Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Lan Bi; Yixu Yao; Qimeng Jiang; Sen Huang; Xinhua Wang; Hao Jin; Xinyue Dai; Zhengyuan Xu; Jie Fan; Haibo Yin; Ke Wei; Xinyu Liu

doi:10.1088/1674-4926/43/3/032801

J. Semicond. > 2022, Volume 43 > Issue 3 > 032801

ARTICLES

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Lan Bi^{1, 2}, Yixu Yao^{1, 2}, Qimeng Jiang^{1, 2,}, Sen Huang^{1, 2,}, Xinhua Wang^{1, 2}, Hao Jin^{1, 2}, Xinyue Dai^{1, 2}, Zhengyuan Xu¹, Jie Fan^{1, 2}, Haibo Yin^{1, 2}, Ke Wei^{1, 2} and Xinyu Liu^{1, 2}

+ Author Affiliations

Corresponding author: Qimeng Jiang, jiangqimeng@ime.ac.cn; Sen Huang, huangsen@ime.ac.cn

DOI: 10.1088/1674-4926/43/3/032801

Abstract: Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN_x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.

Key words: AlGaN/GaN MIS-HEMTs, enhancement-mode, T-shape gate, parasitic capacitance, trapping/de-trapping, capacitance-voltage hysteresis

References

[1]	Boutros K S, Chu R M, Hughes B. GaN power electronics for automotive application. 2012 IEEE Energytech, 2012, 1
[2]	Piedra D, Lu B, Sun M, et al. Advanced power electronic devices based on gallium nitride (GaN). 2015 IEEE International Electron Devices Meeting, 2015, 16.6.1
[3]	Kizilyalli I C, Xu Y A, Carlson E, et al. Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors. 2017 IEEE 5th Work Wide Bandgap Power Devices Appl, 2017, 417
[4]	Chen K J, Häberlen O, Lidow A, et al. GaN-on-Si power technology: Devices and applications. IEEE Trans Electron Devices, 2017, 64, 779 doi: 10.1109/TED.2017.2657579
[5]	Saito W, Nitta T, Kakiuchi Y, et al. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure. IEEE Trans Electron Devices, 2007, 54, 1825 doi: 10.1109/TED.2007.901150
[6]	Chu R M, Corrion A, Chen M, et al. 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance. IEEE Electron Device Lett, 2011, 32, 632 doi: 10.1109/LED.2011.2118190
[7]	Ma X B, Zhang J C, Guo L L, et al. Effects of passivation and FP structure on current collapse in an AlGaN/GaN HEMT. Chin J Semicond, 2007, 28, 73
[8]	Lei Y, Lu H. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT. J Semicond, 2015, 36, 074007 doi: 10.1088/1674-4926/36/7/074007
[9]	Meneghesso G, Bisi D, Rossetto I, et al. Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs. 2016 IEEE Int Integr Reliab Work, 2016, 35
[10]	Zhao R, Huang S, Wang X H, et al. Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs. Appl Phys Lett, 2020, 116, 103502 doi: 10.1063/1.5134886
[11]	Yang S, Tang Z K, Hua M Y, et al. Investigation of SiN_x and AlN passivation for AlGaN/GaN high-electron-mobility transistors: Role of interface traps and polarization charges. IEEE J Electron Devices Soc, 2020, 8, 358 doi: 10.1109/JEDS.2020.2984016
[12]	Viey A G, Vandendaele W, Jaud M A, et al. Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT. 2019 IEEE International Electron Devices Meeting, 2019, 4.3.1
[13]	Huang S, Liu X, Wang X, et al. Ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for manufacturing high-performance GaN-on-Si power devices. IEEE Trans on Electron Devices, 2018, 65, 207 doi: 10.1109/TED.2017.2773201
[14]	Huang S, Wang X H, Liu X Y, et al. Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates. Appl Phys Express, 2019, 12, 024001 doi: 10.7567/1882-0786/aafa0e
[15]	Huang S, Liu X Y, Wang X H, et al. High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure. IEEE Electron Device Lett, 2016, 37, 1617 doi: 10.1109/LED.2016.2617381
[16]	Guo F Q, Huang S, Wang X H, et al. Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments. Appl Phys Lett, 2021, 118, 093503 doi: 10.1063/5.0041421

Fig. 1. (Color online) (a) Cross sectional schematic of the E-mode AlGaN/GaN MIS-HEMT. (b) Microscope photograph of a 1-mm device.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Transfer, (b) output, and (c) three-terminal off-state leakage of the 1-mm E-mode MIS-HEMT.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Schematic of the gate-related capacitances in T-shape gate E-mode AlGaN/GaN MIS-HEMT. (b) Bias set of the C_G–V_G measurement, and (c) the multi-frequency curves of the 1-mm MIS-HEMT.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Bias set of the C_GD measurement. (b) C_GD–V_DG curves with varied hold and forward stressing voltage.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) Schematic and photo of the inductive switching circuit. (b) Waveform of the inductive switching under 50-V V_BUS and (c) the turn-on transients of the DUT.

