J. Semicond. > 2021, Volume 42 > Issue 7 > 072701
|

ARTICLES

Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method

S. Kerour1, 2, A. Bouloufa1, 2, , M. Lasladj1, 2, K. Djessas3 and K. Medjnoun3

+ Author Affiliations

 Corresponding author: A. Bouloufa, abdeslam_bouloufa@yahoo.fr

DOI: 10.1088/1674-4926/42/7/072701

PDF

Turn off MathJax

Abstract: In this work, a Cu2ZnSnS4 (CZTS) ingot is grown via a melting method, then cooled; the resulting molten stoichiometric mixture is sealed off in a quartz ampoule under vacuum. The CZTS powder chemical composition analyses are determined using energy dispersive spectroscopy, and revealing the slightly Cu-rich and Zn-poor character of the ingot. Powder X-ray diffraction analysis reveals a crystalline structure with a kesterite phase formation, and a preferred orientation of (112) plane. The lattice constants of the a- and c- axes, calculated based on the XRD analyses, are a = 5.40 Å and c = 10.84 Å. Based on Hall measurements at room temperature, we find that the crystal exhibits p-type conductivity, with a high concentration of 1018 cm–3, a resistivity of 1.7 Ω cm, and a mobility of 10.69 cm2V–1s–1. Activation energies are estimated based on an Arrhenius plot of conductivity versus 1/T, for a temperature range of 80–350 K, measuring 35 and 160 meV in low- and high-temperature regimes, respectively, which is attributed to complex defects (2CuZn+SnZn) and antisite defects (CuZn), respectively. The observed scattering mechanisms are attributed to ionized impurities and acoustic phonons at low and high temperatures, respectively. The extracted band-gap is 1.37 eV.

