J. Semicond. > 2021, Volume 42 > Issue 8 > 081001
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REVIEWS

Black phosphorus junctions and their electrical and optoelectronic applications

Ningqin Deng3, He Tian1, 2, , Jian Zhang3, Jinming Jian1, 2, Fan Wu1, 2, Yang Shen1, 2, Yi Yang1, 2 and Tian-Ling Ren1, 2,

+ Author Affiliations

 Corresponding author: He Tian, tianhe88@tsinghua.edu.cn; Tian-Ling Ren, RenTL@tsinghua.edu.cn

DOI: 10.1088/1674-4926/42/8/081001

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Abstract: Black phosphorus (BP), an emerging two-dimensional material, is considered a promising candidate for next-generation electronic and optoelectronic devices due to in-plane anisotropy, high mobility, and direct bandgap. However, BP devices face challenges due to their limited stability, photo-response speed, and detection range. To enhance BP with powerful electrical and optical performance, the BP heterostructures can be created. In this review, the state-of-the-art heterostructures and their electrical and optoelectronic applications based on black phosphorus are discussed. Five parts introduce the performance of BP-based devices, including black phosphorus sandwich structure by hBN with better stability and higher mobility, black phosphorus homojunction by dual-gate structure for optical applications, black phosphorus heterojunction with other 2D materials for faster photo-detection, black phosphorus heterojunction integration with 3D bulk material, and BP via As-doping tunable bandgap enabling photo-detection up to 8.2 μm. Finally, we discuss the challenges and prospects for BP electrical and optical devices and applications.

Key words: black phosphorus, photodetector, heterostructure, homojunction, 2D material



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Fig. 1.  (Color online) Overview of BP crystal structure and BP devices.

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Fig. 2.  (Color online) Black phosphorus sandwich structure integration with hBN and its band structure. (a) A 3D schematic of hBN/BP/hBN heterostructure. (b) The HSE06 calculation results of the band structure and the local density of states (LDOS) for the hBN/BP heterostructure. Modified with permission from Ref. [38] Copyright 2016 American Chemical Society, (b) Ref. [39] Copyright 2015 American Chemical Society.

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Fig. 3.  (Color online) Fabrication process and mobility of hBN/BP/hBN heterostructure devices. (a) A 3D schematic of hBN/BP/hBN heterostructure device fabrication process. (b) Mobility results of the different structures including BP/SiO2 (red), BP/hBN (green), and hBN/BP/hBN (blue). (c) Mobility results of the trilayer and 20-layer were measured at liquid helium temperatures. (d) Mobility as a function of temperature for different carrier densities were measured. (e) Quantum Hall states with filling factors from 2 to 12 are observed. (f) FET and Hall mobilities at different temperature. Modified with permission from (a) Ref. [30] Copyright Nature publishing group, (b) Ref. [45] Copyright AIP Publishing, (c) Ref. [46] Copyright 2015 American Chemical Society, (d) and (e) Ref. [47] Copyright 2016 American Chemical Society, (f) Ref. [48] Copyright 2018 American Chemical Society.

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Fig. 4.  (Color online) Drain current mapping and band diagrams of the few-layer black phosphorus PN junction. Drain current mapping at (a) + 100 mV and (b) –100 mV as a function of Vrg and VIg, respectively. (c) Schematic energy band diagrams of the different device configurations. Modified with permission from Ref. [65] Copyright 2014 Springer Nature.

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Fig. 5.  (Color online) Bandgap and structure of graphene/BP heterojunction. (a) The top and side views of schematics of BP (violet)/graphene (gray) heterojunction. (b) The HSE06 calculation results of the band structure are graphene, phosphorene and graphene/BP heterojunction, respectively. (c) Transfer characteristic curves for an encapsulated device by measuring under both vacuum and ambient conditions. The inset shows a nonencapsulated device test. (d) Transfer characteristic curves at ranging various temperatures from 300 to 30 K in 30 K steps. Modified with permission from (a) and (b) Ref. [82] Copyright Royal Society of Chemistry, (c) Ref. [61] Copyright 2015 American Chemical Society, (d) Ref. [64] Copyright 2016 American Chemical Society.

