A review of manufacturing technologies for silicon carbide superjunction devices

Run Tian; Chao Ma; Jingmin Wu; Zhiyu Guo; Xiang Yang; Zhongchao Fan

doi:10.1088/1674-4926/42/6/061801

J. Semicond. > 2021, Volume 42 > Issue 6 > 061801, doi: 10.1088/1674-4926/42/6/061801

REVIEWS

A review of manufacturing technologies for silicon carbide superjunction devices

Run Tian^{1, 2}, Chao Ma^3,, Jingmin Wu^{1, 2}, Zhiyu Guo^{1, 2}, Xiang Yang¹ and Zhongchao Fan^{1, 4,}

+ Author Affiliations

1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3. University of Electronic Science and Technology of China, Chengdu 610054, China
4. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Author Bio:

received her B.S. degree from the Northwest University, Shaanxi, China, in 2018. She is currently working toward the M.S. degree in microelectronics and solid-state electronics at the Institute of Semiconductors, Chinese Academy of Sciences (CAS), and in the University of Chinese Academy of Sciences. Her research interests include SiC materials, SiC power devices and semiconductor manufacturing processes.

received the M.S. degree in integrated circuit engineering from University of Chinese Academy of Sciences, Beijing, China. He works in the Institute of Microelectronics, Chinese Academy of Sciences (CAS). His research interests include integrated circuit design, integrated circuit technology innovation and industrial development planning.

is a professor of the Institute of Semiconductors, Chinese Academy of Science (CAS). He received his Ph.D. degree from the Institute of Semiconductors, CAS in 2004. His current research interests include wide bandgap power devices, optoelectronic devices and integration technology.

Corresponding author: Chao Ma, machao@ime.ac.cn; Zhongchao Fan, zcfan@semi.ac.cn

Abstract: Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off. It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices. Numerous efforts have been conducted to employ the same concept in silicon carbide devices. These works are summarized here.

Key words: silicon carbide (SiC), power semiconductor devices, superjunction (SJ), process development

