Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method

Jianbai Xia

doi:10.1088/1674-4926/42/6/060402

J. Semicond. > 2021, Volume 42 > Issue 6 > 060402, doi: 10.1088/1674-4926/42/6/060402

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Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method

Jianbai Xia

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Corresponding author: Jianbai Xia, xiajb@semi.ac.cn

References

[1]	Tsao J Y, Han J, Haitz R H, et al. The blue LED Nobel Prize: Historical context, current scientific understanding, human benefit. Ann Phys, 2015, 527, A53 doi: 10.1002/andp.201570058
[2]	Tsao J Y, Chowdhury S, Hollis M A, et al. Ultrawide-bandgap semiconductors: Research opportunities and challenges. Adv Electron Mater, 2018, 4, 1600501 doi: 10.1002/aelm.201600501
[3]	Taniyasu Y, Kasu M, Makimoto T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature, 2006, 441, 325 doi: 10.1038/nature04760
[4]	Simon J, Protasenko V, Lian C, et al. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science, 2010, 327, 60 doi: 10.1126/science.1183226
[5]	Li D B, Jiang K, Sun X J, et al. AlGaN photonics: Recent advances in materials and ultraviolet devices. Adv Opt Photonics, 2018, 10, 43 doi: 10.1364/AOP.10.000043
[6]	Zhang S B, Wei S H, Zunger A. Overcoming doping bottlenecks in semiconductors and wide-gap materials. Physica B, 1999, 273/274, 976 doi: 10.1016/S0921-4526(99)00605-5
[7]	Wei S H. Overcoming the doping bottleneck in semiconductors. Comput Mater Sci, 2004, 30, 337 doi: 10.1016/j.commatsci.2004.02.024
[8]	Lyons J L. A survey of acceptor dopants for β-Ga₂O₃. Semicond Sci Technol, 2018, 33, 05LT02 doi: 10.1088/1361-6641/aaba98
[9]	Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga₂O₃. Appl Phys Lett, 2018, 112, 032108 doi: 10.1063/1.5009423
[10]	Wong M H, Lin C H, Kuramata A, et al. Acceptor doping of β-Ga₂O₃ by Mg and N ion implantations. Appl Phys Lett, 2018, 113, 102103 doi: 10.1063/1.5050040
[11]	Nakarmi M L, Kim K H, Li J, et al. Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping. Appl Phys Lett, 2003, 82, 3041 doi: 10.1063/1.1559444
[12]	Nishimatsu T, Katayama-Yoshida H, Orita N. Ab initio study of donor–hydrogen complexes for low-resistivity n-type diamond semiconductor. Jpn J Appl Phys, 2002, 41, 1952 doi: 10.1143/JJAP.41.1952
[13]	Yan Y, Li J, Wei S H, et al. Possible approach to overcome the doping asymmetry in wideband gap semiconductors. Phys Rev Lett, 2007, 98, 135506 doi: 10.1103/PhysRevLett.98.135506
[14]	Persson C, Platzer-Björkman C, Malmström J, et al. Strong valence-band offset bowing of ZnO_1–_xS_x enhances p-type nitrogen doping of ZnO-like alloys. Phys Rev Lett, 2006, 97, 146403 doi: 10.1103/PhysRevLett.97.146403
[15]	Jiang K, Sun X J, Shi Z M, et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light: Sci Appl, 2021, 10, 1 doi: 10.1038/s41377-020-00435-z

Fig. 1. (Color online) Non-equilibrium doping method to lower the acceptor E_a in UWBG nitride semiconductors and its application in DUV-LED. Acceptors are randomly doped in (a) AlN and (c) GaN. Both have high E_a in this condition. (b) GaN-QDs are embedded in AlN host and acceptors are doped in AlN host and concentrate near the interface. (d) Current–voltage curves of the devices. Device A uses the non-equilibrium doping method and Device B uses the uniform doping method. The insets are the device structure diagram and the cross-sectional scanning transmission electronic microscopy for the active region of the devices. Cited from Ref. [15].

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[1]	Tsao J Y, Han J, Haitz R H, et al. The blue LED Nobel Prize: Historical context, current scientific understanding, human benefit. Ann Phys, 2015, 527, A53 doi: 10.1002/andp.201570058
[2]	Tsao J Y, Chowdhury S, Hollis M A, et al. Ultrawide-bandgap semiconductors: Research opportunities and challenges. Adv Electron Mater, 2018, 4, 1600501 doi: 10.1002/aelm.201600501
[3]	Taniyasu Y, Kasu M, Makimoto T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature, 2006, 441, 325 doi: 10.1038/nature04760
[4]	Simon J, Protasenko V, Lian C, et al. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science, 2010, 327, 60 doi: 10.1126/science.1183226
[5]	Li D B, Jiang K, Sun X J, et al. AlGaN photonics: Recent advances in materials and ultraviolet devices. Adv Opt Photonics, 2018, 10, 43 doi: 10.1364/AOP.10.000043
[6]	Zhang S B, Wei S H, Zunger A. Overcoming doping bottlenecks in semiconductors and wide-gap materials. Physica B, 1999, 273/274, 976 doi: 10.1016/S0921-4526(99)00605-5
[7]	Wei S H. Overcoming the doping bottleneck in semiconductors. Comput Mater Sci, 2004, 30, 337 doi: 10.1016/j.commatsci.2004.02.024
[8]	Lyons J L. A survey of acceptor dopants for β-Ga₂O₃. Semicond Sci Technol, 2018, 33, 05LT02 doi: 10.1088/1361-6641/aaba98
[9]	Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga₂O₃. Appl Phys Lett, 2018, 112, 032108 doi: 10.1063/1.5009423
[10]	Wong M H, Lin C H, Kuramata A, et al. Acceptor doping of β-Ga₂O₃ by Mg and N ion implantations. Appl Phys Lett, 2018, 113, 102103 doi: 10.1063/1.5050040
[11]	Nakarmi M L, Kim K H, Li J, et al. Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping. Appl Phys Lett, 2003, 82, 3041 doi: 10.1063/1.1559444
[12]	Nishimatsu T, Katayama-Yoshida H, Orita N. Ab initio study of donor–hydrogen complexes for low-resistivity n-type diamond semiconductor. Jpn J Appl Phys, 2002, 41, 1952 doi: 10.1143/JJAP.41.1952
[13]	Yan Y, Li J, Wei S H, et al. Possible approach to overcome the doping asymmetry in wideband gap semiconductors. Phys Rev Lett, 2007, 98, 135506 doi: 10.1103/PhysRevLett.98.135506
[14]	Persson C, Platzer-Björkman C, Malmström J, et al. Strong valence-band offset bowing of ZnO_1–_xS_x enhances p-type nitrogen doping of ZnO-like alloys. Phys Rev Lett, 2006, 97, 146403 doi: 10.1103/PhysRevLett.97.146403
[15]	Jiang K, Sun X J, Shi Z M, et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light: Sci Appl, 2021, 10, 1 doi: 10.1038/s41377-020-00435-z