Polarization sensitive photodetector based on quasi-1D ZrSe<sub>3</sub>

Xingang Wang; Tao Xiong; Kaiyao Xin; Juehan Yang; Yueyang Liu; Zeping Zhao; Jianguo Liu; Zhongming Wei

doi:10.1088/1674-4926/43/10/102001

J. Semicond. > 2022, Volume 43 > Issue 10 > 102001, doi: 10.1088/1674-4926/43/10/102001

ARTICLES

Polarization sensitive photodetector based on quasi-1D ZrSe₃

Xingang Wang^{1, 4}, Tao Xiong², Kaiyao Xin^{2, 3}, Juehan Yang², Yueyang Liu², Zeping Zhao^1,, Jianguo Liu^1, and Zhongming Wei^{2, 3,}

+ Author Affiliations

1. The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3. Sino-Danish Center for Education and Research, Sino-Danish College University of Chinese Academy of Sciences, Beijing 100049, China
4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Author Bio:

received his B.S. degree in 2018 from Qingdao University. He is currently a Ph.D. candidate in physical electronics from the Institute of Semiconductors, Chinese Academacy of Sciences (CAS), Beijing China, under the supervision of Prof. Jianguo Liu. His research focuses on the electronic, photoelectric properties of 2D layered materials and high sensitivity photodetector devices.

got her B.S. degree from Hebei University of Technology, Tianjin, China, in 2014, and received a Ph.D. degree in physical electronics from the Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing, China, in 2019. Now she is working for the Institute of Semiconductors, CAS. She has published more than 20 articles in scientific journals. Her study interests focus on high-frequency photodetector devices, optical fiber communication systems technology, high-speed microwave package design, and array hybrid integration.

got his B.S. degree in Inner Mongolia Normal University, Inner Mongolia, China, in 1998, received a master’s degree from the Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Anhui, China, in 2004, and got his Ph.D. degree from Nankai University, Tianjin, China, 2007. He worked at Northwestern University as a postdoctoral fellow, America, from 2010 to 2011. Now he is a research fellow of the Institute of Semiconductors, CAS. And he is also a professor of CAS. He has published more than 100 articles in scientific journals and got 67 patents for invention. His research focuses on applied optics. Dr. Liu received the funding of the National Science Fund for Outstanding Youth in 2017.

received his B.S. from Wuhan University (China) in 2005, and Ph.D. from the Institute of Chemistry, Chinese Academy of Sciences in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor in Prof. Thomas Bjørnholm's group at University of Copenhagen, Denmark. Currently, he is working as a Professor at the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their optoelectronic devices.

Corresponding author: Zeping Zhao, zzp@semi.ac.cn; Jianguo Liu, Jgliu@semi.ac.cn; Zhongming Wei, zmwei@semi.ac.cn

Abstract: The in-plane anisotropy of transition metal trichalcogenides (MX₃) has a significant impact on the molding of materials and MX₃ is a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional (1D) semiconductors, ZrSe₃, are systematically investigated through experiments and theoretical studies. The ZrSe₃-based photodetector shows impressive wide spectral response from ultraviolet (UV) to near infrared (NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^-1 and detectivity of ~10⁶ at 532 nm. Moreover, the dichroic ratio of ZrSe₃-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSe₃ has potential in optoelectronic applications and polarization detectors.