References

[1]	Baliga B J. Trends in power semiconductor devices. IEEE Trans Electron Devices, 1996, 43(10), 1717 doi: 10.1109/16.536818
[2]	Huang A Q. Power semiconductor devices for smart grid and renewable energy systems. J Proc IEEE, 2017, 105(11), 2019 doi: 10.1109/JPROC.2017.2687701
[3]	Baliga B J. Fundamentals of power semiconductor devices. New York: Springer Verlag, 2008
[4]	Kimoto T, Cooper J A. Fundamentals of silicon carbide technology. Singapore: Wiley, 2014
[5]	Tsuchida H, Kamata I, Jikimoto T, et al. Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor. J Cryst Growth, 2002, 237–239, 1206 doi: 10.1557/PROC-640-H2.12
[6]	Onishi Y, Iwamoto S, Sato T, et al. 24 mΩ·cm² 680 V silicon superjunction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2002, 241
[7]	Saito W, Omura I, Aida S, et al. A 20 mΩ·cm² 600 V-class Superjunction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2004, 459
[8]	Rub M, Bar M, Deboy G, et al. 550 V superjunction 3.9 Ω·mm² transistor formed by 25 MeV masked boron implantation. International Symposium on Power Semiconductor Devices and ICs, 2004, 455
[9]	Yamauchi S, Urakami Y, Tuji N, et al. Defect-less trench filling of epitaxial Si growth by H₂ annealing. International Symposium on Power Semiconductor Devices and ICs, 2002, 133
[10]	Iwamoto S, Takahashi K, Kuribayashi H, et al. Above 500 V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth. International Symposium on Power Semiconductor Devices and ICs, 2005, 31
[11]	Sakakibara J, Noda Y, Shibata T, et al. 600 V-class super junction MOSFET with high aspect ratio P/N columns structure. International Symposium on Power Semiconductor Devices and ICs, 2008, 299
[12]	Udrea F, Deboy G, Fujihira T. Superjunction power devices, history, development, and future prospects. IEEE Trans Electron Devices, 2017, 64(3), 713 doi: 10.1109/TED.2017.2658344
[13]	Kobayashi Y, Kyogoku S, Morimoto T, et al. High-temperature performance of 1.2 kV-class SiC super junction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2019, 31
[14]	Kosugi R, Sakuma Y, Kojima K, et al. First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method. International Symposium on Power Semiconductor Devices and ICs, 2014, 346
[15]	Rueb M. Addressing production of SiC super-junction MOSFETs. J Compd Semicond, 2019, 25(3), 38
[16]	Ishibashi N, Fukada K, Bandoh A, et al. High-quality 100/150 mm p-type 4H-SiC epitaxial wafer for high-voltage bipolar devices. Mater Sci Forum, 2017, 897, 55 doi: 10.4028/www.scientific.net/MSF.897.55
[17]	Ding R X, Yang Y T, Han R. Microtrenching effect of SiC ICP etching in SF₆/O₂ plasma. J Semicond, 2009, 30(1), 016001 doi: 10.1088/1674-4926/30/1/016001
[18]	Han C, Zhang Y, Song Q, et al. An improved ICP etching for mesa-terminated 4H-SiC P –i –N diodes. IEEE Trans Electron Devices, 2015, 62(4), 1223 doi: 10.1109/TED.2015.2403615
[19]	Beheim G M, Evans L J. Control of trenching and surface roughness in deep reactive ion etched 4H and 6H SiC. MRS Proc, 2006, 911, 0911 doi: 10.1557/PROC-0911-B10-15
[20]	Kimoto T, Yamamoto T, Chen Z Y, et al. 4H-SiC (11-20) epitaxial growth. Mater Sci Forum, 2000, 338–342, 189 doi: 10.4028/www.scientific.net/MSF.338-342.189
[21]	Takeuchi Y, Kataoka M, Kimoto T, et al. SiC migration enhanced embedded epitaxial (ME3) growth technology. Mater Sci Forum, 2006, 527–529, 251 doi: 10.4028/www.scientific.net/MSF.527-529.251
[22]	Kimoto T, Matsunami H. Surface diffusion lengths of adatoms on 6H-SiC{0001} faces in chemical vapor deposition of SiC. J Appl Phys, 1995, 78(5), 3132 doi: 10.1063/1.359999
[23]	Ji S, Kojima K, Kosugi R, et al. Influence of growth pressure on filling 4H-SiC trenches by CVD method. Jpn J Appl Phys, 2016, 55(1S), 01AC04 doi: 10.7567/JJAP.55.01AC04
[24]	Ji S, Kojima K, Kosugi R, et al. Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process. Appl Phys Express, 2015, 8(6), 065502 doi: 10.7567/APEX.8.065502
[25]	Kosugi R, Ji S, Mochizuki K, et al. Strong impact of slight trench direction misalignment from [11-20] on deep trench filling epitaxy for SiC super-junction devices. Jpn J Appl Phys, 2017, 56(4S), 04CR05 doi: 10.7567/JJAP.56.04CR05
[26]	Kosugi R, Sakuma Y, Kojima K, et al. Development of SiC super-junction (SJ) device by deep trench-filling epitaxial growth. Mater Sci Forum, 2013, 740–742, 785 doi: 10.4028/www.scientific.net/MSF.740-742.785
[27]	Kojima K, Nagata A, Ito S, et al. Filling of deep trench by epitaxial SiC growth. Mater Sci Forum, 2013, 742, 793 doi: 10.4028/www.scientific.net/MSF.740-742.793
[28]	Zhong X, Wang B, Sheng K. Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode. International Symposium on Power Semiconductor Devices and ICs, 2016, 231

Fig. 1. (a) A typical P–i–N structure. (b) Electric field distribution.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (a) SJ structure. (b) Electric field distribution in y- and x-directions.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Process flow diagram of MEG.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) The schematic diagram of energy-filter technology^[15].