Key words: Cu2ZnSnS4, growth, melting method, kesterite, Hall measurements



[1]
Owusu P A, Asumadu-Sarkodie S. A review of renewable energy sources, sustainability issues and climate change mitigation. Cogent Eng, 2016, 3, 1167990 doi: 10.1080/23311916.2016.1167990
[2]
Kato T, Wu J L, Hirai Y, et al. Record efficiency for thin-film polycrystalline solar cells up to 22.9% achieved by Cs-treated Cu(In, Ga)(Se, S)2. IEEE J Photovolt, 2019, 9, 325 doi: 10.1109/JPHOTOV.2018.2882206
[3]
Nakamura M, Yamaguchi K, Kimoto Y, et al. Cd-free Cu(In, Ga)(Se, S)2 thin-film solar cell with record efficiency of 23.35%. IEEE J Photovolt, 2019, 9, 1863 doi: 10.1109/JPHOTOV.2019.2937218
[4]
Candelise C, Winskel M, Gross R. Implications for CdTe and CIGS technologies production costs of indium and tellurium scarcity. Prog Photovolt: Res Appl, 2012, 20, 816 doi: 10.1002/pip.2216
[5]
Wadia C, Alivisatos A P, Kammen D M. Materials availability expands the opportunity for large-scale photovoltaics deployment. Environ Sci Technol, 2009, 43, 2072 doi: 10.1021/es8019534
[6]
Terlemezoglu M, Bayraklı Sürücü Ö, Dogru C, et al. CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications. J Mater Sci: Mater Electron, 2019, 30, 11301 doi: 10.1007/s10854-019-01477-9
[7]
Lai F I, Yang J F, Wei Y L, et al. High quality sustainable Cu2ZnSnSe4 (CZTSe) absorber layers in highly efficient CZTSe solar cells. Green Chem, 2017, 19, 795 doi: 10.1039/C6GC02300B
[8]
Paranthaman M P, Wong-Ng W, Bhattacharya R N. Semiconductor materials for solar photovoltaic cells. Cham: Springer International Publishing, 2016
[9]
Kishore Kumar Y B, Suresh Babu G, Uday Bhaskar P, et al. Preparation and characterization of spray-deposited Cu2ZnSnS4 thin films. Sol Energy Mater Sol Cells, 2009, 93, 1230 doi: 10.1016/j.solmat.2009.01.011
[10]
Ziti A, Hartiti B, Labrim H, et al. Effect of copper concentration on physical properties of CZTS thin films deposited by dip-coating technique. Appl Phys A, 2019, 125, 1 doi: 10.1007/s00339-019-2513-0
[11]
Gour K S, Yadav A K, Singh O P, et al. Na incorporated improved properties of Cu2ZnSnS4 (CZTS) thin film by DC sputtering. Vacuum, 2018, 154, 148 doi: 10.1016/j.vacuum.2018.05.007
[12]
Ito K, Nakazawa T. Electrical and optical properties of stannite-type quaternary semiconductor thin films. Jpn J Appl Phys, 1988, 27, 2094 doi: 10.1143/JJAP.27.2094
[13]
Katagiri H, Jimbo K, Yamada S, et al. Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique. Appl Phys Express, 2008, 1, 041201 doi: 10.1143/APEX.1.041201
[14]
Ito K. Copper zinc tin sulfide-based thin-film solar cells. Chichester, UK: John Wiley & Sons Ltd, 2014
[15]
Wang W, Winkler M T, Gunawan O, et al. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency. Adv Energy Mater, 2014, 4, 1301465 doi: 10.1002/aenm.201301465
[16]
Shockley W, Queisser H J. Detailed balance limit of efficiency of p-n junction solar cells. J Appl Phys, 1961, 32, 510 doi: 10.1063/1.1736034
[17]
Mai D L, Park H J, Choi I H. Growth of Cu2ZnSnS4 crystals by the directional freezing method with an induction heater. J Cryst Growth, 2014, 402, 104 doi: 10.1016/j.jcrysgro.2014.05.014
[18]
Grossberg M, Krustok J, Raadik T, et al. Photoluminescence study of disordering in the cation sublattice of Cu2ZnSnS4. Curr Appl Phys, 2014, 14, 1424 doi: 10.1016/j.cap.2014.08.013
[19]
Choubrac L, Lafond A, Guillot-Deudon C, et al. Structure flexibility of the Cu2ZnSnS4 absorber in low-cost photovoltaic cells: From the stoichiometric to the copper-poor compounds. Inorg Chem, 2012, 51, 3346 doi: 10.1021/ic202569q
[20]
Nagaoka A, Yoshino K, Taniguchi H, et al. Growth of Cu2ZnSnS4 single crystal by traveling heater method. Jpn J Appl Phys, 2011, 50, 128001 doi: 10.1143/JJAP.50.128001
[21]
Nagaoka A, Yoshino K, Taniguchi H, et al. Growth and characterization of Cu2ZnSnS4 single crystals. Phys Status Solidi A, 2013, 210, 1328 doi: 10.1002/pssa.201200815
[22]
Das S, Krishna R M, Ma S G, et al. Single phase polycrystalline Cu2ZnSnS4 grown by vertical gradient freeze technique. J Cryst Growth, 2013, 381, 148 doi: 10.1016/j.jcrysgro.2013.07.022
[23]
Ben Marai A, Ben Belgacem J, Ben Ayadi Z, et al. Structural and optical properties of CuIn1– xGaxSe2 nanoparticles synthesized by solvothermal route. J Alloy Compd, 2016, 658, 961 doi: 10.1016/j.jallcom.2015.10.287
