J. Semicond. > 2022, Volume 43 > Issue 2 > 022301
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ARTICLES

Silicon-integrated high-speed mode and polarization switch-and-selector

Yihang Dong1, Yong Zhang1, , Jian Shen1, Zihan Xu1, Xihua Zou2 and Yikai Su1,

+ Author Affiliations

 Corresponding author: Yong Zhang, yongzhang@sjtu.edu.cn; Yikai Su, yikaisu@sjtu.edu.cn

DOI: 10.1088/1674-4926/43/2/022301

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Abstract: On-chip optical communications are growingly aiming at multimode operation together with mode-division multiplexing to further increase the transmission capacity. Optical switches, which are capable of optical signals switching at the nodes, play a key role in optical networks. We demonstrate a 2 × 2 electro-optic Mach–Zehnder interferometer-based mode- and polarization-selective switch fabricated by standard complementary metal–oxide–semiconductor process. An electro optic tuner based on a PN-doped junction in one of the Mach–Zehnder interferometer arms enables dynamic switching in 11 ns. For all the channels, the overall insertion losses and inter-modal crosstalk values are below 9.03 and –15.86 dB at 1550 nm, respectively.

Key words: mode and polarization switch-and-selector, silicon photonics, high speed

Given the ever-increasing internet traffic, scaling the per-fiber transmission capacity is highly desired[1]. Several multiplexing schemes, including wavelength-division multiplexing (WDM), polarization-division multiplexing (PDM), and mode-division multiplexing (MDM), are exploited to increase the communication capacity. Among them, MDM provides an attractive option to further expand the transmission capacity by introducing multiple modes for each wavelength carrier[2, 3].

Silicon optical switches based on a silicon-on-insulator platform offer the potential to enable high-speed optical networks due to their compatibility with a commercial complementary metal–oxide–semiconductor (CMOS) process[4-6]. When leveraging multiple physical dimensions, a two-dimensional or three-dimensional switch can be realized to achieve scaled capacity. An on-chip multimode optical switch was reported based on quasi-phase-matching and a staged coupling method with the capability of three-wavelength and two-mode multiplexing[7]. Recently, a WDM-compatible multimode optical switch working for three wavelengths and two modes was demonstrated[8]. A silicon wavelength and mode switch-and-selector architecture with two wavelengths and two modes was reported with improved flexibility of the network[9]. In contrast, mode and polarization dimensions own the merit of multiplexing signals with one laser source. Recently, silicon optical switches carrying four-mode and two-mode dual-polarization were demonstrated using Mach–Zehnder interferometers (MZIs), respectively[10, 11]. To further scale the capacity, we presented a switch with three hybrid dimensions including mode, polarization and wavelength[12]. However, previous multi-dimensional switches were based on thermo-optic tuning with a slow response time of several µs. Dynamic and high-speed multi-dimensional optical switching is highly desired.

In this paper, we report a 2 × 2 high-speed mode and polarization switch-and-selector architecture (HMPSA) based on MZI switches with PN junction-based phase shifters. Compared to thermo-optic switches, the electro-optic (EO) HMPSA exhibits a fast switching time of 11 ns benefitting from the free-carrier plasma dispersion effect. Moreover, the numbers of the MZIs are reduced by half in this configuration. The measured overall insertion losses (ILs) are below 9.03 dB. The inter-modal and intra-modal crosstalk (XT) of the HMPSA are lower than –15.86 and –7.32 dB for all the channels at 1550 nm, respectively.

The architecture of the silicon-integrated HMPSA for two modes and dual polarizations is shown in Fig. 1(a). Similarly to a wavelength switch-and-selector architecture, the HMPSA can route any optical signal from one input port to an arbitrary output port.