DownLoad: Full-Size Img PowerPoint

Fig. 5. Process flow diagram of TFE.

DownLoad: Full-Size Img PowerPoint

Fig. 6. A schematic diagram of trenches parallel to $ \left[11\bar{2}0\right] $.

DownLoad: Full-Size Img PowerPoint

Fig. 7. The schematic diagram of the trench mask pattern.

DownLoad: Full-Size Img PowerPoint

Fig. 8. The schematic diagrams of the cross section of the samples after trench filling.

DownLoad: Full-Size Img PowerPoint

Fig. 9. Process flow of the trench and implantation technique.

DownLoad: Full-Size Img PowerPoint

Fig. 10. (Color online) The schematic diagram of the trenches with inclined sidewall.

DownLoad: Full-Size Img PowerPoint

Table 1. The calculation results of SRIM software.

Depth (μm)		1	3	5	10	20	50
Ion implantation energy (MeV)	N-doping	1.1	5.4	9.6	19.4	35.5	72.5
Ion implantation energy (MeV)	Al-doping	1.3	7.5	16.3	38.5	75.0	165.0

DownLoad: CSV

[1]	Baliga B J. Trends in power semiconductor devices. IEEE Trans Electron Devices, 1996, 43(10), 1717 doi: 10.1109/16.536818
[2]	Huang A Q. Power semiconductor devices for smart grid and renewable energy systems. J Proc IEEE, 2017, 105(11), 2019 doi: 10.1109/JPROC.2017.2687701
[3]	Baliga B J. Fundamentals of power semiconductor devices. New York: Springer Verlag, 2008
[4]	Kimoto T, Cooper J A. Fundamentals of silicon carbide technology. Singapore: Wiley, 2014
[5]	Tsuchida H, Kamata I, Jikimoto T, et al. Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor. J Cryst Growth, 2002, 237–239, 1206 doi: 10.1557/PROC-640-H2.12
[6]	Onishi Y, Iwamoto S, Sato T, et al. 24 mΩ·cm² 680 V silicon superjunction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2002, 241
[7]	Saito W, Omura I, Aida S, et al. A 20 mΩ·cm² 600 V-class Superjunction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2004, 459
[8]	Rub M, Bar M, Deboy G, et al. 550 V superjunction 3.9 Ω·mm² transistor formed by 25 MeV masked boron implantation. International Symposium on Power Semiconductor Devices and ICs, 2004, 455
[9]	Yamauchi S, Urakami Y, Tuji N, et al. Defect-less trench filling of epitaxial Si growth by H₂ annealing. International Symposium on Power Semiconductor Devices and ICs, 2002, 133
[10]	Iwamoto S, Takahashi K, Kuribayashi H, et al. Above 500 V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth. International Symposium on Power Semiconductor Devices and ICs, 2005, 31
[11]	Sakakibara J, Noda Y, Shibata T, et al. 600 V-class super junction MOSFET with high aspect ratio P/N columns structure. International Symposium on Power Semiconductor Devices and ICs, 2008, 299
[12]	Udrea F, Deboy G, Fujihira T. Superjunction power devices, history, development, and future prospects. IEEE Trans Electron Devices, 2017, 64(3), 713 doi: 10.1109/TED.2017.2658344
[13]	Kobayashi Y, Kyogoku S, Morimoto T, et al. High-temperature performance of 1.2 kV-class SiC super junction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2019, 31
[14]	Kosugi R, Sakuma Y, Kojima K, et al. First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method. International Symposium on Power Semiconductor Devices and ICs, 2014, 346
