Fig. 1.
Effect of gas composition on etching rate and surface roughness.
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| Citation: |
Yongkang Xu, Sannian Song, Wencheng Fang, Chengxing Li, Zhitang Song. The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma[J]. Journal of Semiconductors, 2020, 41(12): 122103. doi: 10.1088/1674-4926/41/12/122103
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Y K Xu, S N Song, W C Fang, C X Li, Z T Song, The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma[J]. J. Semicond., 2020, 41(12): 122103. doi: 10.1088/1674-4926/41/12/122103.
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The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma
DOI: 10.1088/1674-4926/41/12/122103
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Abstract
Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD). -
References
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