Engineering microstructures for efficient Sb2(S xSe1−x)3 solar cells

Rongfeng Tang; Tao Chen; Liming Ding

doi:10.1088/1674-4926/42/7/070203

J. Semicond. > 2021, Volume 42 > Issue 7 > 070203

RESEARCH HIGHLIGHTS

Engineering microstructures for efficient Sb₂(S _xSe_1−x)₃ solar cells

Rongfeng Tang¹, Tao Chen^1, and Liming Ding^2,

+ Author Affiliations

1. Hefei National Laboratory for Physical Sciences at Microscale, Key Laboratory of Materials for Energy Conversion (CAS), School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China
2. Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

Author Bio:

Rongfeng Tang received her PhD degree in 2019 from University of Science and Technology of China (USTC) under the supervision of Professor Tao Chen. Currently she is a postdoc in Tao Chen group. Her research focuses on antimony chalcogenides semiconductors and devices.

Tao Chen obtained his PhD degree from Nanyang Technological University, Singapore, in 2010. In 2011, he joined Department of Physics, Chinese University of Hong Kong as a research assistant professor. Since 2015, he has been working in Department of Materials Science and Engineering, University of Science and Technology of China as a full professor. His work focuses on metal chalcogenides solar cells.

Liming Ding got his PhD from University of Science and Technology of China (was a joint student at Changchun Institute of Applied Chemistry, CAS). He started his research on OSCs and PLEDs in Olle Inganäs Lab in 1998. Later on, he worked at National Center for Polymer Research, Wright-Patterson Air Force Base and Argonne National Lab (USA). He joined Konarka as a Senior Scientist in 2008. In 2010, he joined National Center for Nanoscience and Technology as a full professor. His research focuses on innovative materials and devices. He is RSC Fellow, the nominator for Xplorer Prize, and the Associate Editors for Science Bulletin and Journal of Semiconductors.

Corresponding author: Tao Chen, tchenmse@ustc.edu.cn; Liming Ding, ding@nanoctr.cn

DOI: 10.1088/1674-4926/42/7/070203

References

[1]	Lei H W, Chen J J, Tan Z J, et al. Review of recent progress in antimony chalcogenide-based solar cells: materials and devices. Sol RRL, 2019, 3, 1900026 doi: 10.1002/solr.201900026
[2]	Deng H, Zeng Y Y, Ishaq M, et al. Quasiepitaxy strategy for efficient full-inorganic Sb₂S₃ solar cells. Adv Funct Mater, 2019, 29, 1901720 doi: 10.1002/adfm.201901720
[3]	Wu C Y, Lian W T, Zhang L J, et al. Water additive enhanced solution processing of alloy Sb₂(S_{1– x}Se_x)₃-based solar cells. Sol RRL, 2020, 4, 1900582 doi: 10.1002/solr.201900582
[4]	Wang L, Li D B, Li K H, et al. Stable 6%-efficient Sb₂Se₃ solar cells with a ZnO buffer layer. Nat Energy, 2017, 2, 17046 doi: 10.1038/nenergy.2017.46
[5]	Tang R F, Wang X M, Lian W T, et al. Hydrothermal deposition of antimony selenosulfide thin films enables solar cells with 10% efficiency. Nat Energy, 2020, 5, 587 doi: 10.1038/s41560-020-0652-3
[6]	Wang X M, Tang R F, Jiang C H, et al. Manipulating the electrical properties of Sb₂(S, Se)₃ film for high-efficiency solar cell. Adv Energy Mater, 2020, 10, 2002341 doi: 10.1002/aenm.202002341
[7]	Wen X X, Chen C, Lu S C, et al. Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency. Nat Commun, 2018, 9, 2179 doi: 10.1038/s41467-018-04634-6
[8]	Li Z Q, Liang X Y, Li G, et al. 9.2%-efficient core-shell structured antimony selenide nanorod array solar cells. Nat Commun, 2019, 10, 125 doi: 10.1038/s41467-018-07903-6
[9]	Zhou Y, Wang L, Chen S Y, et al. Thin-film Sb₂Se₃ photovoltaics with oriented one-dimensional ribbons and benign grain boundaries. Nat Photonics, 2015, 9, 409 doi: 10.1038/nphoton.2015.78
[10]	Yang Z L, Wang X M, Chen Y Z, et al. Ultrafast self-trapping of photoexcited carriers sets the upper limit onantimony trisulfide photovoltaic devices. Nat Commun, 2019, 10, 4540 doi: 10.1038/s41467-019-12445-6
[11]	Li J J, Huang J L, Li K H, et al. Defect-resolved effective majority carrier mobility in highly anisotropic antimony chalcogenide thin-film solar cells. Sol RRL, 2021, 5, 2000693 doi: 10.1002/solr.202000693
[12]	Williams R E, Ramasse Q M, McKenna K P, et al. Evidence for self-healing benign grain boundaries and a highly defective Sb₂Se₃-CdS interfacial layer in Sb₂Se₃ thin-film photovoltaics. ACS Appl Mater Interfaces, 2020, 12, 21730 doi: 10.1021/acsami.0c03690
[13]	Chen C, Tang J. Open-circuit voltage loss of antimony chalcogenide solar cells: status, origin, and possible solutions. ACS Energy Lett, 2020, 5, 2294 doi: 10.1021/acsenergylett.0c00940
[14]	Maiti A, Chatterjee S, Pal A J. Sulfur-vacancy passivation in solution-processed Sb₂S₃ thin films: Influence on photovoltaic interfaces. ACS Appl Energy Mater, 2020, 3, 810 doi: 10.1021/acsaem.9b01951
[15]	Ayala-Mató F, Vigil-Galán O, Nicolás-Marín M M, et al. Study of loss mechanisms on Sb₂(S_{1– x}Se_x)₃ solar cell with n-i-p structure: Toward an efficiency promotion. Appl Phys Lett, 2021, 118, 73903 doi: 10.1063/5.0032867