Key words: quasi-1D, ZrSe₃, polarization-sensitive

References

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[29]	Osada K, Bae S, Tanaka M, et al. Phonon properties of few-layer crystals of quasi-one-dimensional ZrS₃ and ZrSe₃. J Phys Chem C, 2016, 120, 4653 doi: 10.1021/acs.jpcc.5b12441
[30]	Yu X, Wen X K, Zhang W F, et al. Fast and controlled growth of two-dimensional layered ZrTe₃ nanoribbons by chemical vapor deposition. CrystEngComm, 2019, 21, 5586 doi: 10.1039/C9CE00793H
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[32]	Wu J X, Mao N N, Xie L M, et al. Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew Chem Int Ed, 2015, 54, 2366 doi: 10.1002/anie.201410108
[33]	Heyd J, Scuseria G E, Ernzerhof M. Hybrid functionals based on a screened Coulomb potential. J Chem Phys, 2003, 118, 8207 doi: 10.1063/1.1564060
[34]	Perdew J P, Burke K, Wang Y. Generalized gradient approximation for the exchange-correlation hole of a many-electron system. Phys Rev B, 1996, 54, 16533 doi: 10.1103/PhysRevB.54.16533
[35]	Perdew J P, Burke K, Ernzerhof M. Generalized gradient approximation made simple. Phys Rev Lett, 1996, 77, 3865 doi: 10.1103/PhysRevLett.77.3865
[36]	Monkhorst H J, Pack J D. Special points for Brillouin-zone integrations. Phys Rev B, 1976, 13, 5188 doi: 10.1103/PhysRevB.13.5188
[37]	Saha S, Sinha T P, Mookerjee A. Electronic structure, chemical bonding, and optical properties of paraelectric BaTiO₃. Phys Rev B, 2000, 62, 8828 doi: 10.1103/PhysRevB.62.8828
[38]	Zhao K, Yang J H, Zhong M Z, et al. Direct polarimetric image sensor and wide spectral response based on quasi-1D Sb₂S₃ nanowire. Adv Funct Mater, 2021, 31, 2006601 doi: 10.1002/adfm.202006601
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Fig. 1. (Color online) Characterization of ZrSe₃ crystal. (a) Low-magnification transmission electron microscopy (TEM) of the quasi-1D ZrSe₃. (b) High-resolution transmission electron microscopy (HRTEM) image of the quasi-1D ZrSe₃. (c) Selected area electron diffraction (SAED) pattern of the quasi-1D ZrSe. (d) The AFM image of ZrSe₃ crystal. (e) High-resolution spectra of Zr 3d core level. (f) High-resolution spectra of Se 3d core level.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Raman spectra under unpolarized and polarized laser (532 nm). (b) Counter maps of angle-resolved Raman spectra under cross configuration. (c) Counter maps of angle-resolved Raman spectra under parallel configuration. (d) Polar plots of angle-resolved and fitted peak intensities of 234.6 cm⁻¹. (e) Polar plots of angle-resolved and fitted peak intensities of 301.4 cm⁻¹.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Atomic structure of ZrSe₃ crystal. (b) Band structure of layered ZrSe₃. (c) Calculated real parts and imaginary parts of the dielectric constant along a-axis and b-axis. (d) The R_a and R_b of optical transition |v> → |c> along the k-points path. (e, f) Partial charge density of ZrSe₃ at the state of CBM and VBM respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Time-resolved photoresponse of the ZrSe₃-based photodetector for a bias voltage of 5 V under 532 nm with different light power density. (b) Dependence of the photocurrent on the intensity of incident laser power. (c) The spectral responsivity and detectivity of ZrSe₃-based photodetector. (d) Evolution of the photocurrent with a polarized angle under 532 nm.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a−c) Time-resolved photoresponse of the ZrSe₃-based photodetector for a bias voltage of 5 V under 450, 638 and 808 nm with different light power density respectively. (d–f) Evolution of the photocurrent with polarized angles under 450, 638 and 808 nm, respectively.

DownLoad: Full-Size Img PowerPoint

Table 1. Summary of the performance of a device based on quasi-1D ZrSe₃.

Wavelength (nm)	Optical power density (mW/cm²)	Responsivity (mA/W)	I_max/I_min
360	150	4.8	–
450	150	6.2	1.02
532	150	11.9	1.03
638	150	11.3	1.02
808	150	1.6	1.1