[24]
Lahlali S, Belaqziz M, Amhil S, et al. Structural, optical and electrical properties of CuIn0.7Ga0.3Se2 ingot prepared by direct melting. J Electron Mater, 2020, 49, 7518 doi: 10.1007/s11664-020-08463-6
[25]
Sagna A, Djessas K, Sene C, et al. Close spaced vapor transport deposition of Cu2ZnSnS4 thin films: Effect of iodine pressure. J Alloy Compd, 2016, 685, 699 doi: 10.1016/j.jallcom.2016.05.297
[26]
Tomlinson R D. Fabrication of CuInSe2 single crystals using melt-growth techniques. Sol Cells, 1986, 16, 17 doi: 10.1016/0379-6787(86)90072-4
[27]
Peng D Y, Zhao J J. Representation of the vapour pressures of sulfur. J Chem Thermodyn, 2001, 33, 1121 doi: 10.1006/jcht.2001.0835
[28]
Sagna A. Etude et élaboration par close-spaced vapor transport (CSVT), d’absorbeurs Cu2ZnSnS4 en couches minces polycristallines destinées à la réalisation de photopiles à faible coût. PhD Dissertation, Université Perpignan, 2016 (in French)
[29]
Shah J S. Growth, morphology and impurity characterisation of some I III IV2 sulphides and selenides. Prog Cryst Growth Charact, 1980, 3, 333 doi: 10.1016/0146-3535(80)90005-2
[30]
Atkins P W, De Paula J. Physical chemistry for the life sciences. Oxford: Oxford University Press, 2011
[31]
Sharma R C, Chang Y A. The S−Sn (sulfur-tin) system. Bull Alloy Phase Diagrams, 1986, 7, 269 doi: 10.1007/BF02869004
[32]
Sharma K C, Chang Y A. The S-Zn (sulfur-zinc) system. J Phase Equilibria, 1996, 17, 261 doi: 10.1007/BF02648496
[33]
Chakrabarti D J, Laughlin D E. The Cu-S (copper-sulfur) system. Bull Alloy Phase Diagrams, 1983, 4, 254 doi: 10.1007/BF02868665
[34]
Hergert F, Hock R. Predicted formation reactions for the solid-state syntheses of the semiconductor materials Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) starting from binary chalcogenides. Thin Solid Films, 2007, 515, 5953 doi: 10.1016/j.tsf.2006.12.096
[35]
Chen S Y, Walsh A, Gong X G, et al. Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers. Adv Mater, 2013, 25, 1522 doi: 10.1002/adma.201203146
[36]
Olekseyuk I D, Dudchak I V, Piskach L V. Phase equilibria in the Cu2S-ZnS-SnS2 system. J Alloy Compd, 2004, 368, 135 doi: 10.1016/j.jallcom.2003.08.084
[37]
Wojdyr M. Fityk: a general-purpose peak fitting program. J Appl Crystallogr, 2010, 43, 1126 doi: 10.1107/S0021889810030499
[38]
Katagiri H, Ishigaki N, Ishida T, et al. Characterization of Cu2ZnSnS4 thin films prepared by vapor phase sulfurization. Jpn J Appl Phys, 2001, 40, 500 doi: 10.1143/JJAP.40.500
[39]
Nakayama N, Ito K. Sprayed films of stannite Cu2ZnSnS4. Appl Surf Sci, 1996, 92, 171 doi: 10.1016/0169-4332(95)00225-1
[40]
Tanaka T, Sueishi T, Saito K, et al. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films. J Appl Phys, 2012, 111, 053522 doi: 10.1063/1.3691964
[41]
Nagaoka A, Katsube R, Nakatsuka S, et al. Growth and characterization of Cu2ZnSn(SxSe1− x)4 single crystal grown by traveling heater method. J Cryst Growth, 2015, 423, 9 doi: 10.1016/j.jcrysgro.2015.04.012
[42]
Nagaoka A, Scarpulla M A, Yoshino K. Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method. J Cryst Growth, 2016, 453, 119 doi: 10.1016/j.jcrysgro.2016.08.014
[43]
Petritz R L. Theory of photoconductivity in semiconductor films. Phys Rev, 1956, 104, 1508 doi: 10.1103/PhysRev.104.1508
[44]
Blatt F J. Scattering of carriers by ionized impurities in semiconductors. J Phys Chem Solids, 1957, 1, 262 doi: 10.1016/0022-3697(57)90014-8
[45]
Debye P P, Conwell E M. Electrical properties of N-type germanium. Phys Rev, 1954, 93, 693 doi: 10.1103/PhysRev.93.693
Fig. 1.  The ampoule containing the constituent elements of CZTS under evacuation.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  The obtained ingot of CZTS.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  EDS spectrum of CZTS ingot.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Powder XRD pattern of the as-grown ingot.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  Arrhenius plot of ln σ versus reverse temperature.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Temperature dependence of mobility.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  Carrier concentration versus 1/T.