Figure  1.  (Color online) (a) Architecture of the proposed 2 × 2 HMPSA (The calculated mode patterns of the TE0, TE1, TM0 and TM1 modes are intensity profiles). Structures of (b) MMUX and (c) 2 × 2 high-speed MZI switch. (d) Cross-sectional view of the PN phase shifter. (MMUX-A: auxiliary mode multiplexer; MDEMUX-A: auxiliary mode de-multiplexer.)
DownLoad: Full-Size Img PowerPoint

The proposed switches consist of mode polarization beam splitters (PBSs), mode multiplexers (MMUXs), polarization rotators (PRs) and crossings. The mode multiplexers are based on asymmetric directional couplers to multiplex the TE1 and TM1 modes[13]. The crossings are implemented by 90°-crossed multi-mode interferometer (MMIs)[14]. The polarization beam splitters and rotators are the building blocks of the process design kit (PDK) from Advanced Micro Foundry (AMF)[15]. The device has two input ports (I1, I2) and two output ports (O1, O2). Firstly, the four mode- and polarization-multiplexed channels with TE0, TE1, TM0 and TM1 modes from an input port I1 or I2 are converted to the fundamental modes by the corresponding mode de-multiplexers (MDEMUXs) and the PBSs. After rotating the TM fundamental mode to the TE fundamental mode by PRs, signals are switched to the output waveguides by the follow-on MZI-based EO switches. After the TM channels are recovered by the PRs, the switched signals are multiplexed by the MMUXs and the polarization beam combiners (PBCs) and finally routed to output port O1 or O2.

Various structures have been used as MMUX, such as Y-splitters[16, 17], MMI coupler[18] and asymmetrical directional couplers[19, 20]. Here we choose asymmetric directional couplers to achieve mode (de-)multiplexing for their better compactness in this design. As shown in Fig. 1(b), the widths of the waveguides carrying the two modes and dual polarization are chosen to be 0.4, 0.845, 0.4 and 1.045 µm, respectively. We use 10-µm-length adiabatic tapers to connect the multimode waveguides of different widths. For TE1 and TM1 modes, the optimized gaps between the access waveguides and the multimode waveguides are 0.2 and 0.3 µm, respectively. The coupling lengths are designed as 18.5 and 8.25 µm, respectively. The coupling between a few-mode fiber and a silicon multimode waveguide is still challenging[21-23]. Consequently, two MMUX-As and two MDEMUX-As outside the 2 × 2 HMPSA are used to couple high-order modes.

Fig. 1(c) depicts the schematic configuration of the 2 × 2 high-speed MZI switch. A 2 × 2 MMI structure is used as the 3 dB coupler for its compact size and broad-band response. One arm of the MZI contains an EO phase shifter based on a lateral 50-μm-long p–n diode to induce the π phase shift for high-speed switching operations.

The fabrication of the HMPSA chip is carried out by ultra-violet lithography on a silicon-on-insulator wafer with a 220-nm-thick silicon layer on 2 µm buried dioxide layer using CMOS processes in AMF, Singapore. Fig. 2(a) shows the micrograph of the fabricated 2 × 2 HMPSA with a footprint of 2.2 × 0.9 mm2. Fig. 2(b)–2(e) depict magnified micrographs of a PBS, a MMUX, a PR, a 2 × 2 high-speed MZI switch and waveguide crossings, respectively.

Figure  2.  (Color online) (a) Micrograph of a silicon chip including a HMPSA. Magnified micrographs of (b) a PBS and a MMUX, (c) a PR, (d) a MZI switch and (e) waveguide crossings.
DownLoad: Full-Size Img PowerPoint

In the experiment setup, a tunable light source (Keysight 81960A) and an optical power meter (Keysight N7744A) are utilized to measure the spectral responses of the HMPSA. Light is coupled into and out of the HMPSA by grating couplers with a shallow etching depth of 70 nm and periods of 630 and 980 nm for supporting TE and TM polarization, respectively. The fiber-to-chip coupling losses are 5.3 and 6.4 dB/facet at 1550 nm, respectively. Fig. 3 shows the measured transmission spectra, which have been normalized by the grating couplers and the MMUX on the same chip. Table 1 summarizes the ILs performance of the building blocks. Take the input port I1 of TE0 channel as an example. When the powers supplied to the heater are 6.23 and 29.03 mW, the signals are switched to output port O1 and O2, respectively. By tuning the powers applied to the corresponding MZI switches, optical signal from each input port is capable of being routed to all available output ports for all the channels. Here we manually adjusted the switching power to allow the maximum output optical power, while it is possible to achieve switch control and calibration with built-in power monitors and a feedback loop[24, 25]. For all the channels, the ILs are below 9.03 dB at 1550 nm, which are mainly caused by the manufacturing imperfection, incomplete coupling in the MMUXs and the PBSs. The ILs can be reduced by using dual-core adiabatic tapers[26] or higher silicon layer thickness[27] with improved fabrication tolerance. The inter-modal XT performance of the HMPSA is characterized by transmitting an optical signal from a defined input port and then measuring the transmission spectrum at all output ports sequentially. All MZI heating powers are manually adjusted to enable maximum output at the same port. For example, when we measure the inter-modal XT from port I1-TE0 to port O2-TE1, the MZI switches for the port I1-TE0 and I1-TE1 are both set to output at the port O2. As shown in Fig. 3, the measured inter-modal XT values of the fabricated device are lower than –15.86 dB at 1550 nm for all the channels.