DownLoad: CSV

[1]	Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS₂ transistors. Nat Nanotechnol, 2011, 6, 147 doi: 10.1038/nnano.2010.279
[2]	Patra A, Rout C S. Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: Synthesis, properties and applications. RSC Adv, 2020, 10, 36413 doi: 10.1039/D0RA07160A
[3]	Cui Q N, Lipatov A, Wilt J S, et al. Time-resolved measurements of photocarrier dynamics in TiS₃ nanoribbons. ACS Appl Mater Interfaces, 2016, 8, 18334 doi: 10.1021/acsami.6b04092
[4]	Ferrer I J, Ares J R, Clamagirand J M, et al. Optical properties of titanium trisulphide (TiS₃) thin films. Thin Solid Films, 2013, 535, 398 doi: 10.1016/j.tsf.2012.10.033
[5]	Ferrer I J, Maciá M D, Carcelén V, et al. On the photoelectrochemical properties of TiS₃ films. Energy Procedia, 2012, 22, 48 doi: 10.1016/j.egypro.2012.05.219
[6]	Gilbert S J, Lipatov A, Yost A J, et al. The electronic properties of Au and Pt metal contacts on quasi-one-dimensional layered TiS₃(001). Appl Phys Lett, 2019, 114, 101604 doi: 10.1063/1.5090270
[7]	Island J O, Buscema M, Barawi M, et al. Ultrahigh photoresponse of few-layer TiS₃ nanoribbon transistors. Adv Opt Mater, 2014, 2, 641 doi: 10.1002/adom.201400043
[8]	Papadopoulos N, Frisenda R, Biele R, et al. Large birefringence and linear dichroism in TiS₃ nanosheets. Nanoscale, 2018, 10, 12424 doi: 10.1039/C8NR03616K
[9]	Pant A, Torun E, Chen B, et al. Strong dichroic emission in the pseudo one dimensional material ZrS₃. Nanoscale, 2016, 8, 16259 doi: 10.1039/C6NR05238J
[10]	Xiao Y, Zhou M Y, Liu J L, et al. Phase engineering of two-dimensional transition metal dichalcogenides. Sci China Mater, 2019, 62, 759 doi: 10.1007/s40843-018-9398-1
[11]	Huang H, Gao M, Wang J H, et al. Intercalator-assisted plasma-liquid technology: An efficient exfoliation method for few-layer two-dimensional materials. Sci China Mater, 2020, 63, 2079 doi: 10.1007/s40843-020-1416-0
[12]	Huang Y L, Chen W, Wee A T S. Two-dimensional magnetic transition metal chalcogenides. SmartMat, 2021, 2, 139 doi: 10.1002/smm2.1031
[13]	Zhang Z C, Zhao B, Shen D Y, et al. Synthesis of ultrathin 2D nonlayered α-MnSe nanosheets, MnSe/WS₂ heterojunction for high-performance photodetectors. Small Struct, 2021, 2, 2100028 doi: 10.1002/sstr.202100028
[14]	Han X, Xu Z S, Wu W Q, et al. Recent progress in optoelectronic synapses for artificial visual-perception system. Small Struct, 2020, 1, 2000029 doi: 10.1002/sstr.202000029
[15]	Tian X Y, Liu Y S. Van der Waals heterojunction ReSe₂/WSe₂ polarization-resolved photodetector. J Semicond, 2021, 42, 032001 doi: 10.1088/1674-4926/42/3/032001
[16]	Fang H H, Hu W D. Hybrid heterojunctions based on 2D materials and 3D thin-films for high-performance photodetectors. Sci China Phys Mech Astron, 2017, 60, 027031 doi: 10.1007/s11433-016-0402-y
[17]	Iyikanat F, Senger R T, Peeters F M, et al. Quantum-transport characteristics of a p-n junction on single-layer TiS₃. Chemphyschem, 2016, 17, 3985 doi: 10.1002/cphc.201600751
[18]	Sun R, Gu Y, Yang G F, et al. Theoretical study on the interfacial properties of monolayer TiS₃-metal contacts for electronic device applications. J Phys Chem C, 2019, 123, 7390 doi: 10.1021/acs.jpcc.8b08946
[19]	Kang J, Wang L W. Robust band gap of TiS₃ nanofilms. Phys Chem Chem Phys, 2016, 18, 14805 doi: 10.1039/C6CP01125J
[20]	Liu S J, Xiao W B, Zhong M Z, et al. Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS₃). Nanotechnology, 2018, 29, 184002 doi: 10.1088/1361-6528/aaafa2
[21]	Wang X T, Wu K D, Blei M, et al. Highly polarized photoelectrical response in vdW ZrS₃ nanoribbons. Adv Electron Mater, 2019, 5, 1900419 doi: 10.1002/aelm.201900419
