J. Semicond. > 2021, Volume 42 > Issue 4 > 040101

EDITORIAL

Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits

Wei Wang1, , Lingjuan Zhao1, , Dan Lu1, , Jianping Yao2, , Weiping Huang3, , Yong Liu4, and Brent Little5,

+ Author Affiliations

 Corresponding author: Wei Wang, wwang@semi.ac.cn; Lingjuan Zhao, ljzhao@semi.ac.cn; Dan Lu, ludan@semi.ac.cn; Jianping Yao, jpyao@uottawa.ca; Weiping Huang, wphuang_canada@hotmail.com; Yong Liu, yongliu@uestc.edu.cn; Brent Little, brent.little@qxptech.com

DOI: 10.1088/1674-4926/42/4/040101

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Halide perovskites show excellent photovoltaic properties[14]. However, the preparation of high-quality perovskite crystals remains a great challenge, which limits their applications. Perovskite materials applied to photodetectors mainly include polycrystalline thin films and single crystals. Traditional solution methods are used to prepare polycrystalline thin films, and the films are full of defects such as voids and grain boundaries[57]. Compared to polycrystalline thin films, perovskite single crystals possess high crystallinity and low defect density[810]. Photodetectors based on perovskite single crystals exhibit excellent performance[11]. However, the size limitation of single crystals hinders their application in photodetectors[12].

There are several reports on perovskite quasi-single crystal wafers for photodetectors, which show low defect density and good performance[1316]. The soft lattice of perovskite allows perovskite powder to be sufficiently deformed and densified under low pressure[17, 18]. Shrestha et al. used a mechanical pressing process to make polycrystalline MAPbI3 wafer with millimeter thickness and high crystallinity (Fig. 1(a))[13]. They made MAPbI3 wafers by applying a pressure of 0.3 GPa for 5 min to the microcrystals precipitated from solution. The wafer was then pressed onto PEDOT substrate under a pressure of 15 MPa for 2 min, thus obtaining an X-ray detector (Fig. 1(b)). The device exhibited a sensitivity of 2527 μC/(Gyair∙cm2) under 70 kVp X-ray exposure (Fig. 1(c)).

Fig. 1.  (Color online) (a) The sintered MAPbI3 wafer. (b) The X-ray detector with MAPbI3 wafer. (c) Extracted charge at E = 0.2 V∙μm−1 for MAPbI3-wafer-based device and CdTe reference detector. All exposures are 2-s-long pulses from an X-ray source operated at 70 kV. Reproduced with permission[13], Copyright 2017, Nature Publishing Group. (d) Densification of perovskites in graphite die. (e) UV-vis absorption and steady-state PL spectra for FAST-MAPbI3 and MAPbI3 powder. (f) IV curve for the holy-only device under dark. Reproduced with permission[16], Copyright 2016, Nature Publishing Group.

In addition to applying a stress field to the microcrystals/powder from perovskite precursor, a secondary coupling effect can be triggered. The direct densification of perovskite from powder to high-quality bulk crystals can be achieved in minutes under the dual action of a stress field and a thermal/electric field. Hu et al. prepared large MAPbI3 wafers (diameter ~80 mm) from perovskite powder by heat-assisted pressing method[19]. The X-ray detector with MAPbI3 wafers has an X-ray sensitivity of 1.22 × 105 μC/(Gyair∙cm2) at 10 V bias. Zheng et al. first reported an electric and mechanical field-assisted sintering technique (EM-FAST) for making perovskite wafers, which can produce high-quality bulk crystals in 5 min (Fig. 1(d))[16]. The pressure leads to better contact between the particles, thus forming a sintered neck. The small contact area at the sintered neck leads to an increase in local pressure, which triggers grain boundary diffusion and sliding. Moreover, localized thermal concentration is induced at the neck under the application of electric field, and this surface heating triggers mass transfer and grain integration. A very dense bulk crystal was obtained by using the FAST method. The optical bandgap of FAST product (1.45 eV) is close to that of the single crystal (1.51 eV) (Fig. 1(e)). The defect density of FAST product reaches 5.4 × 1010 cm−3, which is close to that of the single crystal (Fig. 1(f)).

The same passivation strategies applied in solution engineering can also be applied to mechanical pressing methods. Yang et al. introduced a bismuth oxybromide (BiOBr) heteroepitaxial passivation layer in Cs2AgBiBr6 polycrystalline wafers (Figs. 2(a) and 2(b))[14]. BiOBr initiated the epitaxial growth of Cs2AgBiBr6 grain boundaries, resulting in a grain size of 100 μm while passivating the grain boundary defects and eliminating the ion migration. The detector showed improved stability with a sensitivity of 250 μC/(Gyair∙cm2) (Fig. 2(c)).