Figure  3.  (Color online) Results of measured inter-modal crosstalk.
DownLoad: Full-Size Img PowerPoint
Table  1.  Measured insertion losses of the building blocks.
ItemLoss
Grating coupler for TE05.3 dB/facet
Grating coupler for TM06.4 dB/facet
PBS for TE00.98 dB
PBS for TM01.04 dB
PR for TE00.91 dB
PR for TM00.78 dB
MMUX for TE01.61 dB
MMUX for TM01.32 dB
DownLoad: CSV  | Show Table

Fig. 4 shows the measured intra-modal XT introduced by the high-speed MZI switches. For the port I1-TE0, the measured intra-modal XT are below –10.13 dB at 1550 nm. For all the inputs, the overall intra-modal XT are lower than –7.32 dB at 1550 nm. The relatively large crosstalk introduces significant, but tolerable, impairments for a quadrature phase-shift keying (QPSK) format by using an on-chip self-homodyne coherent detection scheme[28]. Further intra-modal XT reduction can be realized via two MZI switches[29] or using the variable coupler[30].

Figure  4.  (Color online) Results of measured intra-modal crosstalk.
DownLoad: Full-Size Img PowerPoint

We then measure the dynamic routing performance of the switch by applying a 1 MHz square-wave voltage signal to the device. The peak-to-peak drive voltage is 1.1 V biased at a direct current voltage at 0.8 V. Fig. 5 shows the measured response for the switch. The measured 10%–90% switching time upon electrical tuning are 11 and 10 ns for the rising and falling edges, respectively.

Figure  5.  (Color online) Measured dynamic response of the switch. Yellow and blue curves represent the applied square-wave voltage signal and measured signal dynamic switching, respectively. The dotted lines donate the 10% and 90% of the peak voltage.
DownLoad: Full-Size Img PowerPoint

In conclusion, a 2 × 2 HMPSA is experimentally demonstrated based on EO MZIs. The ILs of the switch are 3.55–9.03 dB at 1550 nm. The measured inter-modal and intra-modal XT values are better than –15.86 and –7.32 dB at 1550 nm, respectively. The switching time (10%–90%) for the rising and falling edges are 11 and 10 ns, respectively. The demonstrated silicon 2 × 2 HMPSA has promising potential for future high-speed optical networks with switching time of only nanoseconds. Furthermore, this scheme can be extended to higher-order modes by employing cascaded subwavelength-grating-based directional couplers[31].

This work was supported in part by the National Key Research and Development Program of China under Grant 2019YFB2203600, the National Natural Science Foundation of China (NSFC) under Grant 61975115/61835008/62035016, and the Science and Technology Commission of Shanghai Municipality under Grant 2017SHZDZX03.



