J. Semicond. > 2022, Volume 43 > Issue 4 > 040101

EDITORIAL

Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Xiaoxing Ke1, and Yong Zhang2,

+ Author Affiliations

 Corresponding author: Xiaoxing Ke, kexiaoxing@bjut.edu.cn; Yong Zhang, yong.zhang@uncc.edu

DOI: 10.1088/1674-4926/43/4/040101

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[1]
Jiang S, Dai Q Y, Guo J H, et al. In-situ/operando characterization techniques for organic semiconductors and devices. J Semicond, 2022, 43(4), 041101 doi: 10.1088/1674-4926/43/4/041101
[2]
Zhang Y, Smith D J. Comprehensive, in operando, and correlative investigation of defects and their impact on device performance. J Semicond, 2022, 43(4), 041102 doi: 10.1088/1674-4926/43/4/041102
[3]
Li L Y, Cheng Y F, Liu Z Y, et al. Study of structure-property relationship of semiconductor nanomaterials by quantitative transmission electron microscopy. J Semicond, 2022, 43(4), 041103 doi: 10.1088/1674-4926/43/4/041103
[4]
Fang Z, Liu Y, Song C Y, et al. In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes. J Semicond, 2022, 43(4), 041104 doi: 10.1088/1674-4926/43/4/041104
[5]
Zhao P L, Li L, Chen G X J, et al. Structural evolution of low-dimensional metal oxide semiconductors under external stress. J Semicond, 2022, 43(4), 041105 doi: 10.1088/1674-4926/43/4/041105
[6]
Wu X M, Ke X X, Sui M L. Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors. J Semicond, 2022, 43(4), 041106 doi: 10.1088/1674-4926/43/4/041106
[1]
Jiang S, Dai Q Y, Guo J H, et al. In-situ/operando characterization techniques for organic semiconductors and devices. J Semicond, 2022, 43(4), 041101 doi: 10.1088/1674-4926/43/4/041101
[2]
Zhang Y, Smith D J. Comprehensive, in operando, and correlative investigation of defects and their impact on device performance. J Semicond, 2022, 43(4), 041102 doi: 10.1088/1674-4926/43/4/041102
[3]
Li L Y, Cheng Y F, Liu Z Y, et al. Study of structure-property relationship of semiconductor nanomaterials by quantitative transmission electron microscopy. J Semicond, 2022, 43(4), 041103 doi: 10.1088/1674-4926/43/4/041103
[4]
Fang Z, Liu Y, Song C Y, et al. In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes. J Semicond, 2022, 43(4), 041104 doi: 10.1088/1674-4926/43/4/041104
[5]
Zhao P L, Li L, Chen G X J, et al. Structural evolution of low-dimensional metal oxide semiconductors under external stress. J Semicond, 2022, 43(4), 041105 doi: 10.1088/1674-4926/43/4/041105
[6]
Wu X M, Ke X X, Sui M L. Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors. J Semicond, 2022, 43(4), 041106 doi: 10.1088/1674-4926/43/4/041106

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    Received: 25 March 2022 Revised: Online: Accepted Manuscript: 02 April 2022Uncorrected proof: 02 April 2022Published: 18 April 2022

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      Article Navigation >  Journal of Semiconductors  > 2022  >  43(4): 040101
      Xiaoxing Ke, Yong Zhang. Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J]. Journal of Semiconductors, 2022, 43(4): 040101. doi: 10.1088/1674-4926/43/4/040101 ****Xiaoxing Ke, Yong Zhang, Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J]. Journal of Semiconductors, 2022, 43(4), 040101 doi: 10.1088/1674-4926/43/4/040101
      Citation:
      Xiaoxing Ke, Yong Zhang. Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J]. Journal of Semiconductors, 2022, 43(4): 040101. doi: 10.1088/1674-4926/43/4/040101 ****
      Xiaoxing Ke, Yong Zhang, Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J]. Journal of Semiconductors, 2022, 43(4), 040101 doi: 10.1088/1674-4926/43/4/040101
      shu

      Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices

      DOI: 10.1088/1674-4926/43/4/040101
      • 1.

        Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

      • 2.

        Electrical and Computer Engineering Department, University of North Carolina at Charlotte, Charlotte, NC 28223, USA

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      • Xiaoxing Ke：is an associate professor at Beijing University of Technology (BJUT), China. She received her Ph.D. degree from Physics Department, University of Antwerp, Belgium in 2010. After 4 years of postdoctoral fellowship in EMAT, University of Antwerp, she joined BJUT in 2014. Her research interests mainly focus on microstructure investigation on energy materials using advanced transmission electron microscopy (TEM), including aberration-corrected (S)TEM and 3D electron tomography
      • Yong Zhang：received the Ph.D. from Dartmouth College in Physics in 1994. He was a Senior Scientist at National Renewable Energy Laboratory before joining ECE Department, UNC-Charlotte as Bissell Distinguished Professor. He is an APS Fellow. His research interests include electronic and optical properties of semiconductors and related nanostructures, organic-inorganic hybrid materials, impurity and defects in semiconductors
      • Corresponding author: kexiaoxing@bjut.edu.cn; yong.zhang@uncc.edu
      • Received Date: 2022-03-25
        Available Online: 2022-04-02

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