Fig. 2.  (Color online) (a) Ion migration. (b) Suppressed ion migration by BiOBr passivation. (c) X-ray sensitivity under different electric fields. Reproduced with permission[14], Copyright 2019, Nature Publishing Group. (d) Photoresponse spectrum for the photodetector at 5 V. (e) Response time of the photodetector at 5 V. (f) Photocurrent of the photodetector as a function of time measured during periodical switching of 800 nm light illumination at 5 V. Reproduced with permission[20], Copyright 2023, Royal Society of Chemistry.

Witt et al. investigated the factors such as pressure, pressing time and temperature during the pressing process[15]. Above 35 °C, rapid compression occurred, mainly due to two relaxation processes caused by plastic deformation and particle rearrangement. The optimal pressing conditions (100 MPa, 100 °C, 130 min) yield MAPbI3 wafers with relative density >97%, high crystallinity, and an average size of 1.9 μm. Besides X-ray detectors, perovskite wafers can also be used in near-infrared detectors. Yu et al. made dense and smooth MAPbI3 wafers from MAPbI3 single crystals by hot pressing method[20]. The near-infrared detector exhibited a responsivity of 2.1 A∙W−1 (Fig. 2(d)), rise and decay time of ~239 μs and ~6.13 ms (Fig. 2(e)), and high cycling stability (Fig. 2(f)).

Most photodetectors are made from polycrystalline films or single crystals of perovskite[2123]. All efforts focus on defect passivation[24, 25], interface modification[26, 27] and film formation control[28] of polycrystalline thin films as well as crystallization engineering of single crystals. Mechanical pressing method is an easy and fast process for preparing perovskite bulk crystals. It is also necessary to achieve high adhesion between perovskite wafers and the underlying substrate. We should explore the adaptability of perovskite materials with other materials (metals[29], carbon[30], 2D materials[31], etc.) to improve device performance.

Acknowledgements: This work was supported by the National Natural Science Foundation of China (62004058 and U21A2076), Natural Science Foundation of Hebei Province (F2020202022), State Key Laboratory of Reliability and Intelligence of Electrical Equipment (EERI_PI20200005), S&T Program of Hebei (215676146H and 225676163GH), and Hebei Graduate Innovation Funding Project (CXZZBS2023037 and CXZZSS2023026). L. Ding thanks the National Key Research and Development Program of China (2022YFB3803300), the open research fund of Songshan Lake Materials Laboratory (2021SLABFK02), and the National Natural Science Foundation of China (21961160720).


1. Kumar, H., Sinha, A., Yang, C. High-Performance Si1−xSnx/Si Avalanche Photodiode on Si Platform at Room Temperature. Journal of Electronic Materials, 2025. doi:10.1007/s11664-025-11885-9
2. Li, X., Qu, H., Liu, X. et al. Low dark current and low voltage germanium avalanche photodetector for a silicon photonic link. Photonics Research, 2024, 12(12): 2931-2937. doi:10.1364/PRJ.534507
3. Yi, L., Liu, D., Li, D. et al. Waveguide-Integrated Ge/Si Avalanche Photodiode with Vertical Multiplication Region for 1310 nm Detection. Photonics, 2023, 10(7): 750. doi:10.3390/photonics10070750
4. Xiang, Y., Cao, H., Liu, C. et al. High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz. Optica, 2022, 9(7): 762-769. doi:10.1364/OPTICA.462609
5. Xiang, Y., Cao, H., Liu, C. et al. High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure. Optics Express, 2022, 30(7): 11288-11297. doi:10.1364/OE.450618
6. Xiang, Y., Cao, H., Liu, C. et al. High-performance waveguide Ge/Si avalanche photodiode with simplified fabrication processes. 2021.
7. Yan, H., Xie, Y., Zhang, L. et al. Wideband-tunable integrated microwave photonic filter based on an ultra-high-Q resonator. 2021.
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    Received: 25 March 2021 Revised: Online: Accepted Manuscript: 27 March 2021Uncorrected proof: 29 March 2021Published: 12 April 2021