[1]
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[2]
Stern B, Zhu X L, Chen C P, et al. On-chip mode-division multiplexing switch. Optica, 2015, 2, 530 doi: 10.1364/OPTICA.2.000530
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Yao Y H, Cheng Z, Dong J J, et al. Performance of integrated optical switches based on 2D materials and beyond. Front Optoelectron, 2020, 13, 129 doi: 10.1007/s12200-020-1058-3
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Luo L W, Ophir N, Chen C P, et al. WDM-compatible mode-division multiplexing on a silicon chip. Nat Commun, 2014, 5, 3069 doi: 10.1038/ncomms4069
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Jia H, Yang S L, Zhou T, et al. WDM-compatible multimode optical switching system-on-chip. Nanophotonics, 2019, 8, 889 doi: 10.1515/nanoph-2019-0005
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Han L S, Kuo B P P, Alic N, et al. Silicon Photonic Wavelength and Mode Selective Switch for WDM-MDM networks. 2019 Optical Fiber Communication Conference (OFC), 2019, 1
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Jia H, Zhou T, Zhang L, et al. Optical switch compatible with wavelength division multiplexing and mode division multiplexing for photonic networks-on-chip. Opt Express, 2017, 25, 20698 doi: 10.1364/OE.25.020698
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Zhang Y, He Y, Zhu Q M, et al. On-chip silicon photonic 2 × 2 mode- and polarization-selective switch with low inter-modal crosstalk. Photon Res, 2017, 5, 521 doi: 10.1364/PRJ.5.000521
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Zhang Y, Zhang R H, Zhu Q M, et al. Architecture and devices for silicon photonic switching in wavelength, polarization and mode. J Light Technol, 2019, 38, 215 doi: 10.1109/JLT.2019.2946171
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Dai D, Wang J, Shi Y. Silicon mode (de)multiplexer enabling high capacity photonic networks-on-chip with a single-wavelength-carrier light. Opt Lett, 2013, 38, 1422 doi: 10.1364/OL.38.001422
[14]
Liu Y Y, Shainline J M, Zeng X G, et al. Ultra-low-loss CMOS-compatible waveguide crossing arrays based on multimode Bloch waves and imaginary coupling. Opt Lett, 2014, 39, 335 doi: 10.1364/OL.39.000335
[15]
Siew S Y, Li B, Gao F, et al. Review of silicon photonics technology and platform development. J Light Technol, 2021, 39, 4374 doi: 10.1109/JLT.2021.3066203
[16]
Driscoll J B, Grote R R, Souhan B, et al. Asymmetric Y junctions in silicon waveguides for on-chip mode-division multiplexing. Opt Lett, 2013, 38, 1854 doi: 10.1364/OL.38.001854
[17]
Chen W, Wang P, Yang J. Mode multi/demultiplexer based on cascaded asymmetric Y-junctions. Opt Express, 2013, 21, 25113 doi: 10.1364/OE.21.025113
[18]
Uematsu T, Ishizaka Y, Kawaguchi Y, et al. Design of a compact two-mode multi/demultiplexer consisting of multimode interference waveguides and a wavelength-insensitive phase shifter for mode-division multiplexing transmission. J Light Technol, 2012, 30, 2421 doi: 10.1109/JLT.2012.2199961
[19]
Sun Y, Xiong Y L, Ye W N. Experimental demonstration of a two-mode (de)multiplexer based on a taper-etched directional coupler. Opt Lett, 2016, 41, 3743 doi: 10.1364/OL.41.003743
[20]
Jia H, Zhang L, Ding J, et al. Microring modulator matrix integrated with mode multiplexer and de-multiplexer for on-chip optical interconnect. Opt Express, 2017, 25, 422 doi: 10.1364/OE.25.000422
[21]
Dai D, Mao M. Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits. Opt Express, 2015, 23, 28376 doi: 10.1364/OE.23.028376
[22]
Jiang W F, Miao J Y, Li T. Compact silicon 10-mode multi/demultiplexer for hybrid mode- and polarisation-division multiplexing system. Sci Rep, 2019, 9, 13223 doi: 10.1038/s41598-019-49763-0
[23]
Zhang Y, He Y, Wang H W, et al. Ultra-broadband mode size converter using on-chip metamaterial-based Luneburg lens. ACS Photonics, 2021, 8, 202 doi: 10.1021/acsphotonics.0c01269
[24]
Zheng X, Chang E, Amberg P, et al. A high-speed, tunable silicon photonic ring modulator integrated with ultra-efficient active wavelength control. Opt Express, 2014, 22, 12628 doi: 10.1364/OE.22.012628
[25]
Jayatilleka H, Murray K, Guillén-Torres M Á, et al. Wavelength tuning and stabilization of microring-based filters using silicon in-resonator photoconductive heaters. Opt Express, 2015, 23, 25084 doi: 10.1364/OE.23.025084
[26]
Dai D X, Li C L, Wang S P, et al. 10-channel mode (de)multiplexer with dual polarizations. Laser Photonics Rev, 2018, 12, 1700109 doi: 10.1002/lpor.201700109
[27]
Xu D X, Schmid J H, Reed G T, et al. Silicon photonic integration platform — have we found the sweet spot. IEEE J Sel Top Quantum Electron, 2014, 20, 189 doi: 10.1109/JSTQE.2014.2299634
[28]
Huang H Z, Huang Y T, He Y, et al. Demonstration of terabit coherent on-chip optical interconnects employing mode-division multiplexing. Opt Lett, 2021, 46, 2292 doi: 10.1364/OL.424727
[29]
Okuno M, Kato K, Nagase R, et al. Silica-based 8 × 8 optical matrix switch integrating new switching units with large fabrication tolerance. J Light Technol, 1999, 17, 771 doi: 10.1109/50.762891
[30]
Suzuki K, Cong G, Tanizawa K, et al. Ultra-high-extinction-ratio 2 × 2 silicon optical switch with variable splitter. Opt Express, 2015, 23, 9086 doi: 10.1364/OE.23.009086
[31]
He Y, Zhang Y, Zhu Q M, et al. Silicon high-order mode (de)multiplexer on single polarization. J Light Technol, 2018, 36, 5746 doi: 10.1109/JLT.2018.2878529
Fig. 1.  (Color online) (a) Architecture of the proposed 2 × 2 HMPSA (The calculated mode patterns of the TE0, TE1, TM0 and TM1 modes are intensity profiles). Structures of (b) MMUX and (c) 2 × 2 high-speed MZI switch. (d) Cross-sectional view of the PN phase shifter. (MMUX-A: auxiliary mode multiplexer; MDEMUX-A: auxiliary mode de-multiplexer.)