[15]	Rueb M. Addressing production of SiC super-junction MOSFETs. J Compd Semicond, 2019, 25(3), 38
[16]	Ishibashi N, Fukada K, Bandoh A, et al. High-quality 100/150 mm p-type 4H-SiC epitaxial wafer for high-voltage bipolar devices. Mater Sci Forum, 2017, 897, 55 doi: 10.4028/www.scientific.net/MSF.897.55
[17]	Ding R X, Yang Y T, Han R. Microtrenching effect of SiC ICP etching in SF₆/O₂ plasma. J Semicond, 2009, 30(1), 016001 doi: 10.1088/1674-4926/30/1/016001
[18]	Han C, Zhang Y, Song Q, et al. An improved ICP etching for mesa-terminated 4H-SiC P –i –N diodes. IEEE Trans Electron Devices, 2015, 62(4), 1223 doi: 10.1109/TED.2015.2403615
[19]	Beheim G M, Evans L J. Control of trenching and surface roughness in deep reactive ion etched 4H and 6H SiC. MRS Proc, 2006, 911, 0911 doi: 10.1557/PROC-0911-B10-15
[20]	Kimoto T, Yamamoto T, Chen Z Y, et al. 4H-SiC (11-20) epitaxial growth. Mater Sci Forum, 2000, 338–342, 189 doi: 10.4028/www.scientific.net/MSF.338-342.189
[21]	Takeuchi Y, Kataoka M, Kimoto T, et al. SiC migration enhanced embedded epitaxial (ME3) growth technology. Mater Sci Forum, 2006, 527–529, 251 doi: 10.4028/www.scientific.net/MSF.527-529.251
[22]	Kimoto T, Matsunami H. Surface diffusion lengths of adatoms on 6H-SiC{0001} faces in chemical vapor deposition of SiC. J Appl Phys, 1995, 78(5), 3132 doi: 10.1063/1.359999
[23]	Ji S, Kojima K, Kosugi R, et al. Influence of growth pressure on filling 4H-SiC trenches by CVD method. Jpn J Appl Phys, 2016, 55(1S), 01AC04 doi: 10.7567/JJAP.55.01AC04
[24]	Ji S, Kojima K, Kosugi R, et al. Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process. Appl Phys Express, 2015, 8(6), 065502 doi: 10.7567/APEX.8.065502
[25]	Kosugi R, Ji S, Mochizuki K, et al. Strong impact of slight trench direction misalignment from [11-20] on deep trench filling epitaxy for SiC super-junction devices. Jpn J Appl Phys, 2017, 56(4S), 04CR05 doi: 10.7567/JJAP.56.04CR05
[26]	Kosugi R, Sakuma Y, Kojima K, et al. Development of SiC super-junction (SJ) device by deep trench-filling epitaxial growth. Mater Sci Forum, 2013, 740–742, 785 doi: 10.4028/www.scientific.net/MSF.740-742.785
[27]	Kojima K, Nagata A, Ito S, et al. Filling of deep trench by epitaxial SiC growth. Mater Sci Forum, 2013, 742, 793 doi: 10.4028/www.scientific.net/MSF.740-742.793
[28]	Zhong X, Wang B, Sheng K. Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode. International Symposium on Power Semiconductor Devices and ICs, 2016, 231

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Received: 23 September 2020 Revised: 09 November 2020 Online: Accepted Manuscript: 28 December 2020Uncorrected proof: 29 December 2020Published: 01 June 2021

Article Navigation > Journal of Semiconductors > 2021 > 42(6): 061801

Run Tian, Chao Ma, Jingmin Wu, Zhiyu Guo, Xiang Yang, Zhongchao Fan. A review of manufacturing technologies for silicon carbide superjunction devices[J]. Journal of Semiconductors, 2021, 42(6): 061801. doi: 10.1088/1674-4926/42/6/061801 ****R Tian, C Ma, J M Wu, Z Y Guo, X Yang, Z C Fan, A review of manufacturing technologies for silicon carbide superjunction devices[J]. J. Semicond., 2021, 42(6): 061801. doi: 10.1088/1674-4926/42/6/061801.

