High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films

Jianhua Zhao

doi:10.1088/1674-4926/41/8/080201

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Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201 ****J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.

Citation:

Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201 ****

J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.

Citation:

J H Zhao, High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. J. Semicond., 2020, 41(8): 080201. doi: 10.1088/1674-4926/41/8/080201.

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