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) Micrograph of a silicon chip including a HMPSA. Magnified micrographs of (b) a PBS and a MMUX, (c) a PR, (d) a MZI switch and (e) waveguide crossings.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) Results of measured inter-modal crosstalk.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Results of measured intra-modal crosstalk.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Measured dynamic response of the switch. Yellow and blue curves represent the applied square-wave voltage signal and measured signal dynamic switching, respectively. The dotted lines donate the 10% and 90% of the peak voltage.

DownLoad: Full-Size Img PowerPoint

Table 1.   Measured insertion losses of the building blocks.

ItemLoss
Grating coupler for TE05.3 dB/facet
Grating coupler for TM06.4 dB/facet
PBS for TE00.98 dB
PBS for TM01.04 dB
PR for TE00.91 dB
PR for TM00.78 dB
MMUX for TE01.61 dB
MMUX for TM01.32 dB
DownLoad: CSV
[1]
Winzer P J, Neilson D T, Chraplyvy A R. Fiber-optic transmission and networking: The previous 20 and the next 20 years. Opt Express, 2018, 26, 24190 doi: 10.1364/OE.26.024190
[2]
Stern B, Zhu X L, Chen C P, et al. On-chip mode-division multiplexing switch. Optica, 2015, 2, 530 doi: 10.1364/OPTICA.2.000530
[3]
Xiong Y L, Priti R B, Liboiron-Ladouceur O. High-speed two-mode switch for mode-division multiplexing optical networks. Optica, 2017, 4, 1098 doi: 10.1364/OPTICA.4.001098
[4]
Yao Y H, Cheng Z, Dong J J, et al. Performance of integrated optical switches based on 2D materials and beyond. Front Optoelectron, 2020, 13, 129 doi: 10.1007/s12200-020-1058-3
[5]
Zhao Y H, Wang X, Gao D S, et al. On-chip programmable pulse processor employing cascaded MZI-MRR structure. Front Optoelectron, 2019, 12, 148 doi: 10.1007/s12200-018-0846-5
[6]
Su Y K, Zhang Y, Qiu C Y, et al. Silicon photonic platform for passive waveguide devices: Materials, fabrication, and applications. Adv Mater Technol, 2020, 5, 1901153 doi: 10.1002/admt.201901153
[7]
Luo L W, Ophir N, Chen C P, et al. WDM-compatible mode-division multiplexing on a silicon chip. Nat Commun, 2014, 5, 3069 doi: 10.1038/ncomms4069
[8]
Jia H, Yang S L, Zhou T, et al. WDM-compatible multimode optical switching system-on-chip. Nanophotonics, 2019, 8, 889 doi: 10.1515/nanoph-2019-0005
[9]
Han L S, Kuo B P P, Alic N, et al. Silicon Photonic Wavelength and Mode Selective Switch for WDM-MDM networks. 2019 Optical Fiber Communication Conference (OFC), 2019, 1
[10]
Jia H, Zhou T, Zhang L, et al. Optical switch compatible with wavelength division multiplexing and mode division multiplexing for photonic networks-on-chip. Opt Express, 2017, 25, 20698 doi: 10.1364/OE.25.020698
[11]
Zhang Y, He Y, Zhu Q M, et al. On-chip silicon photonic 2 × 2 mode- and polarization-selective switch with low inter-modal crosstalk. Photon Res, 2017, 5, 521 doi: 10.1364/PRJ.5.000521
[12]
Zhang Y, Zhang R H, Zhu Q M, et al. Architecture and devices for silicon photonic switching in wavelength, polarization and mode. J Light Technol, 2019, 38, 215 doi: 10.1109/JLT.2019.2946171
[13]
Dai D, Wang J, Shi Y. Silicon mode (de)multiplexer enabling high capacity photonic networks-on-chip with a single-wavelength-carrier light. Opt Lett, 2013, 38, 1422 doi: 10.1364/OL.38.001422
[14]
Liu Y Y, Shainline J M, Zeng X G, et al. Ultra-low-loss CMOS-compatible waveguide crossing arrays based on multimode Bloch waves and imaginary coupling. Opt Lett, 2014, 39, 335 doi: 10.1364/OL.39.000335
[15]
Siew S Y, Li B, Gao F, et al. Review of silicon photonics technology and platform development. J Light Technol, 2021, 39, 4374 doi: 10.1109/JLT.2021.3066203