[22]	Li L, Xiong D Y, Wen J, et al. A surface plasmonic coupled mid-long-infrared two-color quantum cascade detector. Infrared Phys Technol, 2016, 79, 45 doi: 10.1016/j.infrared.2016.09.010
[23]	Gao J, Zheng Y, Yu W, et al. Intrinsic polarization coupling in 2D α-In₂Se₃ toward artificial synapse with multimode operations. SmartMat, 2021, 2, 88 doi: 10.1002/smm2.1020
[24]	Zhou Z Q, Cui Y, Tan P H, et al. Optical and electrical properties of two-dimensional anisotropic materials. J Semicond, 2019, 40, 061001 doi: 10.1088/1674-4926/40/6/061001
[25]	Fang J Z, Zhou Z Q, Xiao M Q, et al. Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors. InfoMat, 2020, 2, 291 doi: 10.1002/inf2.12067
[26]	Long M S, Gao A Y, Wang P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci Adv, 2017, 3, e1700589 doi: 10.1126/sciadv.1700589
[27]	Zhou Z Q, Long M S, Pan L F, et al. Perpendicular optical reversal of the linear dichroism and polarized photodetection in 2D GeAs. ACS Nano, 2018, 12, 12416 doi: 10.1021/acsnano.8b06629
[28]	Wang X T, Li Y T, Huang L, et al. Short-wave near-infrared linear dichroism of two-dimensional germanium selenide. J Am Chem Soc, 2017, 139, 14976 doi: 10.1021/jacs.7b06314
[29]	Osada K, Bae S, Tanaka M, et al. Phonon properties of few-layer crystals of quasi-one-dimensional ZrS₃ and ZrSe₃. J Phys Chem C, 2016, 120, 4653 doi: 10.1021/acs.jpcc.5b12441
[30]	Yu X, Wen X K, Zhang W F, et al. Fast and controlled growth of two-dimensional layered ZrTe₃ nanoribbons by chemical vapor deposition. CrystEngComm, 2019, 21, 5586 doi: 10.1039/C9CE00793H
[31]	Li J, Peng J, Zhang S, et al. Anisotropic multichain nature and filamentary superconductivity in the charge density wave system HfTe₃. Phys Rev B, 2017, 96, 174510 doi: 10.1103/PhysRevB.96.174510
[32]	Wu J X, Mao N N, Xie L M, et al. Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew Chem Int Ed, 2015, 54, 2366 doi: 10.1002/anie.201410108
[33]	Heyd J, Scuseria G E, Ernzerhof M. Hybrid functionals based on a screened Coulomb potential. J Chem Phys, 2003, 118, 8207 doi: 10.1063/1.1564060
[34]	Perdew J P, Burke K, Wang Y. Generalized gradient approximation for the exchange-correlation hole of a many-electron system. Phys Rev B, 1996, 54, 16533 doi: 10.1103/PhysRevB.54.16533
[35]	Perdew J P, Burke K, Ernzerhof M. Generalized gradient approximation made simple. Phys Rev Lett, 1996, 77, 3865 doi: 10.1103/PhysRevLett.77.3865
[36]	Monkhorst H J, Pack J D. Special points for Brillouin-zone integrations. Phys Rev B, 1976, 13, 5188 doi: 10.1103/PhysRevB.13.5188
[37]	Saha S, Sinha T P, Mookerjee A. Electronic structure, chemical bonding, and optical properties of paraelectric BaTiO₃. Phys Rev B, 2000, 62, 8828 doi: 10.1103/PhysRevB.62.8828
[38]	Zhao K, Yang J H, Zhong M Z, et al. Direct polarimetric image sensor and wide spectral response based on quasi-1D Sb₂S₃ nanowire. Adv Funct Mater, 2021, 31, 2006601 doi: 10.1002/adfm.202006601
[39]	Hou S J, Guo Z F, Yang J H, et al. Birefringence and dichroism in quasi-1D transition metal trichalcogenides: Direct experimental investigation. Small, 2021, 17, e2100457 doi: 10.1002/smll.202100457
[40]	Yang H, Pan L F, Wang X T, et al. Mixed-valence-driven quasi-1D Sn^IISn^IVS₃ with highly polarization-sensitive UV-vis-NIR photoresponse. Adv Funct Mater, 2019, 29, 1904416 doi: 10.1002/adfm.201904416
[41]	Xiao M Q, Yang H, Shen W F, et al. Polarization-sensitive photodetectors: Symmetry-reduction enhanced polarization-sensitive photodetection in core-shell SbI₃/Sb₂O₃ van der Waals heterostructure. Small, 2020, 16, 2070036 doi: 10.1002/smll.202070036