Citation:

Run Tian, Chao Ma, Jingmin Wu, Zhiyu Guo, Xiang Yang, Zhongchao Fan. A review of manufacturing technologies for silicon carbide superjunction devices[J]. Journal of Semiconductors, 2021, 42(6): 061801. doi: 10.1088/1674-4926/42/6/061801 ****

R Tian, C Ma, J M Wu, Z Y Guo, X Yang, Z C Fan, A review of manufacturing technologies for silicon carbide superjunction devices[J]. J. Semicond., 2021, 42(6): 061801. doi: 10.1088/1674-4926/42/6/061801.

Citation:

PDF( 1641 KB)

A review of manufacturing technologies for silicon carbide superjunction devices

doi: 10.1088/1674-4926/42/6/061801

1.
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3.
University of Electronic Science and Technology of China, Chengdu 610054, China
4.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Run Tian：received her B.S. degree from the Northwest University, Shaanxi, China, in 2018. She is currently working toward the M.S. degree in microelectronics and solid-state electronics at the Institute of Semiconductors, Chinese Academy of Sciences (CAS), and in the University of Chinese Academy of Sciences. Her research interests include SiC materials, SiC power devices and semiconductor manufacturing processes
Chao Ma：received the M.S. degree in integrated circuit engineering from University of Chinese Academy of Sciences, Beijing, China. He works in the Institute of Microelectronics, Chinese Academy of Sciences (CAS). His research interests include integrated circuit design, integrated circuit technology innovation and industrial development planning
Zhongchao Fan：is a professor of the Institute of Semiconductors, Chinese Academy of Science (CAS). He received his Ph.D. degree from the Institute of Semiconductors, CAS in 2004. His current research interests include wide bandgap power devices, optoelectronic devices and integration technology
Corresponding author: machao@ime.ac.cn; zcfan@semi.ac.cn
Received Date: 2020-09-23
Revised Date: 2020-11-09
Published Date: 2021-06-10

Abstract

Abstract

Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off. It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices. Numerous efforts have been conducted to employ the same concept in silicon carbide devices. These works are summarized here.
- silicon carbide (SiC),
- power semiconductor devices,
- superjunction (SJ),
- process development

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References(28)

