Impact of switching frequencies on the TID response of SiC power MOSFETs

Sheng Yang; Xiaowen Liang; Jiangwei Cui; Qiwen Zheng; Jing Sun; Mohan Liu; Dang Zhang; Haonan Feng; Xuefeng Yu; Chuanfeng Xiang; Yudong Li; Qi Guo

doi:10.1088/1674-4926/42/8/082802

J. Semicond. > 2021, Volume 42 > Issue 8 > 082802

ARTICLES

Impact of switching frequencies on the TID response of SiC power MOSFETs

Sheng Yang^{1, 2, 3}, Xiaowen Liang^{1, 2, 3}, Jiangwei Cui^{1, 2}, Qiwen Zheng^{1, 2}, Jing Sun^{1, 2}, Mohan Liu^{1, 2}, Dang Zhang^{1, 2}, Haonan Feng^{1, 2, 3}, Xuefeng Yu^{1, 2,}, Chuanfeng Xiang^{1, 2}, Yudong Li^{1, 2} and Qi Guo^{1, 2}

+ Author Affiliations

Corresponding author: Xuefeng Yu, yuxf@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/42/8/082802

Abstract: Different switching frequencies are required when SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are switching in a space environment. In this study, the total ionizing dose (TID) responses of SiC power MOSFETs are investigated under different switching frequencies from 1 kHz to 10 MHz. A significant shift was observed in the threshold voltage as the frequency increased, which resulted in premature failure of the drain–source breakdown voltage and drain–source leakage current. The degradation is attributed to the high activation and low recovery rates of traps at high frequencies. The results of this study suggest that a targeted TID irradiation test evaluation method can be developed according to the actual switching frequency of SiC power MOSFETs.

Key words: SiC power MOSFET, switching frequency, oxide trap, total ionizing dose, transistor, semiconductor theory

References

[1]	She X, Huang A Q, Lucía Ó, et al. Review of silicon carbide power devices and their applications. IEEE Trans Ind Electron, 2017, 64, 8193 doi: 10.1109/TIE.2017.2652401
[2]	Akturk A, McGarrity J M, Potbhare S, et al. Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs. IEEE Trans Nucl Sci, 2012, 59, 3258 doi: 10.1109/TNS.2012.2223763
[3]	Chen W, Yang H L, Guo X Q, et al. The research status and challenge of space radiation physics and application. Chin Sci Bull, 2017, 62, 978 doi: 10.1360/N972016-00438
[4]	Zhang T, Allard B, Bi J. The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectron Reliab, 2018, 88–90, 631 doi: 10.1016/j.microrel.2018.06.046
[5]	Takeyama A, Matsuda T, Yokoseki T, et al. Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions. Jpn J Appl Phys, 2016, 55, 104101 doi: 10.7567/JJAP.55.104101
[6]	Zhang C X, Shen X, Zhang E, et al. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. IEEE Trans Electron Devices, 2013, 60, 2361 doi: 10.1109/TED.2013.2263426
[7]	Liang X W, Cui J W, Zheng Q W, et al. Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET. Radiat Eff Defects Solids, 2020, 175, 559 doi: 10.1080/10420150.2019.1704757
[8]	Hu D Q, Zhang J W, Jia Y P, et al. Impact of different gate biases on irradiation and annealing responses of SiC MOSFETs. IEEE Trans Electron Devices, 2018, 65, 3719 doi: 10.1109/TED.2018.2858289
[9]	Takeyama A, Makino T, Okubo S, et al. Radiation response of negative gate biased SiC MOSFETs. Materials, 2019, 12, 2741 doi: 10.3390/ma12172741
[10]	Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. Radiation effects in MOS oxides. IEEE Trans Nucl Sci, 2008, 55, 1833 doi: 10.1109/TNS.2008.2001040
[11]	Zhang C X, Zhang E, Fleetwood D M, et al. Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices. IEEE Trans Nucl Sci, 2011, 58, 2925 doi: 10.1109/TNS.2011.2168424
[12]	Todorovic M H, et al. SiC MW solar inverter. Proc Int Exhib Conf Power Electron Intell Motion Renewable Energy Manage Eur, 2016, 645
[13]	Fujii K, Noto Y, Oshima M, et al. 1-MW solar power inverter with boost converter using all SiC power module. 2015 17th European Conference on Power Electronics and Applications, 2015, 1
[14]	Yu D R, Qiao L, Jiang W J, et al. Development and prospect of electric propulsion technology in China. J Propul Technol, 2020, 41, 1
[15]	Yuan X B, Laird I, Walder S. Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters. IEEE Trans Power Electron, 2021, 36, 3925 doi: 10.1109/TPEL.2020.3024862
[16]	Kobayashi Y, Yokozeki T, Matsuda T, et al. Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs. Mater Sci Forum, 2016, 858, 868 doi: 10.4028/www.scientific.net/MSF.858.868
[17]	Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices. IEEE Trans Nucl Sci, 2003, 50, 483 doi: 10.1109/TNS.2003.812927
[18]	Lelis A J, Oldham T R, Boesch H E, et al. The nature of the trapped hole annealing process. IEEE Trans Nucl Sci, 1989, 36, 1808 doi: 10.1109/23.45373
[19]	Lelis A J, Green R, Habersat D B, et al. Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs. IEEE Trans Electron Devices, 2015, 62, 316 doi: 10.1109/TED.2014.2356172
[20]	Fiorenza P, Frazzetto A, Guarnera A, et al. Fowler-Nordheim tunneling at SiO₂/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors. Appl Phys Lett, 2014, 105, 142108 doi: 10.1063/1.4898009