[16]
Driscoll J B, Grote R R, Souhan B, et al. Asymmetric Y junctions in silicon waveguides for on-chip mode-division multiplexing. Opt Lett, 2013, 38, 1854 doi: 10.1364/OL.38.001854
[17]
Chen W, Wang P, Yang J. Mode multi/demultiplexer based on cascaded asymmetric Y-junctions. Opt Express, 2013, 21, 25113 doi: 10.1364/OE.21.025113
[18]
Uematsu T, Ishizaka Y, Kawaguchi Y, et al. Design of a compact two-mode multi/demultiplexer consisting of multimode interference waveguides and a wavelength-insensitive phase shifter for mode-division multiplexing transmission. J Light Technol, 2012, 30, 2421 doi: 10.1109/JLT.2012.2199961
[19]
Sun Y, Xiong Y L, Ye W N. Experimental demonstration of a two-mode (de)multiplexer based on a taper-etched directional coupler. Opt Lett, 2016, 41, 3743 doi: 10.1364/OL.41.003743
[20]
Jia H, Zhang L, Ding J, et al. Microring modulator matrix integrated with mode multiplexer and de-multiplexer for on-chip optical interconnect. Opt Express, 2017, 25, 422 doi: 10.1364/OE.25.000422
[21]
Dai D, Mao M. Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits. Opt Express, 2015, 23, 28376 doi: 10.1364/OE.23.028376
[22]
Jiang W F, Miao J Y, Li T. Compact silicon 10-mode multi/demultiplexer for hybrid mode- and polarisation-division multiplexing system. Sci Rep, 2019, 9, 13223 doi: 10.1038/s41598-019-49763-0
[23]
Zhang Y, He Y, Wang H W, et al. Ultra-broadband mode size converter using on-chip metamaterial-based Luneburg lens. ACS Photonics, 2021, 8, 202 doi: 10.1021/acsphotonics.0c01269
[24]
Zheng X, Chang E, Amberg P, et al. A high-speed, tunable silicon photonic ring modulator integrated with ultra-efficient active wavelength control. Opt Express, 2014, 22, 12628 doi: 10.1364/OE.22.012628
[25]
Jayatilleka H, Murray K, Guillén-Torres M Á, et al. Wavelength tuning and stabilization of microring-based filters using silicon in-resonator photoconductive heaters. Opt Express, 2015, 23, 25084 doi: 10.1364/OE.23.025084
[26]
Dai D X, Li C L, Wang S P, et al. 10-channel mode (de)multiplexer with dual polarizations. Laser Photonics Rev, 2018, 12, 1700109 doi: 10.1002/lpor.201700109
[27]
Xu D X, Schmid J H, Reed G T, et al. Silicon photonic integration platform — have we found the sweet spot. IEEE J Sel Top Quantum Electron, 2014, 20, 189 doi: 10.1109/JSTQE.2014.2299634
[28]
Huang H Z, Huang Y T, He Y, et al. Demonstration of terabit coherent on-chip optical interconnects employing mode-division multiplexing. Opt Lett, 2021, 46, 2292 doi: 10.1364/OL.424727
[29]
Okuno M, Kato K, Nagase R, et al. Silica-based 8 × 8 optical matrix switch integrating new switching units with large fabrication tolerance. J Light Technol, 1999, 17, 771 doi: 10.1109/50.762891
[30]
Suzuki K, Cong G, Tanizawa K, et al. Ultra-high-extinction-ratio 2 × 2 silicon optical switch with variable splitter. Opt Express, 2015, 23, 9086 doi: 10.1364/OE.23.009086
[31]
He Y, Zhang Y, Zhu Q M, et al. Silicon high-order mode (de)multiplexer on single polarization. J Light Technol, 2018, 36, 5746 doi: 10.1109/JLT.2018.2878529
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    Yihang Dong, Yong Zhang, Jian Shen, Zihan Xu, Xihua Zou, Yikai Su. Silicon-integrated high-speed mode and polarization switch-and-selector[J]. Journal of Semiconductors, 2022, 43(2): 022301. doi: 10.1088/1674-4926/43/2/022301
    Y H Dong, Y Zhang, J Shen, Z H Xu, X H Zou, Y K Su, Silicon-integrated high-speed mode and polarization switch-and-selector[J]. J. Semicond., 2022, 43(2): 022301. doi: 10.1088/1674-4926/43/2/022301.
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    History