References

[1]	Baliga B J. Trends in power semiconductor devices. IEEE Trans Electron Devices, 1996, 43(10), 1717 doi: 10.1109/16.536818
[2]	Huang A Q. Power semiconductor devices for smart grid and renewable energy systems. J Proc IEEE, 2017, 105(11), 2019 doi: 10.1109/JPROC.2017.2687701
[3]	Baliga B J. Fundamentals of power semiconductor devices. New York: Springer Verlag, 2008
[4]	Kimoto T, Cooper J A. Fundamentals of silicon carbide technology. Singapore: Wiley, 2014
[5]	Tsuchida H, Kamata I, Jikimoto T, et al. Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor. J Cryst Growth, 2002, 237–239, 1206 doi: 10.1557/PROC-640-H2.12
[6]	Onishi Y, Iwamoto S, Sato T, et al. 24 mΩ·cm² 680 V silicon superjunction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2002, 241
[7]	Saito W, Omura I, Aida S, et al. A 20 mΩ·cm² 600 V-class Superjunction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2004, 459
[8]	Rub M, Bar M, Deboy G, et al. 550 V superjunction 3.9 Ω·mm² transistor formed by 25 MeV masked boron implantation. International Symposium on Power Semiconductor Devices and ICs, 2004, 455
[9]	Yamauchi S, Urakami Y, Tuji N, et al. Defect-less trench filling of epitaxial Si growth by H₂ annealing. International Symposium on Power Semiconductor Devices and ICs, 2002, 133
[10]	Iwamoto S, Takahashi K, Kuribayashi H, et al. Above 500 V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth. International Symposium on Power Semiconductor Devices and ICs, 2005, 31
[11]	Sakakibara J, Noda Y, Shibata T, et al. 600 V-class super junction MOSFET with high aspect ratio P/N columns structure. International Symposium on Power Semiconductor Devices and ICs, 2008, 299
[12]	Udrea F, Deboy G, Fujihira T. Superjunction power devices, history, development, and future prospects. IEEE Trans Electron Devices, 2017, 64(3), 713 doi: 10.1109/TED.2017.2658344
[13]	Kobayashi Y, Kyogoku S, Morimoto T, et al. High-temperature performance of 1.2 kV-class SiC super junction MOSFET. International Symposium on Power Semiconductor Devices and ICs, 2019, 31
[14]	Kosugi R, Sakuma Y, Kojima K, et al. First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method. International Symposium on Power Semiconductor Devices and ICs, 2014, 346
[15]	Rueb M. Addressing production of SiC super-junction MOSFETs. J Compd Semicond, 2019, 25(3), 38
[16]	Ishibashi N, Fukada K, Bandoh A, et al. High-quality 100/150 mm p-type 4H-SiC epitaxial wafer for high-voltage bipolar devices. Mater Sci Forum, 2017, 897, 55 doi: 10.4028/www.scientific.net/MSF.897.55
[17]	Ding R X, Yang Y T, Han R. Microtrenching effect of SiC ICP etching in SF₆/O₂ plasma. J Semicond, 2009, 30(1), 016001 doi: 10.1088/1674-4926/30/1/016001
[18]	Han C, Zhang Y, Song Q, et al. An improved ICP etching for mesa-terminated 4H-SiC P –i –N diodes. IEEE Trans Electron Devices, 2015, 62(4), 1223 doi: 10.1109/TED.2015.2403615
[19]	Beheim G M, Evans L J. Control of trenching and surface roughness in deep reactive ion etched 4H and 6H SiC. MRS Proc, 2006, 911, 0911 doi: 10.1557/PROC-0911-B10-15
[20]	Kimoto T, Yamamoto T, Chen Z Y, et al. 4H-SiC (11-20) epitaxial growth. Mater Sci Forum, 2000, 338–342, 189 doi: 10.4028/www.scientific.net/MSF.338-342.189
[21]	Takeuchi Y, Kataoka M, Kimoto T, et al. SiC migration enhanced embedded epitaxial (ME3) growth technology. Mater Sci Forum, 2006, 527–529, 251 doi: 10.4028/www.scientific.net/MSF.527-529.251
[22]	Kimoto T, Matsunami H. Surface diffusion lengths of adatoms on 6H-SiC{0001} faces in chemical vapor deposition of SiC. J Appl Phys, 1995, 78(5), 3132 doi: 10.1063/1.359999
[23]	Ji S, Kojima K, Kosugi R, et al. Influence of growth pressure on filling 4H-SiC trenches by CVD method. Jpn J Appl Phys, 2016, 55(1S), 01AC04 doi: 10.7567/JJAP.55.01AC04
[24]	Ji S, Kojima K, Kosugi R, et al. Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process. Appl Phys Express, 2015, 8(6), 065502 doi: 10.7567/APEX.8.065502
[25]	Kosugi R, Ji S, Mochizuki K, et al. Strong impact of slight trench direction misalignment from [11-20] on deep trench filling epitaxy for SiC super-junction devices. Jpn J Appl Phys, 2017, 56(4S), 04CR05 doi: 10.7567/JJAP.56.04CR05
[26]	Kosugi R, Sakuma Y, Kojima K, et al. Development of SiC super-junction (SJ) device by deep trench-filling epitaxial growth. Mater Sci Forum, 2013, 740–742, 785 doi: 10.4028/www.scientific.net/MSF.740-742.785
[27]	Kojima K, Nagata A, Ito S, et al. Filling of deep trench by epitaxial SiC growth. Mater Sci Forum, 2013, 742, 793 doi: 10.4028/www.scientific.net/MSF.740-742.793
[28]	Zhong X, Wang B, Sheng K. Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode. International Symposium on Power Semiconductor Devices and ICs, 2016, 231

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