Fig. 1.
(Color online) The structure of (a) DC DT SJ LDMOS and (b) Con. DT SJ LDMOS.
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| Citation: |
Lijuan Wu, Shaolian Su, Xing Chen, Jinsheng Zeng, Haifeng Wu. A deep trench super-junction LDMOS with double charge compensation layer[J]. Journal of Semiconductors, 2022, 43(10): 104102. doi: 10.1088/1674-4926/43/10/104102
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Lijuan Wu, Shaolian Su, Xing Chen, Jinsheng Zeng, Haifeng Wu. 2022: A deep trench super-junction LDMOS with double charge compensation layer. Journal of Semiconductors, 43(10): 104102. doi: 10.1088/1674-4926/43/10/104102
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A deep trench super-junction LDMOS with double charge compensation layer
doi: 10.1088/1674-4926/43/10/104102
More Information-
Abstract
A deep trench super-junction LDMOS with double charge compensation layer (DC DT SJ LDMOS) is proposed in this paper. Due to the capacitance effect of the deep trench which is known as silicon–insulator–silicon (SIS) capacitance, the charge balance in the super-junction region of the conventional deep trench SJ LDMOS (Con. DT SJ LDMOS) device will be broken, resulting in breakdown voltage (BV) of the device drops. DC DT SJ LDMOS solves the SIS capacitance effect by adding a vertical variable doped charge compensation layer and a triangular charge compensation layer inside the Con. DT SJ LDMOS device. Therefore, the drift region reaches an ideal charge balance state again. The electric field is optimized by double charge compensation and gate field plate so that the breakdown voltage of the proposed device is improved sharply, meanwhile the enlarged on-current region reduces its specific on-resistance. The simulation results show that compared with the Con. DT SJ LDMOS, the BV of the DC DT SJ LDMOS has been increased from 549.5 to 705.5 V, and the Ron,sp decreased to 23.7 mΩ·cm2. -
References
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