The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

Baoshun Wang; Jiangwei Cui; Qi Guo; Qiwen Zheng; Ying Wei; Shanxue Xi

doi:10.1088/1674-4926/41/12/122102

J. Semicond. > 2020, Volume 41 > Issue 12 > 122102

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The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

Baoshun Wang^{1, 2}, Jiangwei Cui^{1, 2,}, Qi Guo^{1, 2}, Qiwen Zheng^{1, 2}, Ying Wei^{1, 2} and Shanxue Xi^{1, 2}

+ Author Affiliations

Corresponding author: Jiangwei Cui, cuijw@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/41/12/122102

Abstract: We investigate the hot carrier injection effect (HCI) and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation bias conditions in this paper. In the HCI test, the degradation of threshold voltage and saturation current decreases with the increase of fin number, which means that HCI weakens when the fin number increases. The reason is attributed to the coupling effect between fins. Moreover, irradiation is shown to weaken the degradation during the subsequent hot carrier test. The influence of irradiation on HCI is more obvious with ON bias than that of OFF bias and transmission gate bias. It is supposed that the Si–H bonds can be broken by irradiation before the HCI test, which is one reason for the irradiation influence on HCI. Besides, trapped charges are generated in the shallow trench isolation by the radiation, which could reduce the channel electric field, and then weaken the HCI.

Key words: FinFET, TID, HCI

References

[1]	Zhang E X, Fleetwood D M, Hachtel J A, et al. Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si. IEEE Trans Nucl Sci, 2017, 64, 226 doi: 10.1109/TNS.2016.2635023
[2]	Chatterjee I, Zhang E X, Bhuva B L, et al. Bias dependence of total-dose effects in bulk FinFETs. IEEE Trans Nucl Sci, 2013, 60, 4476 doi: 10.1109/TNS.2013.2287872
[3]	Chung E A, Nam K J, Nakanishi T, et al. Investigation of hot carrier degradation in bulk FinFET. 2017 IEEE International Reliability Physics Symposium, 2017
[4]	Chang W T, Cin L G, Yeh W K. Impact of fin width and back bias under hot carrier injection on double-gate FinFETs. IEEE Trans Device Mater Reliab, 2015, 15, 86 doi: 10.1109/TDMR.2014.2384737
[5]	Ma C Y, Li B, Wei Y Q, et al. FinFET reliability study by forward gated-diode method. 2008 9^th International Conference on Solid-State and Integrated-Circuit Technology, 2008, 644
[6]	Jiang H, Yin L X, Li Y, et al. Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs. 2015 IEEE International Reliability Physics Symposium, 2015
[7]	Yeh W K, Chen P Y, Shih C H, et al. The impact of fin number on device's performance and reliability in tri-gate FinFETs. 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017
[8]	Tang X Y, Lu J W, Zhang R, et al. Positive bias temperature instability and hot carrier injection of back gate ultra-thin-body In_0.53Ga_0.47As-on-insulator n-channel metal–oxide–semiconductor field-effect transistor. Chin Phys Lett, 2015, 32, 117302 doi: 10.1088/0256-307X/32/11/117302
[9]	Silvestri M, Gerardin S, Paccagnella A, et al. Channel hot carrier stress on irradiated 130-nm NMOSFETs: Impact of bias conditions during X-ray exposure. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007, 1
[10]	Zheng Q W, Cui J W, Zhou H, et al. Hot-carrier effects on total dose irradiated 65 nm n-type metal–oxide–semiconductor field-effect transistors. Chin Phys Lett, 2016, 33, 076102 doi: 10.1088/0256-307X/33/7/076102
[11]	Cui J W, Zheng Q W, Ning B X, et al. Hot-carrier effect on TID irradiated short-channel UTTB FD-SOI n-MOSFETs. IEEE Radiation Effects Data Workshop, 2018
[12]	Das N C, Nathan V, Dacus S, et al. Combined effects of hot-carrier stressing and ionizing radiation in SiO₂, NO, and ONO MOSFETs. IEEE Electron Device Lett, 1993, 14, 40 doi: 10.1109/55.215093
[13]	Yang L, Zhang Q Z, Huang Y B, et al. Total ionizing dose response and annealing behavior of bulk nFinFETs with ON-state bias irradiaiton. IEEE Trans Nucl Sci, 2018, 65, 1503 doi: 10.1109/TNS.2018.2827675
[14]	Chen Z, Ong P. Direct evidence for multiple vibrational excitationof Si-H/D bonds for hot-carrier degradation of MOS transistors.60th DRC Conference Digest Device Research Conference,2002
[15]	Zhang H, Jiang H, Fan X, et al. Effects of total-ionizing-dose irradiation on single-event response for flip-flop designs at 14-/16-nm bulk FinFET technology node. IEEE Trans Nucl Sci, 2018, 65, 1928 doi: 10.1109/TNS.2017.2781622
[16]	King M P, Wu X, Eller M, et al. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. IEEE Trans Nucl Sci, 2017, 64, 285 doi: 10.1109/TNS.2016.2634538