DownLoad: Full-Size Img PowerPoint

Table 1.   Chemical composition of CZTS.

Atomic composition (%)Cu/(Zn+Sn)Zn/Sn
CuZnSnS
Point 131.6111.6812.8843.831.280.9
Point 227.7310.2412.0749.961.240.85
Average29.6710.9612.4746.891.260.88
DownLoad: CSV
[1]
Owusu P A, Asumadu-Sarkodie S. A review of renewable energy sources, sustainability issues and climate change mitigation. Cogent Eng, 2016, 3, 1167990 doi: 10.1080/23311916.2016.1167990
[2]
Kato T, Wu J L, Hirai Y, et al. Record efficiency for thin-film polycrystalline solar cells up to 22.9% achieved by Cs-treated Cu(In, Ga)(Se, S)2. IEEE J Photovolt, 2019, 9, 325 doi: 10.1109/JPHOTOV.2018.2882206
[3]
Nakamura M, Yamaguchi K, Kimoto Y, et al. Cd-free Cu(In, Ga)(Se, S)2 thin-film solar cell with record efficiency of 23.35%. IEEE J Photovolt, 2019, 9, 1863 doi: 10.1109/JPHOTOV.2019.2937218
[4]
Candelise C, Winskel M, Gross R. Implications for CdTe and CIGS technologies production costs of indium and tellurium scarcity. Prog Photovolt: Res Appl, 2012, 20, 816 doi: 10.1002/pip.2216
[5]
Wadia C, Alivisatos A P, Kammen D M. Materials availability expands the opportunity for large-scale photovoltaics deployment. Environ Sci Technol, 2009, 43, 2072 doi: 10.1021/es8019534
[6]
Terlemezoglu M, Bayraklı Sürücü Ö, Dogru C, et al. CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications. J Mater Sci: Mater Electron, 2019, 30, 11301 doi: 10.1007/s10854-019-01477-9
[7]
Lai F I, Yang J F, Wei Y L, et al. High quality sustainable Cu2ZnSnSe4 (CZTSe) absorber layers in highly efficient CZTSe solar cells. Green Chem, 2017, 19, 795 doi: 10.1039/C6GC02300B
[8]
Paranthaman M P, Wong-Ng W, Bhattacharya R N. Semiconductor materials for solar photovoltaic cells. Cham: Springer International Publishing, 2016
[9]
Kishore Kumar Y B, Suresh Babu G, Uday Bhaskar P, et al. Preparation and characterization of spray-deposited Cu2ZnSnS4 thin films. Sol Energy Mater Sol Cells, 2009, 93, 1230 doi: 10.1016/j.solmat.2009.01.011
[10]
Ziti A, Hartiti B, Labrim H, et al. Effect of copper concentration on physical properties of CZTS thin films deposited by dip-coating technique. Appl Phys A, 2019, 125, 1 doi: 10.1007/s00339-019-2513-0
[11]
Gour K S, Yadav A K, Singh O P, et al. Na incorporated improved properties of Cu2ZnSnS4 (CZTS) thin film by DC sputtering. Vacuum, 2018, 154, 148 doi: 10.1016/j.vacuum.2018.05.007
[12]
Ito K, Nakazawa T. Electrical and optical properties of stannite-type quaternary semiconductor thin films. Jpn J Appl Phys, 1988, 27, 2094 doi: 10.1143/JJAP.27.2094
[13]
Katagiri H, Jimbo K, Yamada S, et al. Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique. Appl Phys Express, 2008, 1, 041201 doi: 10.1143/APEX.1.041201
[14]
Ito K. Copper zinc tin sulfide-based thin-film solar cells. Chichester, UK: John Wiley & Sons Ltd, 2014
[15]
Wang W, Winkler M T, Gunawan O, et al. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency. Adv Energy Mater, 2014, 4, 1301465 doi: 10.1002/aenm.201301465
[16]
Shockley W, Queisser H J. Detailed balance limit of efficiency of p-n junction solar cells. J Appl Phys, 1961, 32, 510 doi: 10.1063/1.1736034
[17]
Mai D L, Park H J, Choi I H. Growth of Cu2ZnSnS4 crystals by the directional freezing method with an induction heater. J Cryst Growth, 2014, 402, 104 doi: 10.1016/j.jcrysgro.2014.05.014
[18]
Grossberg M, Krustok J, Raadik T, et al. Photoluminescence study of disordering in the cation sublattice of Cu2ZnSnS4. Curr Appl Phys, 2014, 14, 1424 doi: 10.1016/j.cap.2014.08.013
[19]
Choubrac L, Lafond A, Guillot-Deudon C, et al. Structure flexibility of the Cu2ZnSnS4 absorber in low-cost photovoltaic cells: From the stoichiometric to the copper-poor compounds. Inorg Chem, 2012, 51, 3346 doi: 10.1021/ic202569q
[20]
Nagaoka A, Yoshino K, Taniguchi H, et al. Growth of Cu2ZnSnS4 single crystal by traveling heater method. Jpn J Appl Phys, 2011, 50, 128001 doi: 10.1143/JJAP.50.128001
[21]
Nagaoka A, Yoshino K, Taniguchi H, et al. Growth and characterization of Cu2ZnSnS4 single crystals. Phys Status Solidi A, 2013, 210, 1328 doi: 10.1002/pssa.201200815
