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62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud

Dingyi Wu1, 2, Xiao Hu1, 2, Weizhong Li1, 2, Daigao Chen1, 2, Lei Wang1, 2, and Xi Xiao1, 2

+ Author Affiliations

 Corresponding author: Lei Wang, lwang@wri.com.cn

DOI: 10.1088/1674-4926/42/2/020502

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[1]
Soref R A. Silicon-based optoelectronics. Proc IEEE, 1993, 81, 1687 doi: 10.1109/5.248958
[2]
Miller D A B. Device requirements for optical interconnects to silicon chips. Proc IEEE, 2009, 97, 1166 doi: 10.1109/JPROC.2009.2014298
[3]
Asghari M, Krishnamoorthy A V. Energy-efficient communication. Nat Photonics, 2011, 5, 268 doi: 10.1038/nphoton.2011.68
[4]
Thomson D, Zilkie A, Bowers J E, et al. Roadmap on silicon photonics. J Opt, 2016, 18, 073003 doi: 10.1088/2040-8978/18/7/073003
[5]
Yamada K, Tsuchizawa T, Nishi H, et al. High-performance silicon photonics technology for telecommunications applications. Sci Technol Adv Mater, 2014, 15, 024603 doi: 10.1088/1468-6996/15/2/024603
[6]
Gould M, Baehr-Jones T, Ding R, et al. Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking. Opt Express, 2012, 20, 7101 doi: 10.1364/OE.20.007101
[7]
Novack A, Gould M, Yang Y, et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. Opt Express, 2013, 21, 28387 doi: 10.1364/OE.21.028387
[8]
Chen G, Yu Y, Deng S, et al. Bandwidth improvement for germanium photodetector using wire bonding technology. Opt Express, 2015, 23, 25700 doi: 10.1364/OE.23.025700
[9]
Fard M M, Cowan G, Liboiron-Ladouceur O. Responsivity optimization of a high-speed germanium-on-silicon photodetector. Opt Express, 2016, 24, 27738 doi: 10.1364/OE.24.027738
Fig. 1.  (Color online) (a) Cross-sectional view of designed peaking Ge-on-Si PD. (b) I–V characteristics of designed peaking Ge-on-Si PD in dark illuminated state. (c) The simulated normalized S21 response of vertical Ge-on-Si PD with small peaking, large peaking and without peaking. (d) The experimental and fitted result of normalized RF response of vertical Ge-on-Si PD with small inductance, the inset is the optical micrograph of peaking PD. (e–f) The experimental and fitted magnitude/phase part of the small signal S11 reflection parameters from 100 MHz to 60 GHz at –3 V bias voltage, the blue and red line represent experimental and fitted result, respectively.

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Fig. 2.  (Color online) (a) Measured 70, 80, 90, and 100 Gbit/s NRZ eye diagrams under 3 V reverse-bias voltage. (b) Measured 40, 50, 60, and 64 Gbaud PAM-4 eye diagrams under 3 V reverse-bias voltage.

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[1]
Soref R A. Silicon-based optoelectronics. Proc IEEE, 1993, 81, 1687 doi: 10.1109/5.248958
[2]
Miller D A B. Device requirements for optical interconnects to silicon chips. Proc IEEE, 2009, 97, 1166 doi: 10.1109/JPROC.2009.2014298
[3]
Asghari M, Krishnamoorthy A V. Energy-efficient communication. Nat Photonics, 2011, 5, 268 doi: 10.1038/nphoton.2011.68
[4]
Thomson D, Zilkie A, Bowers J E, et al. Roadmap on silicon photonics. J Opt, 2016, 18, 073003 doi: 10.1088/2040-8978/18/7/073003
[5]
Yamada K, Tsuchizawa T, Nishi H, et al. High-performance silicon photonics technology for telecommunications applications. Sci Technol Adv Mater, 2014, 15, 024603 doi: 10.1088/1468-6996/15/2/024603
[6]
Gould M, Baehr-Jones T, Ding R, et al. Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking. Opt Express, 2012, 20, 7101 doi: 10.1364/OE.20.007101
[7]
Novack A, Gould M, Yang Y, et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. Opt Express, 2013, 21, 28387 doi: 10.1364/OE.21.028387
[8]
Chen G, Yu Y, Deng S, et al. Bandwidth improvement for germanium photodetector using wire bonding technology. Opt Express, 2015, 23, 25700 doi: 10.1364/OE.23.025700
[9]
Fard M M, Cowan G, Liboiron-Ladouceur O. Responsivity optimization of a high-speed germanium-on-silicon photodetector. Opt Express, 2016, 24, 27738 doi: 10.1364/OE.24.027738

