

Journal of Semiconductors, 2019, 40(12): 122701. doi: 10.1088/1674-4926/40/12/122701

2

Preface to the Special Issue on A Celebration of the 100th Birthday of Prof. Kun Huang

Journal of Semiconductors, 2019, 40(9): 090101. doi: 10.1088/1674-4926/40/9/090101

3

Flexible devices: from materials, architectures to applications

Mingzhi Zou, Yue Ma, Xin Yuan, Yi Hu, Jie Liu, et al.

Journal of Semiconductors, 2018, 39(1): 011010. doi: 10.1088/1674-4926/39/1/011010

4

A simple chemical route to synthesize the umangite phase of copper selenide (Cu3Se2) thin film at room temperature

Balasaheb M. Palve, Sandesh R. Jadkar, Habib M. Pathan

Journal of Semiconductors, 2017, 38(6): 063003. doi: 10.1088/1674-4926/38/6/063003

5

Preface to the Special Topic on Devices and Circuits for Wearable and IoT Systems

Zhihua Wang, Yong Hei, Zhangming Zhu

Journal of Semiconductors, 2017, 38(10): 101001. doi: 10.1088/1674-4926/38/10/101001

6

Research progress of Si-based germanium materials and devices

Buwen Cheng, Cheng Li, Zhi Liu, Chunlai Xue

Journal of Semiconductors, 2016, 37(8): 081001. doi: 10.1088/1674-4926/37/8/081001

7

In situ TEM/SEM electronic/mechanical characterization of nano material with MEMS chip

Yuelin Wang, Tie Li, Xiao Zhang, Hongjiang Zeng, Qinhua Jin, et al.

Journal of Semiconductors, 2014, 35(8): 081001. doi: 10.1088/1674-4926/35/8/081001

8

The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole

J. V. Thombare, M. C. Rath, S. H. Han, V. J. Fulari

Journal of Semiconductors, 2013, 34(9): 093001. doi: 10.1088/1674-4926/34/9/093001

9

AC-electronic and dielectric properties of semiconducting phthalocyanine compounds:a comparative study

Safa'a M. Hraibat, Rushdi M-L. Kitaneh, Mohammad M. Abu-Samreh, Abdelkarim M. Saleh

Journal of Semiconductors, 2013, 34(11): 112001. doi: 10.1088/1674-4926/34/11/112001

10

Dielectric response and electric properties of organic semiconducting phthalocyanine thin films

A. M. Saleh, S. M. Hraibat, R. M-L. Kitaneh, M. M. Abu-Samreh, S. M. Musameh, et al.

Journal of Semiconductors, 2012, 33(8): 082002. doi: 10.1088/1674-4926/33/8/082002

11

Removal of impurities from metallurgical grade silicon by electron beam melting

Luo Dawei, Liu Ning, Lu Yiping, Zhang Guoliang, Li Tingju, et al.

Journal of Semiconductors, 2011, 32(3): 033003. doi: 10.1088/1674-4926/32/3/033003

12

CuPc/C60 heterojunction thin film optoelectronic devices

Imran Murtaza, Ibrahim Qazi, Khasan S. Karimov

Journal of Semiconductors, 2010, 31(6): 064005. doi: 10.1088/1674-4926/31/6/064005

13

Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale

An Wei, Zhao Yongwu, Wang Yongguang

Journal of Semiconductors, 2010, 31(11): 116005. doi: 10.1088/1674-4926/31/11/116005

14

Optical properties in 1D photonic crystal structure using Si/C60 multilayers

Chen Jing, Tang Jiyu, Han Peide, Chen Junfang

Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001

15

NTC and electrical properties of nickel and gold doped n-type silicon material

Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde, et al.

Journal of Semiconductors, 2009, 30(8): 083007. doi: 10.1088/1674-4926/30/8/083007

16

Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al.

Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004

17

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, et al.

Chinese Journal of Semiconductors , 2006, 27(2): 235-238.

18

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia

Chinese Journal of Semiconductors , 2006, 27(2): 229-234.

19

A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates

Zhong Xinghua, Zhou Huajie, Lin Gang, Xu Qiuxia

Chinese Journal of Semiconductors , 2006, 27(3): 448-453.

20

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using

Zhu Yong, Yan Guizhen, Wang Chengwei, Yang Zhenchuan, Fan Jie, et al.

Chinese Journal of Semiconductors , 2005, 26(1): 16-21.

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    Received: Revised: Online: Accepted Manuscript: 19 December 2019Uncorrected proof: 30 December 2019Published: 02 January 2020

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      Zhijie Wang, Chao Zhao, Fei Ding. Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang[J]. Journal of Semiconductors, 2020, 41(1): 010101. doi: 10.1088/1674-4926/41/1/010101 ****Z J Wang, C Zhao, F Ding, Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang[J]. J. Semicond., 2020, 41(1): 010101. doi: 10.1088/1674-4926/41/1/010101.
      Citation:
      Zhijie Wang, Chao Zhao, Fei Ding. Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang[J]. Journal of Semiconductors, 2020, 41(1): 010101. doi: 10.1088/1674-4926/41/1/010101 ****
      Z J Wang, C Zhao, F Ding, Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang[J]. J. Semicond., 2020, 41(1): 010101. doi: 10.1088/1674-4926/41/1/010101.

      Preface to the Special Issue on the Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

      DOI: 10.1088/1674-4926/41/1/010101
      More Information
      • Zhijie Wang:wangzj@semi.ac.cn
      • Chao Zhao:zhaochao83@gmail.com
      • Fei Ding:f.ding@fkp.uni-hannover.de
      • Published Date: 2020-01-01

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