Fig. 1. (Color online) The structure diagram of nFinFET. (a) A 3D model of bulk FinFET. (b) A cross-section view along A–A’ direction^[13].

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Degradation of V_T for nFinFETs with different numbers of fins under HCI stress for samples with a 60 nm gate length.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Degradation of saturation current (I_DSAT) for nFinFETs with different numbers of fins under HCI stress for samples with a 60 nm gate length.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) I_DS–V_GS curves as a function of the irradiation dose for nFinFET with 8 fins and a 60 nm gate length biased at the ON state.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Degradation of V_T as a function of stress time for un-irradiated nFinFETs and for irradiated nFinFETs in different bias conditions during irradiation. (a) For 4 fin samples with a 60 nm gate length. (b) For 8 fin samples with a 60 nm gate length.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) Degradation of I_DSAT as a function of stress time for un-irradiated nFinFETs and for irradiated nFinFETs in different bias condition during irradiation. (a) For 4 fin samples with a 60 nm gate length. (b) For 8 fin samples with a 60 nm gate length.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) A schematic diagram showing that total dose irradiation causes trap holes in STI^[15].

DownLoad: Full-Size Img PowerPoint

Table 1. V_T degradation percentage of un-irradiated devices, OFF-bias irradiated devices, TG-bias irradiated devices, and ON-bias irradiated devices in different groups after 6000 s hot carrier stress.

Device	Un-irradiated	OFF irradiated	TG irradiated	ON irradiated
L_gate = 60 nm, 4 fin	30.15%	27.31%	25.63%	4.00%
L_gate = 60 nm, 8 fin	17.32%	14.46%	11.29%	7.69%

DownLoad: CSV

Table 2. I_DSAT degradation percentage of un-irradiated devices, OFF-bias irradiated devices, TG-bias irradiated devices, and ON-bias irradiated devices in different groups after 6000 s hot carrier stress.

Device	Un-irradiated	OFF irradiated	TG irradiated	ON irradiated
L_gate = 60 nm, 4 fin	9.56%	7.39%	3.88%	1.24%
L_gate = 60 nm, 8 fin	4.5%	3.68%	3%	1.67%

