Fig. 1.
(Color online) Structure of Flash switch unit.
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| Citation: |
Yueer Shan, Zhengzhou Cao, Guozhu Liu. Research on eigenstate current control technology of Flash-based FPGA[J]. Journal of Semiconductors, 2022, 43(12): 122401. doi: 10.1088/1674-4926/43/12/122401
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Yueer Shan, Zhengzhou Cao, Guozhu Liu. 2022: Research on eigenstate current control technology of Flash-based FPGA. Journal of Semiconductors, 43(12): 122401. doi: 10.1088/1674-4926/43/12/122401
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Research on eigenstate current control technology of Flash-based FPGA
doi: 10.1088/1674-4926/43/12/122401
More Information-
Abstract
To solve the Flash-based FPGA in the manufacturing process, the ion implantation process will bring electrons into the floating gate of the P-channel Flash cell so that the Flash switch is in a weak conduction state, resulting in the Flash-based FPGA eigenstate current problem. In this paper, the mechanism of its generation is analyzed, and four methods are used including ultraviolet light erasing, high-temperature baking, X-ray irradiation, and circuit logic control. A comparison of these four methods can identify the circuit design by using circuit logic to control the path of the power supply that is the most suitable and reliable method to solve the Flash-based FPGA eigenstate current problem. By this method, the power-on current of 3.5 million Flash-based FPGA can be reduced to less than 0.3 A, and the chip can start normally. The function and performance of the chip can then be further tested and evaluated, which is one of the key technologies for developing Flash-based FPGA.-
Keywords:
- Flash-based FPGA,
- threshold voltage,
- eigenstate current
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References
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