[22]
Das S, Krishna R M, Ma S G, et al. Single phase polycrystalline Cu2ZnSnS4 grown by vertical gradient freeze technique. J Cryst Growth, 2013, 381, 148 doi: 10.1016/j.jcrysgro.2013.07.022
[23]
Ben Marai A, Ben Belgacem J, Ben Ayadi Z, et al. Structural and optical properties of CuIn1– xGaxSe2 nanoparticles synthesized by solvothermal route. J Alloy Compd, 2016, 658, 961 doi: 10.1016/j.jallcom.2015.10.287
[24]
Lahlali S, Belaqziz M, Amhil S, et al. Structural, optical and electrical properties of CuIn0.7Ga0.3Se2 ingot prepared by direct melting. J Electron Mater, 2020, 49, 7518 doi: 10.1007/s11664-020-08463-6
[25]
Sagna A, Djessas K, Sene C, et al. Close spaced vapor transport deposition of Cu2ZnSnS4 thin films: Effect of iodine pressure. J Alloy Compd, 2016, 685, 699 doi: 10.1016/j.jallcom.2016.05.297
[26]
Tomlinson R D. Fabrication of CuInSe2 single crystals using melt-growth techniques. Sol Cells, 1986, 16, 17 doi: 10.1016/0379-6787(86)90072-4
[27]
Peng D Y, Zhao J J. Representation of the vapour pressures of sulfur. J Chem Thermodyn, 2001, 33, 1121 doi: 10.1006/jcht.2001.0835
[28]
Sagna A. Etude et élaboration par close-spaced vapor transport (CSVT), d’absorbeurs Cu2ZnSnS4 en couches minces polycristallines destinées à la réalisation de photopiles à faible coût. PhD Dissertation, Université Perpignan, 2016 (in French)
[29]
Shah J S. Growth, morphology and impurity characterisation of some I III IV2 sulphides and selenides. Prog Cryst Growth Charact, 1980, 3, 333 doi: 10.1016/0146-3535(80)90005-2
[30]
Atkins P W, De Paula J. Physical chemistry for the life sciences. Oxford: Oxford University Press, 2011
[31]
Sharma R C, Chang Y A. The S−Sn (sulfur-tin) system. Bull Alloy Phase Diagrams, 1986, 7, 269 doi: 10.1007/BF02869004
[32]
Sharma K C, Chang Y A. The S-Zn (sulfur-zinc) system. J Phase Equilibria, 1996, 17, 261 doi: 10.1007/BF02648496
[33]
Chakrabarti D J, Laughlin D E. The Cu-S (copper-sulfur) system. Bull Alloy Phase Diagrams, 1983, 4, 254 doi: 10.1007/BF02868665
[34]
Hergert F, Hock R. Predicted formation reactions for the solid-state syntheses of the semiconductor materials Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) starting from binary chalcogenides. Thin Solid Films, 2007, 515, 5953 doi: 10.1016/j.tsf.2006.12.096
[35]
Chen S Y, Walsh A, Gong X G, et al. Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers. Adv Mater, 2013, 25, 1522 doi: 10.1002/adma.201203146
[36]
Olekseyuk I D, Dudchak I V, Piskach L V. Phase equilibria in the Cu2S-ZnS-SnS2 system. J Alloy Compd, 2004, 368, 135 doi: 10.1016/j.jallcom.2003.08.084
[37]
Wojdyr M. Fityk: a general-purpose peak fitting program. J Appl Crystallogr, 2010, 43, 1126 doi: 10.1107/S0021889810030499
[38]
Katagiri H, Ishigaki N, Ishida T, et al. Characterization of Cu2ZnSnS4 thin films prepared by vapor phase sulfurization. Jpn J Appl Phys, 2001, 40, 500 doi: 10.1143/JJAP.40.500
[39]
Nakayama N, Ito K. Sprayed films of stannite Cu2ZnSnS4. Appl Surf Sci, 1996, 92, 171 doi: 10.1016/0169-4332(95)00225-1
[40]
Tanaka T, Sueishi T, Saito K, et al. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films. J Appl Phys, 2012, 111, 053522 doi: 10.1063/1.3691964
[41]
Nagaoka A, Katsube R, Nakatsuka S, et al. Growth and characterization of Cu2ZnSn(SxSe1− x)4 single crystal grown by traveling heater method. J Cryst Growth, 2015, 423, 9 doi: 10.1016/j.jcrysgro.2015.04.012
[42]
Nagaoka A, Scarpulla M A, Yoshino K. Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method. J Cryst Growth, 2016, 453, 119 doi: 10.1016/j.jcrysgro.2016.08.014
[43]
Petritz R L. Theory of photoconductivity in semiconductor films. Phys Rev, 1956, 104, 1508 doi: 10.1103/PhysRev.104.1508
[44]
Blatt F J. Scattering of carriers by ionized impurities in semiconductors. J Phys Chem Solids, 1957, 1, 262 doi: 10.1016/0022-3697(57)90014-8
[45]
Debye P P, Conwell E M. Electrical properties of N-type germanium. Phys Rev, 1954, 93, 693 doi: 10.1103/PhysRev.93.693