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Fig. 6.  (Color online) The photodetectors based on TMDCs/BP heterojunctions. (a) A 3D schematic of the BP/MoS2 heterojunction device. (b) On/off switching characteristics of the BP/MoS2 junction device under illumination of 1.55 μm laser (Laser power 96.2 μW) at different bias voltages. The rise time and the decay were 15 μs and 70 μs, respectively. (c) A 3D schematic of the WSe2/BP/MoS2 heterojunction device. (d) Photoresponsivity and photogain of the WSe2/BP/MoS2 heterojunction device as a function of wavelength, respectively. (e) A 3D schematic diagram of the ReS2/BP heterojunction device. (f) Current rectifying output characteristics as a function of incident laser power values under illumination of 532 nm laser. Modified with permission from (a) and (b) Ref. [74] Copyright 2016 American Chemical Society, (c) and (d) Ref. [75] Copyright 2017 American Chemical Society, (e) and (f) Ref. [76] Copyright 2019 American Chemical Society.

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Fig. 7.  (Color online) Structure and performance of the lateral and vertical BP/MoS2 heterostructures. (a) A 3D schematic of the BP/MoS2 heterojunction device. (b) The diode current (Id) as a function of the voltage across the diode at different thicknesses of BP which are 9, 36 and 61 nm, respectively. (c) A schematic diagram of the BP/MoS2 heterostructure device cross-section. (d) I–V characteristics of vertical and lateral BP/MoS2 heterojunction diodes. The inset shows semilogarithmic scale plot of the same I–V curves. Modified with permission from (a) and (b) Ref. [63] Copyright 2017 American Chemical Society, (c) and (d) Ref. [92] Copyright 2017 American Chemical Society.

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Fig. 8.  (Color online) Performance of BP/ 3D bulk material heterojunction device. (a) EQE as a function of laser power for different laser light wavelengths at zero source–drain bias based on BP/GaAs heterojunction. (b) Semi-log plot of the transfer characteristics of the JFET based on BP/β-Ga2O3 heterojunction. (c) The transfer characteristics of BP/InGaZnO JFET. The inset shows the corresponding µFE value. Modified with permission from (a) Ref. [94] Copyright AIP publishing, (b) Ref. [96] Copyright 2020 IOP, (c) Ref. [109] Copyright 2020 John Wiley and Sons.

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Fig. 9.  (Color online) Performance of the related b-AsP photodetectors. (a) Infrared absorption as a function of wavenumber for different samples including b-P, b-As0.25P0.75, b-As0.4P0.6 and b-As0.83P0.17, respectively. (b) Bandgap and wavelength as a function of different composition-tunable b-AsxP1−x or different polarization angle of the same composition, respectively. (c) Response curve as a function of time under illumination of 4.034 μm of the b-AsP photodetector. (d) Specific detectivity of different detectors as a function of wavelength including a thermistor bolometer, a PbSe detector, a b-AsP FET device and a b-AsP/MoS2 heterostructure. Modified with permission from (a) and (b) Ref. [95] Copyright John Wiley and Sons, (c) and (d) Ref. [97] Copyright AAAS.

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Table 1.   Comparison of performance of FETs based on BP and BP heterostructures, including BP film thickness, structure, mobility, on/off ratio.

Film thickness (nm)StructureMobility (cm2/(V·s))On/off ratioExperimental temperature (K)Ref.
10BP286104Room temperature[24]
10BP984105Room temperature[29]
1.9BP1722.7×104Room temperature[51]
5BP205105Room temperature[52]
15BP1000104120 K
18.7BP170.5102Room temperature[53]
8.5BP4002×103Room temperature[54]
15BP310103~104Room temperature[55]
5BP180104~105Room temperature
5BP155104Room temperature[56]
8hBN/BP/hBN1350105Room temperature[30]
2700/1.7 K
/hBN/BP/hBN5200/Room temperature[47]
/45000/2 K
11hBN/BP/hBN1432103Room temperature[48]
3388/77 K
10BP17102Room temperature[57]
5BP1495103260 K[58]
6.5BP(K-doped)262104Room temperature[59]
2.5BP(Al-doped)1055.6×103Room temperature[60]
4.5hBN/graphene/BP63100Room temperature[61]
30BP/MoS2/104Room temperature[62]
72BP/MoS2/105Room temperature[63]
10–15Graphene/BP/80030 K[64]
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Table 2.   Comparison of performance of photodetectors based on BP and BP-related heterostructures, including film thickness, structure, spectral range, responsivity, specific detectivity and response time.