Fig. 1. Potential application examples using SiC devices at various voltage and frequency levels^[15].

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) SiC power MOSFET. (a) Variation in threshold voltage with the total ionizing dose at ON, OFF, and different frequencies. (b) Relation between the change in threshold voltage and applied switching frequency under the same total ionizing dose.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) SiC power MOSFETs at ON, OFF, and different frequencies. (a) Variation in drain–source leakage current with the total ionizing dose. (b) Change in breakdown voltage with the total ionizing dose.

DownLoad: Full-Size Img PowerPoint

Fig. 4. A model hole trapping [(a) to (b)] and detrapping [(c) to (a)] processes are indicated, along with the intermediate compensation/reverse-annealing phenomenon [(b) to (c) and (c) to (b)]^[18].

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Comparison of threshold voltage of SiC Power MOSFETs with the total ionizing dose under 15 and 0 V segment gate bias, constant 0 V gate bias, and constant 15 V gate bias.

DownLoad: Full-Size Img PowerPoint

[1]	She X, Huang A Q, Lucía Ó, et al. Review of silicon carbide power devices and their applications. IEEE Trans Ind Electron, 2017, 64, 8193 doi: 10.1109/TIE.2017.2652401
[2]	Akturk A, McGarrity J M, Potbhare S, et al. Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs. IEEE Trans Nucl Sci, 2012, 59, 3258 doi: 10.1109/TNS.2012.2223763
[3]	Chen W, Yang H L, Guo X Q, et al. The research status and challenge of space radiation physics and application. Chin Sci Bull, 2017, 62, 978 doi: 10.1360/N972016-00438
[4]	Zhang T, Allard B, Bi J. The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectron Reliab, 2018, 88–90, 631 doi: 10.1016/j.microrel.2018.06.046
[5]	Takeyama A, Matsuda T, Yokoseki T, et al. Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions. Jpn J Appl Phys, 2016, 55, 104101 doi: 10.7567/JJAP.55.104101
[6]	Zhang C X, Shen X, Zhang E, et al. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. IEEE Trans Electron Devices, 2013, 60, 2361 doi: 10.1109/TED.2013.2263426
[7]	Liang X W, Cui J W, Zheng Q W, et al. Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET. Radiat Eff Defects Solids, 2020, 175, 559 doi: 10.1080/10420150.2019.1704757
[8]	Hu D Q, Zhang J W, Jia Y P, et al. Impact of different gate biases on irradiation and annealing responses of SiC MOSFETs. IEEE Trans Electron Devices, 2018, 65, 3719 doi: 10.1109/TED.2018.2858289
[9]	Takeyama A, Makino T, Okubo S, et al. Radiation response of negative gate biased SiC MOSFETs. Materials, 2019, 12, 2741 doi: 10.3390/ma12172741
[10]	Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. Radiation effects in MOS oxides. IEEE Trans Nucl Sci, 2008, 55, 1833 doi: 10.1109/TNS.2008.2001040
[11]	Zhang C X, Zhang E, Fleetwood D M, et al. Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices. IEEE Trans Nucl Sci, 2011, 58, 2925 doi: 10.1109/TNS.2011.2168424
[12]	Todorovic M H, et al. SiC MW solar inverter. Proc Int Exhib Conf Power Electron Intell Motion Renewable Energy Manage Eur, 2016, 645
[13]	Fujii K, Noto Y, Oshima M, et al. 1-MW solar power inverter with boost converter using all SiC power module. 2015 17th European Conference on Power Electronics and Applications, 2015, 1
[14]	Yu D R, Qiao L, Jiang W J, et al. Development and prospect of electric propulsion technology in China. J Propul Technol, 2020, 41, 1
[15]	Yuan X B, Laird I, Walder S. Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters. IEEE Trans Power Electron, 2021, 36, 3925 doi: 10.1109/TPEL.2020.3024862
[16]	Kobayashi Y, Yokozeki T, Matsuda T, et al. Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs. Mater Sci Forum, 2016, 858, 868 doi: 10.4028/www.scientific.net/MSF.858.868
[17]	Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices. IEEE Trans Nucl Sci, 2003, 50, 483 doi: 10.1109/TNS.2003.812927
[18]	Lelis A J, Oldham T R, Boesch H E, et al. The nature of the trapped hole annealing process. IEEE Trans Nucl Sci, 1989, 36, 1808 doi: 10.1109/23.45373
[19]	Lelis A J, Green R, Habersat D B, et al. Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs. IEEE Trans Electron Devices, 2015, 62, 316 doi: 10.1109/TED.2014.2356172
[20]	Fiorenza P, Frazzetto A, Guarnera A, et al. Fowler-Nordheim tunneling at SiO₂/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors. Appl Phys Lett, 2014, 105, 142108 doi: 10.1063/1.4898009