DownLoad: CSV

[1]	Zhang E X, Fleetwood D M, Hachtel J A, et al. Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si. IEEE Trans Nucl Sci, 2017, 64, 226 doi: 10.1109/TNS.2016.2635023
[2]	Chatterjee I, Zhang E X, Bhuva B L, et al. Bias dependence of total-dose effects in bulk FinFETs. IEEE Trans Nucl Sci, 2013, 60, 4476 doi: 10.1109/TNS.2013.2287872
[3]	Chung E A, Nam K J, Nakanishi T, et al. Investigation of hot carrier degradation in bulk FinFET. 2017 IEEE International Reliability Physics Symposium, 2017
[4]	Chang W T, Cin L G, Yeh W K. Impact of fin width and back bias under hot carrier injection on double-gate FinFETs. IEEE Trans Device Mater Reliab, 2015, 15, 86 doi: 10.1109/TDMR.2014.2384737
[5]	Ma C Y, Li B, Wei Y Q, et al. FinFET reliability study by forward gated-diode method. 2008 9^th International Conference on Solid-State and Integrated-Circuit Technology, 2008, 644
[6]	Jiang H, Yin L X, Li Y, et al. Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs. 2015 IEEE International Reliability Physics Symposium, 2015
[7]	Yeh W K, Chen P Y, Shih C H, et al. The impact of fin number on device's performance and reliability in tri-gate FinFETs. 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017
[8]	Tang X Y, Lu J W, Zhang R, et al. Positive bias temperature instability and hot carrier injection of back gate ultra-thin-body In_0.53Ga_0.47As-on-insulator n-channel metal–oxide–semiconductor field-effect transistor. Chin Phys Lett, 2015, 32, 117302 doi: 10.1088/0256-307X/32/11/117302
[9]	Silvestri M, Gerardin S, Paccagnella A, et al. Channel hot carrier stress on irradiated 130-nm NMOSFETs: Impact of bias conditions during X-ray exposure. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007, 1
[10]	Zheng Q W, Cui J W, Zhou H, et al. Hot-carrier effects on total dose irradiated 65 nm n-type metal–oxide–semiconductor field-effect transistors. Chin Phys Lett, 2016, 33, 076102 doi: 10.1088/0256-307X/33/7/076102
[11]	Cui J W, Zheng Q W, Ning B X, et al. Hot-carrier effect on TID irradiated short-channel UTTB FD-SOI n-MOSFETs. IEEE Radiation Effects Data Workshop, 2018
[12]	Das N C, Nathan V, Dacus S, et al. Combined effects of hot-carrier stressing and ionizing radiation in SiO₂, NO, and ONO MOSFETs. IEEE Electron Device Lett, 1993, 14, 40 doi: 10.1109/55.215093
[13]	Yang L, Zhang Q Z, Huang Y B, et al. Total ionizing dose response and annealing behavior of bulk nFinFETs with ON-state bias irradiaiton. IEEE Trans Nucl Sci, 2018, 65, 1503 doi: 10.1109/TNS.2018.2827675
[14]	Chen Z, Ong P. Direct evidence for multiple vibrational excitationof Si-H/D bonds for hot-carrier degradation of MOS transistors.60th DRC Conference Digest Device Research Conference,2002
[15]	Zhang H, Jiang H, Fan X, et al. Effects of total-ionizing-dose irradiation on single-event response for flip-flop designs at 14-/16-nm bulk FinFET technology node. IEEE Trans Nucl Sci, 2018, 65, 1928 doi: 10.1109/TNS.2017.2781622
[16]	King M P, Wu X, Eller M, et al. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. IEEE Trans Nucl Sci, 2017, 64, 285 doi: 10.1109/TNS.2016.2634538

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Received: 07 March 2020 Revised: 17 June 2020 Online: Accepted Manuscript: 06 August 2020Uncorrected proof: 13 August 2020Published: 08 December 2020

Article Navigation > Journal of Semiconductors > 2020 > 41(12): 122102

Baoshun Wang, Jiangwei Cui, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi. The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET[J]. Journal of Semiconductors, 2020, 41(12): 122102. doi: 10.1088/1674-4926/41/12/122102 ****B S Wang, J W Cui, Q Guo, Q W Zheng, Y Wei, S X Xi, The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET[J]. J. Semicond., 2020, 41(12): 122102. doi: 10.1088/1674-4926/41/12/122102.

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Baoshun Wang, Jiangwei Cui, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi. The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET[J]. Journal of Semiconductors, 2020, 41(12): 122102. doi: 10.1088/1674-4926/41/12/122102 ****

B S Wang, J W Cui, Q Guo, Q W Zheng, Y Wei, S X Xi, The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET[J]. J. Semicond., 2020, 41(12): 122102. doi: 10.1088/1674-4926/41/12/122102.

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The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

DOI: 10.1088/1674-4926/41/12/122102

Baoshun Wang^1,2,
Jiangwei Cui^1,2,,
Qi Guo^1,2,
Qiwen Zheng^1,2,
Ying Wei^1,2,
Shanxue Xi^1,2

1.
Key Laboratory of Functional Materials and Devices under Special Environment, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Corresponding author: cuijw@ms.xjb.ac.cn
Received Date: 2020-03-07
Revised Date: 2020-06-17
Published Date: 2020-12-10