Film thickness (nm)StructureSpectral rangeResponsivity (A/W)Specific detectivity (Jones)Response time (ms)Ref.
BP: 3–8BPVisible to near-infrared4.8 × 10–3 (640 nm)>103~1 [67]
BP: ~4.5BPNear-ultraviolet to near-infrared9 × 104 (405 nm)3 × 1013~1 [68]
BP: 8BPVisible to near-infrared4.3 × 106 (633 nm, 300 K)
7 × 106 (633 nm, 20 K)		/5 [69]
BP: ~12BP532 nm82//[70]
BP: 28, 47, 302BP830 nm2.421.833 × 1082.5 [71]
BP: ~22BP/MoS2633 nm0.418//[72]
BP: ~10, MoS2: ~4.8BP/MoS2532 nm~0.17//[73]
BP: ~22, MoS2: ~12BP/MoS2Visible to near-infrared22.3 (532 nm)
153.4 (1.55 μm)		3.1 × 1011 (532 nm)
2.13 × 109 (1.55 μm)		0.015
/		[74]
BP: 5, ReS2: 12BP/ReS2532 nm8//[75]
WSe2: ~43, BP: ~40, MoS2: ~34WSe2/BP/MoS2Visible to near-infrared6.32 (532 nm)
1.12 (1.55 μm)		1.25 × 1011 (532 nm)
2.21 × 1010 (1.55 μm)		/[76]
DownLoad: CSV
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    Received: 30 January 2021 Revised: 17 March 2021 Online: Accepted Manuscript: 21 April 2021Uncorrected proof: 22 April 2021Published: 01 August 2021

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      Article Navigation >  Journal of Semiconductors  > 2021  >  42(8): 081001
      Ningqin Deng, He Tian, Jian Zhang, Jinming Jian, Fan Wu, Yang Shen, Yi Yang, Tian-Ling Ren. Black phosphorus junctions and their electrical and optoelectronic applications[J]. Journal of Semiconductors, 2021, 42(8): 081001. doi: 10.1088/1674-4926/42/8/081001 ****N Q Deng, H Tian, J Zhang, J M Jian, F Wu, Y Shen, Y Yang, T L Ren, Black phosphorus junctions and their electrical and optoelectronic applications[J]. J. Semicond., 2021, 42(8): 081001. doi: 10.1088/1674-4926/42/8/081001.
      Citation:
      Ningqin Deng, He Tian, Jian Zhang, Jinming Jian, Fan Wu, Yang Shen, Yi Yang, Tian-Ling Ren. Black phosphorus junctions and their electrical and optoelectronic applications[J]. Journal of Semiconductors, 2021, 42(8): 081001. doi: 10.1088/1674-4926/42/8/081001 ****
      N Q Deng, H Tian, J Zhang, J M Jian, F Wu, Y Shen, Y Yang, T L Ren, Black phosphorus junctions and their electrical and optoelectronic applications[J]. J. Semicond., 2021, 42(8): 081001. doi: 10.1088/1674-4926/42/8/081001.
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      Black phosphorus junctions and their electrical and optoelectronic applications

      DOI: 10.1088/1674-4926/42/8/081001
      • 1.

        Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • 2.

        Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

      • 3.

        National Institute of Metrology (NIM), Beijing 100029, China

      More Information
      • Ningqin Deng：received his M.D. from Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, China, in 2013, and Ph.D. in Department of Micro&Nano Electronics, Tsinghua University, China, in 2019. In 2019, he was awarded “Outstanding Graduates of Beijing”. His research focuses on development and application of novel 2D-material-based electronic devices
      • He Tian：received the Ph.D. degree from the Institute of Microelectronics, Tsinghua University, in 2015. He is currently an associate professor in Tsinghua University. He was a recipient of the National Science Foundation for outstanding young scholars. He has co-authored over 100 papers and has over 4500 citations. He has been researching on various 2D material-based novel nanodevices
      • Tian-Ling Ren：received the Ph.D. degree in solid-state physics from the Department of Modern Applied Physics, Tsinghua University, Beijing, China, in 1997, where he has been a Full Professor with the Institute of Microelectronics since 2003. He was a recipient of the National Science Foundation for distinguished young scholars and Changjiang distinguished professor. His main research interests include 2D-material-based devices and novel nanoelectronic devices, intelligent sensors and integrated micro-electromechanical systems, and critical technology for advanced micro-and nano-electronics
      • Corresponding author: tianhe88@tsinghua.edu.cn; RenTL@tsinghua.edu.cn
      • Received Date: 2021-01-30
      • Revised Date: 2021-03-17
      • Published Date: 2021-08-10

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