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      Wei Wang, Lingjuan Zhao, Dan Lu, Jianping Yao, Weiping Huang, Yong Liu, Brent Little. Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits[J]. Journal of Semiconductors, 2021, 42(4): 040101. doi: 10.1088/1674-4926/42/4/040101 ****W Wang, L J Zhao, D Lu, J P Yao, W P Huang, Y Liu, B Little, Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits[J]. J. Semicond., 2021, 42(4): 040101. doi: 10.1088/1674-4926/42/4/040101.
      Citation:
      Wei Wang, Lingjuan Zhao, Dan Lu, Jianping Yao, Weiping Huang, Yong Liu, Brent Little. Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits[J]. Journal of Semiconductors, 2021, 42(4): 040101. doi: 10.1088/1674-4926/42/4/040101 ****
      W Wang, L J Zhao, D Lu, J P Yao, W P Huang, Y Liu, B Little, Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits[J]. J. Semicond., 2021, 42(4): 040101. doi: 10.1088/1674-4926/42/4/040101.

      Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits

      DOI: 10.1088/1674-4926/42/4/040101
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      • Wei Wang:is a professor of Institute of Semiconductors, Chinese Academy of Sciences. He graduated from the Department of Physics, Beijing University in 1960. His research interests include DFB lasers, VCSEL, electro-absorption modulated lasers and other InP based Photonic Integrated Circuits. Professor Wang is an elected Academician of the Chinese Academy of Sciences
      • Lingjuan Zhao:received the B. Sc. and M. Sc. degrees in Semiconductor Physics from Tianjin University in 1985 and 1988. She is currently a Professor of Institute of Semiconductors, Chinese Academy of Sciences. Her research interests focus on high speed semiconductor lasers and photonic integrated circuits
      • Dan Lu:received his Ph.D. degree from the Beijing University of Posts and Telecommunications. He is currently a professor at the Institute of Semiconductors, CAS. His research interests include the development and application of semiconductor lasers, photonic integrated circuits, and microwave photonics. Dr. Lu is a member of the IEEE Photonics Society, and the SPIE Society
      • Jianping Yao:is a Distinguished University Professor and University Research Chair in the School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, Ontario, Canada. He is Editor-in-Chief of IEEE Photonics Technology Letters, an Advisory Editorial Board Member of Optics Communications, and a Steering Committee Member of IEEE/OSA Journal of Lightwave Technology. Dr. Yao is a Fellow of IEEE (2012), the Optical Society of America (OSA) (2010), the Canadian Academy of Engineering (CAE) (2012), and the Academy of Science of the Royal Society of Canada (RSC) (2018). His research interests focus on microwave photonics, fiber optics and biophotonics
      • Weiping Huang:received his Ph.D. in 1989 from MIT in electrical engineering. He was a professor of University of Waterloo and then McMaster University, Canada. He also worked at Nortel (Canada) and NTT (Japan) and consulted with several companies in North America and Asia. He founded Apollo Photonics Inc. to develop software design tools for photonic integrated circuits in 1995. He co-founded Hisense Broadband Multimedia Technologies Inc. in 2003, and the company is now a leading supplier of optical transceivers ranking No. 3 globally in 2020. He is Chairman of Qingdao Hisense Broadband Multimedia Technology Co. He also is the dean, School of Information Science and Engineering, Shandong University. He is internationally known for his contributions and expertise for photonic devices and integrated circuits
      • Yong Liu:is a Professor at the University of Electronic Science & Technology of China (UESTC). He received his Ph.D. degree from Eindhoven University of Technology in 2004, and stayed at the same university as a researcher. Since 2007, he became a professor at UESTC. He received Chinese National Science Fund for Distinguished Young Scholars in 2009 and Chinese Chang Jiang Scholar in 2013. His research interests are mainly focused on high-speed optoelectronic devices and optical fiber technologies
      • Brent Little:received his Ph.D. in Electrical Engineering and Advanced Mathematics from the University of Waterloo, Canada in 1994. He has held research potions at MIT, University of Maryland, Infinera, and Fujitsu. In 2000 he was the founder and CTO Little Optics Inc. Currently he is a visiting professor at the Xian Institute of Optics and Precision Mechanics of CAS in Xian, China, as well as the co-founder and CTO of QXP Technologies Inc. He has been a pioneer in photonics and optical telecommunications, having co-authored more than 400 journal publications, and holding more than 50 patents
      • Corresponding author: wwang@semi.ac.cnljzhao@semi.ac.cnludan@semi.ac.cnjpyao@uottawa.cawphuang_canada@hotmail.comyongliu@uestc.edu.cnbrent.little@qxptech.com
      • Received Date: 2021-03-25
      • Published Date: 2021-04-10

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