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Received: 08 February 2021 Revised: 19 April 2021 Online: Accepted Manuscript: 23 April 2021Uncorrected proof: 25 April 2021Published: 01 August 2021

Article Navigation > Journal of Semiconductors > 2021 > 42(8): 082802

Sheng Yang, Xiaowen Liang, Jiangwei Cui, Qiwen Zheng, Jing Sun, Mohan Liu, Dang Zhang, Haonan Feng, Xuefeng Yu, Chuanfeng Xiang, Yudong Li, Qi Guo. Impact of switching frequencies on the TID response of SiC power MOSFETs[J]. Journal of Semiconductors, 2021, 42(8): 082802. doi: 10.1088/1674-4926/42/8/082802 ****S Yang, X W Liang, J W Cui, Q W Zheng, J Sun, M H Liu, D Zhang, H N Feng, X F Yu, C F Xiang, Y D Li, Q Guo, Impact of switching frequencies on the TID response of SiC power MOSFETs[J]. J. Semicond., 2021, 42(8): 082802. doi: 10.1088/1674-4926/42/8/082802.

Citation:

S Yang, X W Liang, J W Cui, Q W Zheng, J Sun, M H Liu, D Zhang, H N Feng, X F Yu, C F Xiang, Y D Li, Q Guo, Impact of switching frequencies on the TID response of SiC power MOSFETs[J]. J. Semicond., 2021, 42(8): 082802. doi: 10.1088/1674-4926/42/8/082802.

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Impact of switching frequencies on the TID response of SiC power MOSFETs

DOI: 10.1088/1674-4926/42/8/082802

Sheng Yang^1,2,3,
Xiaowen Liang^1,2,3,
Jiangwei Cui^1,2,
Qiwen Zheng^1,2,
Jing Sun^1,2,
Mohan Liu^1,2,
Dang Zhang^1,2,
Haonan Feng^1,2,3,
Xuefeng Yu^1,2,,
Chuanfeng Xiang^1,2,
Yudong Li^1,2,
Qi Guo^1,2

1.
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.
Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
3.
University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Sheng Yang：received the B.S. degree in Physics from Hubei University, Wuhan, China, in 2018. He is working toward the M.S. degree in Physical Electronics from Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China. His research interests include the radiation effect, simulation and reliability of silicon carbide power devices
Xuefeng Yu：received the B.S. degree in Applied Physics from Lanzhou University, Lanzhou, China in 1986. Since 2008, he has been a professor in the Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences. He received the approval notice of funding for the Leading Talents Research and Training Program of the 2019 Innovative Talents Training Program and went to Belgium for training and research. His research interests include damage mechanism and reliability of electronic devices in radiation environment
Corresponding author: yuxf@ms.xjb.ac.cn
Received Date: 2021-02-08
Revised Date: 2021-04-19
Published Date: 2021-08-10