Abstract

Abstract

We investigate the hot carrier injection effect (HCI) and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation bias conditions in this paper. In the HCI test, the degradation of threshold voltage and saturation current decreases with the increase of fin number, which means that HCI weakens when the fin number increases. The reason is attributed to the coupling effect between fins. Moreover, irradiation is shown to weaken the degradation during the subsequent hot carrier test. The influence of irradiation on HCI is more obvious with ON bias than that of OFF bias and transmission gate bias. It is supposed that the Si–H bonds can be broken by irradiation before the HCI test, which is one reason for the irradiation influence on HCI. Besides, trapped charges are generated in the shallow trench isolation by the radiation, which could reduce the channel electric field, and then weaken the HCI.
- FinFET,
- TID,
- HCI

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References(16)

References

[1]	Zhang E X, Fleetwood D M, Hachtel J A, et al. Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si. IEEE Trans Nucl Sci, 2017, 64, 226 doi: 10.1109/TNS.2016.2635023
[2]	Chatterjee I, Zhang E X, Bhuva B L, et al. Bias dependence of total-dose effects in bulk FinFETs. IEEE Trans Nucl Sci, 2013, 60, 4476 doi: 10.1109/TNS.2013.2287872
[3]	Chung E A, Nam K J, Nakanishi T, et al. Investigation of hot carrier degradation in bulk FinFET. 2017 IEEE International Reliability Physics Symposium, 2017
[4]	Chang W T, Cin L G, Yeh W K. Impact of fin width and back bias under hot carrier injection on double-gate FinFETs. IEEE Trans Device Mater Reliab, 2015, 15, 86 doi: 10.1109/TDMR.2014.2384737
[5]	Ma C Y, Li B, Wei Y Q, et al. FinFET reliability study by forward gated-diode method. 2008 9^th International Conference on Solid-State and Integrated-Circuit Technology, 2008, 644
[6]	Jiang H, Yin L X, Li Y, et al. Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs. 2015 IEEE International Reliability Physics Symposium, 2015
[7]	Yeh W K, Chen P Y, Shih C H, et al. The impact of fin number on device's performance and reliability in tri-gate FinFETs. 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017
[8]	Tang X Y, Lu J W, Zhang R, et al. Positive bias temperature instability and hot carrier injection of back gate ultra-thin-body In_0.53Ga_0.47As-on-insulator n-channel metal–oxide–semiconductor field-effect transistor. Chin Phys Lett, 2015, 32, 117302 doi: 10.1088/0256-307X/32/11/117302
[9]	Silvestri M, Gerardin S, Paccagnella A, et al. Channel hot carrier stress on irradiated 130-nm NMOSFETs: Impact of bias conditions during X-ray exposure. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007, 1
[10]	Zheng Q W, Cui J W, Zhou H, et al. Hot-carrier effects on total dose irradiated 65 nm n-type metal–oxide–semiconductor field-effect transistors. Chin Phys Lett, 2016, 33, 076102 doi: 10.1088/0256-307X/33/7/076102
[11]	Cui J W, Zheng Q W, Ning B X, et al. Hot-carrier effect on TID irradiated short-channel UTTB FD-SOI n-MOSFETs. IEEE Radiation Effects Data Workshop, 2018
[12]	Das N C, Nathan V, Dacus S, et al. Combined effects of hot-carrier stressing and ionizing radiation in SiO₂, NO, and ONO MOSFETs. IEEE Electron Device Lett, 1993, 14, 40 doi: 10.1109/55.215093
[13]	Yang L, Zhang Q Z, Huang Y B, et al. Total ionizing dose response and annealing behavior of bulk nFinFETs with ON-state bias irradiaiton. IEEE Trans Nucl Sci, 2018, 65, 1503 doi: 10.1109/TNS.2018.2827675
[14]	Chen Z, Ong P. Direct evidence for multiple vibrational excitationof Si-H/D bonds for hot-carrier degradation of MOS transistors.60th DRC Conference Digest Device Research Conference,2002
[15]	Zhang H, Jiang H, Fan X, et al. Effects of total-ionizing-dose irradiation on single-event response for flip-flop designs at 14-/16-nm bulk FinFET technology node. IEEE Trans Nucl Sci, 2018, 65, 1928 doi: 10.1109/TNS.2017.2781622
[16]	King M P, Wu X, Eller M, et al. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. IEEE Trans Nucl Sci, 2017, 64, 285 doi: 10.1109/TNS.2016.2634538

The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

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