Fig. 1. (Color online) (a) Crystal structure of Sb₂S(e)₃. (b) Schematic for the hydrothermal deposition of Sb₂(S,Se)₃ in an autoclave, Copyright 2020, Springer Nature^[5]. (c) Shockley-Queisser limit (black line) achieved by record-efficiency cells, grey lines showing 75% and 50% of the limit, Copyright 2020, https://www.lmpv.nl/sq/. (d) Two-step formation process of self-trapped excitons (STEs) in Sb₂S₃: hole is self-trapped first and then electron is captured by trapped hole to form STE, Copyright 2019, Springer Nature^[10]. (e) Schematic diagram for the carrier transport near the dislocations along (001) orientation of Sb₂Se₃, Copyright 2021, John Wiley and Sons^[11]. (f) EDX line scan for sample Sb₂Se₃/CdS (Sb₂Se₃ from CSS approach), Copyright 2020, American Chemical Society^[12].

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[1]	Lei H W, Chen J J, Tan Z J, et al. Review of recent progress in antimony chalcogenide-based solar cells: materials and devices. Sol RRL, 2019, 3, 1900026 doi: 10.1002/solr.201900026
[2]	Deng H, Zeng Y Y, Ishaq M, et al. Quasiepitaxy strategy for efficient full-inorganic Sb₂S₃ solar cells. Adv Funct Mater, 2019, 29, 1901720 doi: 10.1002/adfm.201901720
[3]	Wu C Y, Lian W T, Zhang L J, et al. Water additive enhanced solution processing of alloy Sb₂(S_{1– x}Se_x)₃-based solar cells. Sol RRL, 2020, 4, 1900582 doi: 10.1002/solr.201900582
[4]	Wang L, Li D B, Li K H, et al. Stable 6%-efficient Sb₂Se₃ solar cells with a ZnO buffer layer. Nat Energy, 2017, 2, 17046 doi: 10.1038/nenergy.2017.46
[5]	Tang R F, Wang X M, Lian W T, et al. Hydrothermal deposition of antimony selenosulfide thin films enables solar cells with 10% efficiency. Nat Energy, 2020, 5, 587 doi: 10.1038/s41560-020-0652-3
[6]	Wang X M, Tang R F, Jiang C H, et al. Manipulating the electrical properties of Sb₂(S, Se)₃ film for high-efficiency solar cell. Adv Energy Mater, 2020, 10, 2002341 doi: 10.1002/aenm.202002341
[7]	Wen X X, Chen C, Lu S C, et al. Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency. Nat Commun, 2018, 9, 2179 doi: 10.1038/s41467-018-04634-6
[8]	Li Z Q, Liang X Y, Li G, et al. 9.2%-efficient core-shell structured antimony selenide nanorod array solar cells. Nat Commun, 2019, 10, 125 doi: 10.1038/s41467-018-07903-6
[9]	Zhou Y, Wang L, Chen S Y, et al. Thin-film Sb₂Se₃ photovoltaics with oriented one-dimensional ribbons and benign grain boundaries. Nat Photonics, 2015, 9, 409 doi: 10.1038/nphoton.2015.78
[10]	Yang Z L, Wang X M, Chen Y Z, et al. Ultrafast self-trapping of photoexcited carriers sets the upper limit onantimony trisulfide photovoltaic devices. Nat Commun, 2019, 10, 4540 doi: 10.1038/s41467-019-12445-6
[11]	Li J J, Huang J L, Li K H, et al. Defect-resolved effective majority carrier mobility in highly anisotropic antimony chalcogenide thin-film solar cells. Sol RRL, 2021, 5, 2000693 doi: 10.1002/solr.202000693
[12]	Williams R E, Ramasse Q M, McKenna K P, et al. Evidence for self-healing benign grain boundaries and a highly defective Sb₂Se₃-CdS interfacial layer in Sb₂Se₃ thin-film photovoltaics. ACS Appl Mater Interfaces, 2020, 12, 21730 doi: 10.1021/acsami.0c03690
[13]	Chen C, Tang J. Open-circuit voltage loss of antimony chalcogenide solar cells: status, origin, and possible solutions. ACS Energy Lett, 2020, 5, 2294 doi: 10.1021/acsenergylett.0c00940
[14]	Maiti A, Chatterjee S, Pal A J. Sulfur-vacancy passivation in solution-processed Sb₂S₃ thin films: Influence on photovoltaic interfaces. ACS Appl Energy Mater, 2020, 3, 810 doi: 10.1021/acsaem.9b01951
[15]	Ayala-Mató F, Vigil-Galán O, Nicolás-Marín M M, et al. Study of loss mechanisms on Sb₂(S_{1– x}Se_x)₃ solar cell with n-i-p structure: Toward an efficiency promotion. Appl Phys Lett, 2021, 118, 73903 doi: 10.1063/5.0032867