Abstract

Abstract

Different switching frequencies are required when SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are switching in a space environment. In this study, the total ionizing dose (TID) responses of SiC power MOSFETs are investigated under different switching frequencies from 1 kHz to 10 MHz. A significant shift was observed in the threshold voltage as the frequency increased, which resulted in premature failure of the drain–source breakdown voltage and drain–source leakage current. The degradation is attributed to the high activation and low recovery rates of traps at high frequencies. The results of this study suggest that a targeted TID irradiation test evaluation method can be developed according to the actual switching frequency of SiC power MOSFETs.
- SiC power MOSFET,
- switching frequency,
- oxide trap,
- total ionizing dose,
- transistor,
- semiconductor theory

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References(20)

References

[1]	She X, Huang A Q, Lucía Ó, et al. Review of silicon carbide power devices and their applications. IEEE Trans Ind Electron, 2017, 64, 8193 doi: 10.1109/TIE.2017.2652401
[2]	Akturk A, McGarrity J M, Potbhare S, et al. Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs. IEEE Trans Nucl Sci, 2012, 59, 3258 doi: 10.1109/TNS.2012.2223763
[3]	Chen W, Yang H L, Guo X Q, et al. The research status and challenge of space radiation physics and application. Chin Sci Bull, 2017, 62, 978 doi: 10.1360/N972016-00438
[4]	Zhang T, Allard B, Bi J. The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectron Reliab, 2018, 88–90, 631 doi: 10.1016/j.microrel.2018.06.046
[5]	Takeyama A, Matsuda T, Yokoseki T, et al. Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions. Jpn J Appl Phys, 2016, 55, 104101 doi: 10.7567/JJAP.55.104101
[6]	Zhang C X, Shen X, Zhang E, et al. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. IEEE Trans Electron Devices, 2013, 60, 2361 doi: 10.1109/TED.2013.2263426
[7]	Liang X W, Cui J W, Zheng Q W, et al. Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET. Radiat Eff Defects Solids, 2020, 175, 559 doi: 10.1080/10420150.2019.1704757
[8]	Hu D Q, Zhang J W, Jia Y P, et al. Impact of different gate biases on irradiation and annealing responses of SiC MOSFETs. IEEE Trans Electron Devices, 2018, 65, 3719 doi: 10.1109/TED.2018.2858289
[9]	Takeyama A, Makino T, Okubo S, et al. Radiation response of negative gate biased SiC MOSFETs. Materials, 2019, 12, 2741 doi: 10.3390/ma12172741
[10]	Schwank J R, Shaneyfelt M R, Fleetwood D M, et al. Radiation effects in MOS oxides. IEEE Trans Nucl Sci, 2008, 55, 1833 doi: 10.1109/TNS.2008.2001040
[11]	Zhang C X, Zhang E, Fleetwood D M, et al. Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices. IEEE Trans Nucl Sci, 2011, 58, 2925 doi: 10.1109/TNS.2011.2168424
[12]	Todorovic M H, et al. SiC MW solar inverter. Proc Int Exhib Conf Power Electron Intell Motion Renewable Energy Manage Eur, 2016, 645
[13]	Fujii K, Noto Y, Oshima M, et al. 1-MW solar power inverter with boost converter using all SiC power module. 2015 17th European Conference on Power Electronics and Applications, 2015, 1
[14]	Yu D R, Qiao L, Jiang W J, et al. Development and prospect of electric propulsion technology in China. J Propul Technol, 2020, 41, 1
[15]	Yuan X B, Laird I, Walder S. Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters. IEEE Trans Power Electron, 2021, 36, 3925 doi: 10.1109/TPEL.2020.3024862
[16]	Kobayashi Y, Yokozeki T, Matsuda T, et al. Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs. Mater Sci Forum, 2016, 858, 868 doi: 10.4028/www.scientific.net/MSF.858.868
[17]	Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices. IEEE Trans Nucl Sci, 2003, 50, 483 doi: 10.1109/TNS.2003.812927
[18]	Lelis A J, Oldham T R, Boesch H E, et al. The nature of the trapped hole annealing process. IEEE Trans Nucl Sci, 1989, 36, 1808 doi: 10.1109/23.45373
[19]	Lelis A J, Green R, Habersat D B, et al. Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs. IEEE Trans Electron Devices, 2015, 62, 316 doi: 10.1109/TED.2014.2356172
[20]	Fiorenza P, Frazzetto A, Guarnera A, et al. Fowler-Nordheim tunneling at SiO₂/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors. Appl Phys Lett, 2014, 105, 142108 doi: 10.1063/1.4898009

Impact of switching frequencies on the TID response of SiC power MOSFETs

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