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    Received: 05 January 2021 Revised: 14 January 2021 Online: Uncorrected proof: 19 January 2021Accepted Manuscript: 19 January 2021Published: 08 February 2021

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      Article Navigation >  Journal of Semiconductors  > 2021  >  42(2): 020502
      Dingyi Wu, Xiao Hu, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud[J]. Journal of Semiconductors, 2021, 42(2): 020502. doi: 10.1088/1674-4926/42/2/020502 ****D Y Wu, X Hu, W Z Li, D G Chen, L Wang, X Xiao, 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud[J]. J. Semicond., 2021, 42(2): 020502. doi: 10.1088/1674-4926/42/2/020502.
      Citation:
      Dingyi Wu, Xiao Hu, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud[J]. Journal of Semiconductors, 2021, 42(2): 020502. doi: 10.1088/1674-4926/42/2/020502 ****
      D Y Wu, X Hu, W Z Li, D G Chen, L Wang, X Xiao, 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud[J]. J. Semicond., 2021, 42(2): 020502. doi: 10.1088/1674-4926/42/2/020502.
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      62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud

      DOI: 10.1088/1674-4926/42/2/020502
      • 1.

        Wuhan Research Institute of Posts and Telecommunications (WRI), Wuhan 430074, China

      • 2.

        National Information Optoelectronics Innovation Center, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China

      More Information
      • Dingyi Wu：got his B.S. degree from Hubei University in 2017. Now he is a postgraduate student at Wuhan Research Institute of Posts and Telecommunications under the supervision of Prof. Xi Xiao. Since June 2019, he has been working in National Information Optoelectronics Innovation Center as a visiting student. His current re-search focuses on high-speed germanium-silicon photodetector
      • Xiao Hu：received the Ph.D. degree in Optical Engineering from the Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China, in 2017. He is currently a Senior Engineer with National Information Optoelectronics Innovation Center, China Information and Communication Technologies Group Corporation (CICT), Wuhan, China. His research efforts to innovations in photonic integrated devices and frontiers of high-speed/high-power germanium-silicon photodetectors, silicon hybrid integration modulators
      • Lei Wang：is a manager of silicon photonics R&D department in National Optoelectronics Innovation Center, leading a team and running a platform of silicon photonics research, test and product development. He has engaged in silicon photonics products development projects used in 5G, telecom and datacom. Prior to joining NOEIC, he is the vice director of silicon photonics group of State Key Laboratory of Optical Communication Technologies and Networks of CICT. He received a Ph.D. in Optoelectronic Information Engineering from Huazhong University of Science and Technology in 2012 and studied as a joint student in ECE department in University of Texas at Austin in 2010
      • Xi Xiao：received the B.S. and M.S. degrees from the Huazhong University of Science and Technology, Wuhan, China, in 2005 and 2007, respectively, and the Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences (ISCAS), Beijing, China, in 2010. He was an Assistant Professor and an Associate Professor with the Institute of Semiconductors, Chinese Academy of Sciences, from 2010 to 2013. He is currently the Director of the Silicon Photonics Lab, Fiber Home Technologies, Wuhan, the Vice Director of the State Key Laboratory of Optical Communication Technologies and Networks of China, and the CEO of the National Information Optoelectronics Innovation Center of China. His current research interests include the high-speed silicon-based PICs and EPICs for optical communication and optical interconnects, as well as their enabling fabrication and integration technologies
      • Corresponding author: lwang@wri.com.cn
      • Received Date: 2021-01-05
      • Revised Date: 2021-01-14
      • Published Date: 2021-02-10

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