    Received: 12 August 2021 Revised: 12 October 2021 Online: Accepted Manuscript: 14 December 2021Uncorrected proof: 23 December 2021Published: 01 February 2022

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      Article Navigation >  Journal of Semiconductors  > 2022  >  43(2): 022301
      Yihang Dong, Yong Zhang, Jian Shen, Zihan Xu, Xihua Zou, Yikai Su. Silicon-integrated high-speed mode and polarization switch-and-selector[J]. Journal of Semiconductors, 2022, 43(2): 022301. doi: 10.1088/1674-4926/43/2/022301 ****Y H Dong, Y Zhang, J Shen, Z H Xu, X H Zou, Y K Su, Silicon-integrated high-speed mode and polarization switch-and-selector[J]. J. Semicond., 2022, 43(2): 022301. doi: 10.1088/1674-4926/43/2/022301.
      Citation:
      Yihang Dong, Yong Zhang, Jian Shen, Zihan Xu, Xihua Zou, Yikai Su. Silicon-integrated high-speed mode and polarization switch-and-selector[J]. Journal of Semiconductors, 2022, 43(2): 022301. doi: 10.1088/1674-4926/43/2/022301 ****
      Y H Dong, Y Zhang, J Shen, Z H Xu, X H Zou, Y K Su, Silicon-integrated high-speed mode and polarization switch-and-selector[J]. J. Semicond., 2022, 43(2): 022301. doi: 10.1088/1674-4926/43/2/022301.
      shu

      Silicon-integrated high-speed mode and polarization switch-and-selector

      DOI: 10.1088/1674-4926/43/2/022301
      • 1.

        State Key Lab of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

      • 2.

        Center for Information Photonics and Communications, School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China

      More Information
      • Yihang Dong：got his BS from Shanghai University in 2020. Then he joined the State Key Laboratory of Advanced Optical Communication Systems and Networks with the guide of Professor Zhang for relative research
      • Yong Zhang：received his PhD degree from the Huazhong University of Science and Technology, Wuhan, China. He joined Shanghai Jiao Tong University, Shanghai, China, as an assistant professor in 2015 and became an associate professor in 2019. His research areas cover silicon photonics devices, polarization, and mode devices
      • Yikai Su：received his PhD degree in electrical engineering from Northwestern University, Evanston, IL, USA in 2001. He worked at Crawford Hill Laboratory of Bell Laboratories and then joined the Shanghai Jiao Tong University as a full professor in 2004. His research areas cover silicon photonic devices for information transmission and switching
      • Corresponding author: yongzhang@sjtu.edu.cn; yikaisu@sjtu.edu.cn
      • Received Date: 2021-08-12
      • Revised Date: 2021-10-12
      • Published Date: 2022-02-10

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