Fig. 1.
(Color online) Surface topography of the AlN crystal grown at a seed surface temperature of 2200 °C. (a) Photograph. (b) Differential interference microscope. (c) SEM image.
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| Citation: |
Li Zhang, Haitao Qi, Hongjuan Cheng, Yuezeng Shi, Zhanpin Lai, Muchang Luo. Morphology and crystalline property of an AlN single crystal grown on AlN seed[J]. Journal of Semiconductors, 2021, 42(5): 052101. doi: 10.1088/1674-4926/42/5/052101
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L Zhang, H T Qi, H J Cheng, Y Z Shi, Z P Lai, M C Luo, Morphology and crystalline property of an AlN single crystal grown on AlN seed[J]. J. Semicond., 2021, 42(5): 052101. doi: 10.1088/1674-4926/42/5/052101.
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Morphology and crystalline property of an AlN single crystal grown on AlN seed
DOI: 10.1088/1674-4926/42/5/052101
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Abstract
AlN single crystal grown by physical vapor transport (PVT) using homogeneous seed is considered as the most promising approach to obtain high-quality AlN boule. In this work, the morphology of AlN single crystals grown under different modes (3D islands and single spiral center) were investigated. It is proved that, within an optimized thermal distribution chamber system, the surface temperature of AlN seed plays an important role in crystal growth, revealing a direct relationship between growth mode and growth condition. Notably, a high-quality AlN crystal, with (002) and (102) reflection peaks of 65 and 36 arcsec at full width at half maximum (FWHM), was obtained grown under a single spiral center mode. And on which, a high-quality AlxGa1–xN epitaxial layer with high Al content (x = 0.54) was also obtained. The FWHMs of (002) and (102) reflection of AlxGa1–xN were 202 and 496 arcsec, respectively, which shows superiority over their counterpart grown on SiC or a sapphire substrate.-
Keywords:
- AlN crystal,
- surface morphology,
- growth mechanism,
- crystalline quality
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References
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