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2989 Times PDF downloads: 32 Times Cited by: 0 Times

    History

    Received: 02 December 2020 Revised: 20 January 2021 Online: Accepted Manuscript: 31 March 2021Uncorrected proof: 09 April 2021Published: 05 July 2021

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2021  >  42(7): 072701
      S. Kerour, A. Bouloufa, M. Lasladj, K. Djessas, K. Medjnoun. Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method[J]. Journal of Semiconductors, 2021, 42(7): 072701. doi: 10.1088/1674-4926/42/7/072701 ****S Kerour, A Bouloufa, M Lasladj, K Djessas, K Medjnoun, Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method[J]. J. Semicond., 2021, 42(7): 072701. doi: 10.1088/1674-4926/42/7/072701.
      Citation:
      S. Kerour, A. Bouloufa, M. Lasladj, K. Djessas, K. Medjnoun. Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method[J]. Journal of Semiconductors, 2021, 42(7): 072701. doi: 10.1088/1674-4926/42/7/072701 ****
      S Kerour, A Bouloufa, M Lasladj, K Djessas, K Medjnoun, Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method[J]. J. Semicond., 2021, 42(7): 072701. doi: 10.1088/1674-4926/42/7/072701.
      shu

      Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method

      DOI: 10.1088/1674-4926/42/7/072701
      • 1.

        Département d’électronique, Faculté de Technologie, Université Ferhat Abbas Sétif-1, 19000 Sétif, Algeria

      • 2.

        Laboratoire d’Electrochimie et Matériaux, Université Ferhat Abbas Sétif-1, 19000 Sétif, Algeria

      • 3.

        Laboratoire PROMES-CNRS, Université Via Domitia Perpignan, 66100, France

      More Information
      • S. Kerour：received, in 2014, the Magister degree in Electronic Instrumenation from Ferhat Abbas Sétif-1Univesity, Algeria. She is currently working toward the PhD degree with the Electrochemical and Materials Laboratory. She researched on growth, characterization and efficiency improvement of low-cost CZTS thin films solar cells. She participated in several international conferences and will present her PhD thesis this year
      • A. Bouloufa：is a Professor of Microelectronics at Ferhat Abbas Sétif-1 University, Algeria. He is the head of reserchers group at Electrochemical and Materials Laboratory. His work focuses on the new materials for second generation solar cells. He supervised several PhD theses and directed international research projects in the same area. He coauthored several scientific articles on low-cost materials and solar cells
      • Corresponding author: abdeslam_bouloufa@yahoo.fr
      • Received Date: 2020-12-02
      • Revised Date: 2021-01-20
      • Published Date: 2021-07-10

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return