DownLoad: Full-Size Img PowerPoint

[1]	Boutros K S, Chu R M, Hughes B. GaN power electronics for automotive application. 2012 IEEE Energytech, 2012, 1
[2]	Piedra D, Lu B, Sun M, et al. Advanced power electronic devices based on gallium nitride (GaN). 2015 IEEE International Electron Devices Meeting, 2015, 16.6.1
[3]	Kizilyalli I C, Xu Y A, Carlson E, et al. Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors. 2017 IEEE 5th Work Wide Bandgap Power Devices Appl, 2017, 417
[4]	Chen K J, Häberlen O, Lidow A, et al. GaN-on-Si power technology: Devices and applications. IEEE Trans Electron Devices, 2017, 64, 779 doi: 10.1109/TED.2017.2657579
[5]	Saito W, Nitta T, Kakiuchi Y, et al. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure. IEEE Trans Electron Devices, 2007, 54, 1825 doi: 10.1109/TED.2007.901150
[6]	Chu R M, Corrion A, Chen M, et al. 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance. IEEE Electron Device Lett, 2011, 32, 632 doi: 10.1109/LED.2011.2118190
[7]	Ma X B, Zhang J C, Guo L L, et al. Effects of passivation and FP structure on current collapse in an AlGaN/GaN HEMT. Chin J Semicond, 2007, 28, 73
[8]	Lei Y, Lu H. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT. J Semicond, 2015, 36, 074007 doi: 10.1088/1674-4926/36/7/074007
[9]	Meneghesso G, Bisi D, Rossetto I, et al. Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs. 2016 IEEE Int Integr Reliab Work, 2016, 35
[10]	Zhao R, Huang S, Wang X H, et al. Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs. Appl Phys Lett, 2020, 116, 103502 doi: 10.1063/1.5134886
[11]	Yang S, Tang Z K, Hua M Y, et al. Investigation of SiN_x and AlN passivation for AlGaN/GaN high-electron-mobility transistors: Role of interface traps and polarization charges. IEEE J Electron Devices Soc, 2020, 8, 358 doi: 10.1109/JEDS.2020.2984016
[12]	Viey A G, Vandendaele W, Jaud M A, et al. Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT. 2019 IEEE International Electron Devices Meeting, 2019, 4.3.1
[13]	Huang S, Liu X, Wang X, et al. Ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for manufacturing high-performance GaN-on-Si power devices. IEEE Trans on Electron Devices, 2018, 65, 207 doi: 10.1109/TED.2017.2773201
[14]	Huang S, Wang X H, Liu X Y, et al. Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates. Appl Phys Express, 2019, 12, 024001 doi: 10.7567/1882-0786/aafa0e
[15]	Huang S, Liu X Y, Wang X H, et al. High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure. IEEE Electron Device Lett, 2016, 37, 1617 doi: 10.1109/LED.2016.2617381
[16]	Guo F Q, Huang S, Wang X H, et al. Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments. Appl Phys Lett, 2021, 118, 093503 doi: 10.1063/5.0041421

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Received: 27 September 2021 Revised: 15 October 2021 Online: Uncorrected proof: 23 December 2021Accepted Manuscript: 23 December 2021Published: 10 March 2022

Article Navigation > Journal of Semiconductors > 2022 > 43(3): 032801

Lan Bi, Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, Zhengyuan Xu, Jie Fan, Haibo Yin, Ke Wei, Xinyu Liu. Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs[J]. Journal of Semiconductors, 2022, 43(3): 032801. doi: 10.1088/1674-4926/43/3/032801 ****L Bi, Y X Yao, Q M Jiang, S Huang, X H Wang, H Jin, X Y Dai, Z Y Xu, J Fan, H B Yin, K Wei, X Y Liu, Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs[J]. J. Semicond., 2022, 43(3): 032801. doi: 10.1088/1674-4926/43/3/032801.

Citation:

L Bi, Y X Yao, Q M Jiang, S Huang, X H Wang, H Jin, X Y Dai, Z Y Xu, J Fan, H B Yin, K Wei, X Y Liu, Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs[J]. J. Semicond., 2022, 43(3): 032801. doi: 10.1088/1674-4926/43/3/032801.