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Received: 28 April 2022 Revised: 09 May 2022 Online: Accepted Manuscript: 29 June 2022Uncorrected proof: 30 June 2022Published: 01 October 2022

Article Navigation > Journal of Semiconductors > 2022 > 43(10): 102001

Xingang Wang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, Zhongming Wei. Polarization sensitive photodetector based on quasi-1D ZrSe3[J]. Journal of Semiconductors, 2022, 43(10): 102001. doi: 10.1088/1674-4926/43/10/102001 ****Xingang Wang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, Zhongming Wei. 2022: Polarization sensitive photodetector based on quasi-1D ZrSe3. Journal of Semiconductors, 43(10): 102001. doi: 10.1088/1674-4926/43/10/102001

Citation:

Xingang Wang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, Zhongming Wei. Polarization sensitive photodetector based on quasi-1D ZrSe₃[J]. Journal of Semiconductors, 2022, 43(10): 102001. doi: 10.1088/1674-4926/43/10/102001 ****

Xingang Wang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, Zhongming Wei. 2022: Polarization sensitive photodetector based on quasi-1D ZrSe₃. Journal of Semiconductors, 43(10): 102001. doi: 10.1088/1674-4926/43/10/102001

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Polarization sensitive photodetector based on quasi-1D ZrSe₃

doi: 10.1088/1674-4926/43/10/102001

1.
The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3.
Sino-Danish Center for Education and Research, Sino-Danish College University of Chinese Academy of Sciences, Beijing 100049, China
4.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Xingang Wang：received his B.S. degree in 2018 from Qingdao University. He is currently a Ph.D. candidate in physical electronics from the Institute of Semiconductors, Chinese Academacy of Sciences (CAS), Beijing China, under the supervision of Prof. Jianguo Liu. His research focuses on the electronic, photoelectric properties of 2D layered materials and high sensitivity photodetector devices
Zeping Zhao：got her B.S. degree from Hebei University of Technology, Tianjin, China, in 2014, and received a Ph.D. degree in physical electronics from the Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing, China, in 2019. Now she is working for the Institute of Semiconductors, CAS. She has published more than 20 articles in scientific journals. Her study interests focus on high-frequency photodetector devices, optical fiber communication systems technology, high-speed microwave package design, and array hybrid integration
Jianguo Liu：got his B.S. degree in Inner Mongolia Normal University, Inner Mongolia, China, in 1998, received a master’s degree from the Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Anhui, China, in 2004, and got his Ph.D. degree from Nankai University, Tianjin, China, 2007. He worked at Northwestern University as a postdoctoral fellow, America, from 2010 to 2011. Now he is a research fellow of the Institute of Semiconductors, CAS. And he is also a professor of CAS. He has published more than 100 articles in scientific journals and got 67 patents for invention. His research focuses on applied optics. Dr. Liu received the funding of the National Science Fund for Outstanding Youth in 2017
Zhongming Wei：received his B.S. from Wuhan University (China) in 2005, and Ph.D. from the Institute of Chemistry, Chinese Academy of Sciences in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor in Prof. Thomas Bjørnholm's group at University of Copenhagen, Denmark. Currently, he is working as a Professor at the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their optoelectronic devices
Corresponding author: zzp@semi.ac.cn; Jgliu@semi.ac.cn; zmwei@semi.ac.cn
Received Date: 2022-04-28
Revised Date: 2022-05-09

Available Online: 2022-06-29

Abstract

Abstract

The in-plane anisotropy of transition metal trichalcogenides (MX₃) has a significant impact on the molding of materials and MX₃ is a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional (1D) semiconductors, ZrSe₃, are systematically investigated through experiments and theoretical studies. The ZrSe₃-based photodetector shows impressive wide spectral response from ultraviolet (UV) to near infrared (NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^-1 and detectivity of ~10⁶ at 532 nm. Moreover, the dichroic ratio of ZrSe₃-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSe₃ has potential in optoelectronic applications and polarization detectors.
- quasi-1D,
- ZrSe₃,
- polarization-sensitive

Supplementary materials to this article can be found online at https://doi.org/10.1088/1674-4926/43/10/102001.

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References(41)

References

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Polarization sensitive photodetector based on quasi-1D ZrSe₃

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Polarization sensitive photodetector based on quasi-1D ZrSe₃

Polarization sensitive photodetector based on quasi-1D ZrSe₃