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Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

DOI: 10.1088/1674-4926/43/3/032801

Lan Bi^1,2,
Yixu Yao^1,2,
Qimeng Jiang^1,2,,
Sen Huang^1,2,,
Xinhua Wang^1,2,
Hao Jin^1,2,
Xinyue Dai^1,2,
Zhengyuan Xu¹,
Jie Fan^1,2,
Haibo Yin^1,2,
Ke Wei^1,2,
Xinyu Liu^1,2

1.
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2.
Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Lan Bi：got his MS degree from the Institute of Electrons, Chinese Academy of Sciences, Beijing. Now he is a PhD student at the Institute of Microelectronics, Chinese Academy of Science. His research focuses on fabrication and monolithic integration of GaN devices
Qimeng Jiang：received his PhD degree from The Hong Kong University of Science and Technology, Hong Kong, China, in 2015. He is currently a professor with the Institute of Microelectronics, Chinese Academy of Sciences, Beijing. His current research interests include advanced design and fabrication technologies for power semiconductor devices and ICs
Sen Huang：received his PhD degree from Peking University, Beijing, China, in 2009. He is currently a professor with the Institute of Microelectronics, Chinese Academy of Sciences, Beijing. His current research interests include advanced design, fabrication, and characterization technologies for III–V power semiconductor devices
Corresponding author: jiangqimeng@ime.ac.cn; huangsen@ime.ac.cn
Received Date: 2021-09-27
Revised Date: 2021-10-15
Published Date: 2022-03-10

Abstract

Abstract

Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN_x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.
- AlGaN/GaN MIS-HEMTs,
- enhancement-mode,
- T-shape gate,
- parasitic capacitance,
- trapping/de-trapping,
- capacitance-voltage hysteresis

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References(16)

References

[1]	Boutros K S, Chu R M, Hughes B. GaN power electronics for automotive application. 2012 IEEE Energytech, 2012, 1
[2]	Piedra D, Lu B, Sun M, et al. Advanced power electronic devices based on gallium nitride (GaN). 2015 IEEE International Electron Devices Meeting, 2015, 16.6.1
[3]	Kizilyalli I C, Xu Y A, Carlson E, et al. Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors. 2017 IEEE 5th Work Wide Bandgap Power Devices Appl, 2017, 417
[4]	Chen K J, Häberlen O, Lidow A, et al. GaN-on-Si power technology: Devices and applications. IEEE Trans Electron Devices, 2017, 64, 779 doi: 10.1109/TED.2017.2657579
[5]	Saito W, Nitta T, Kakiuchi Y, et al. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure. IEEE Trans Electron Devices, 2007, 54, 1825 doi: 10.1109/TED.2007.901150
[6]	Chu R M, Corrion A, Chen M, et al. 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance. IEEE Electron Device Lett, 2011, 32, 632 doi: 10.1109/LED.2011.2118190
[7]	Ma X B, Zhang J C, Guo L L, et al. Effects of passivation and FP structure on current collapse in an AlGaN/GaN HEMT. Chin J Semicond, 2007, 28, 73
[8]	Lei Y, Lu H. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT. J Semicond, 2015, 36, 074007 doi: 10.1088/1674-4926/36/7/074007
[9]	Meneghesso G, Bisi D, Rossetto I, et al. Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs. 2016 IEEE Int Integr Reliab Work, 2016, 35
[10]	Zhao R, Huang S, Wang X H, et al. Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs. Appl Phys Lett, 2020, 116, 103502 doi: 10.1063/1.5134886
[11]	Yang S, Tang Z K, Hua M Y, et al. Investigation of SiN_x and AlN passivation for AlGaN/GaN high-electron-mobility transistors: Role of interface traps and polarization charges. IEEE J Electron Devices Soc, 2020, 8, 358 doi: 10.1109/JEDS.2020.2984016
[12]	Viey A G, Vandendaele W, Jaud M A, et al. Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT. 2019 IEEE International Electron Devices Meeting, 2019, 4.3.1
[13]	Huang S, Liu X, Wang X, et al. Ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for manufacturing high-performance GaN-on-Si power devices. IEEE Trans on Electron Devices, 2018, 65, 207 doi: 10.1109/TED.2017.2773201
[14]	Huang S, Wang X H, Liu X Y, et al. Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates. Appl Phys Express, 2019, 12, 024001 doi: 10.7567/1882-0786/aafa0e
[15]	Huang S, Liu X Y, Wang X H, et al. High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure. IEEE Electron Device Lett, 2016, 37, 1617 doi: 10.1109/LED.2016.2617381
[16]	Guo F Q, Huang S, Wang X H, et al. Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments. Appl Phys Lett, 2021, 118, 093503 doi: 10.1063/5.0041421

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

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