J. Semicond. > 2022, Volume 43 > Issue 4 > 041105
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Structural evolution of low-dimensional metal oxide semiconductors under external stress

Peili Zhao1, Lei Li1, Guoxujia Chen1, Xiaoxi Guan1, Ying Zhang1, Weiwei Meng1, Ligong Zhao1, Kaixuan Li1, Renhui Jiang1, Shuangfeng Jia1, He Zheng1, 2, 3, and Jianbo Wang1,

+ Author Affiliations

 Corresponding author: He Zheng, zhenghe@whu.edu.cn; Jianbo Wang, wang@whu.edu.cn

DOI: 10.1088/1674-4926/43/4/041105

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Abstract: Metal oxide semiconductors (MOSs) are attractive candidates as functional parts and connections in nanodevices. Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in structural instability and thus degrade the performance of MOS. Hence, the basic insight into the structural evolutions of low-dimensional MOS is a prerequisite for extensive applications, which unfortunately remains largely unexplored. Herein, we review the recent progress regarding the mechanical deformation mechanisms in MOSs, such as CuO and ZnO nanowires (NWs). We report the phase transformation of CuO NWs resulting from oxygen vacancy migration under compressive stress and the tensile strain-induced phase transition in ZnO NWs. Moreover, the influence of electron beam irradiation on interpreting the mechanical behaviors is discussed.

Key words: metal oxide semiconductor, phase transition, strain, nanowire, in-situ transmission electron microscopy



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Fig. 1.  (Color online) Anelasticity in CuO induced by the point defects migration[69]. (a) Schematic illustration of the anelastic deformation process. (b) High-resolution TEM (HRTEM) image showing the nucleation of CuO0.67 phase (enclosed area), indicated by the inserted fast Fourier transform (FFT) pattern. (c) The reversible transition from CuO0.67 to CuO after the compressive stress released.

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Fig. 2.  (Color online) Oxygen vacancy diffusion pathways in CuO[69]. (a) The high-angle annular dark field (HAADF) showing lattice planes of CuO and metastable CuO0.67 phases. (b –d) Three possible diffusion pathways of O vacancies in CuO. The brown and blue spheres depict O and Cu atoms, respectively.

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Fig. 3.  (Color online) The phase transition of ZnO NW with ${[1\mathop 2\limits^\_ 10]_{\rm{WZ}}}$ axial direction[81]. (a–c) The HAADF images showing the atomistic phase transition of ZnO NW. (d–f) The enlarged view of the regions indicated by the blue rectangles in (a–c), respectively. (g–i) MD simulation results mirror the phase transition pathway observed in the experiments showing the reversible phase transitions. The red and grey spheres depict O and Zn atoms, respectively.

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Fig. 4.  (Color online) The phase stability of WZ, h-MgO, and BCT structures in ZnO[81]. (a) The cross-sectional view of ZnO showing the bond formation and breaking during the phase transition (“○” represents the bond formation of Zn–O, “×” represents the bond breaking of Zn-O). (b) The phase diagram related to the width and thickness of the NWs under 0% and 7% strain. The red and grey spheres depict O and Zn atoms, respectively.

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Fig. 5.  (Color online) The effects of e-beam irradiation on the anelasticity in CuO NWs[27, 69]. (a–d) TEM images showing the anelastic strain recovery with e-beam illumination. (e–h) TEM images showing the anelastic strain recovery of the same CuO NW without e-beam. The images were taken every 10 seconds. (i) Curves showing the anelastic strain as a function of time.

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Fig. 6.  The phase transition of ZnO NW by applying 200 kV e-beam[81]. (a–c) HRTEM images showing the real-time atomistic phase transition process of ZnO NW with the axial direction of ${[1\mathop 2\limits^\_ 10]_{\rm{WZ}}}$. (d–f) FFT patterns corresponding to (a–c), respectively.

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    Received: 12 November 2021 Revised: 01 December 2021 Online: Accepted Manuscript: 11 January 2022Uncorrected proof: 11 January 2022Published: 18 April 2022

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      Article Navigation >  Journal of Semiconductors  > 2022  >  43(4): 041105
      Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, Jianbo Wang. Structural evolution of low-dimensional metal oxide semiconductors under external stress[J]. Journal of Semiconductors, 2022, 43(4): 041105. doi: 10.1088/1674-4926/43/4/041105 ****Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, Jianbo Wang, Structural evolution of low-dimensional metal oxide semiconductors under external stress[J]. Journal of Semiconductors, 2022, 43(4), 041105 doi: 10.1088/1674-4926/43/4/041105
      Citation:
      Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, Jianbo Wang. Structural evolution of low-dimensional metal oxide semiconductors under external stress[J]. Journal of Semiconductors, 2022, 43(4): 041105. doi: 10.1088/1674-4926/43/4/041105 ****
      Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, Jianbo Wang, Structural evolution of low-dimensional metal oxide semiconductors under external stress[J]. Journal of Semiconductors, 2022, 43(4), 041105 doi: 10.1088/1674-4926/43/4/041105
      shu

      Structural evolution of low-dimensional metal oxide semiconductors under external stress

      DOI: 10.1088/1674-4926/43/4/041105
      • 1.

        School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China

      • 2.

        Suzhou Institute of Wuhan University, Suzhou 215123, China

      • 3.

        Wuhan University Shenzhen Research Institute, Shenzhen 518057, China

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      • Peili Zhao：received her Ph.D. from School of Physics and Technology, Wuhan University in 2020. Now, she is a technicist in School of Physics and Technology, Wuhan University. Her research interests are structural characterization of nano materials and in situ mechanical tests in body centered cubic metals
      • Lei Li：received his Ph.D. from School of Physics and Technology, Wuhan University in 2021. Now, he is a technicist at Core Facility of Wuhan University. His research interests are structural characterization of nano materials and in situ mechanical tests applying transmission electron microscopy
      • He Zheng：is selected as the Young Top-notch Talent of Hubei Province. He received his Ph.D. from Wuhan University in 2012 and joined School of Physics and Technology, Wuhan University as an associate professor in 2015. His research interest is uncovering the structure-mechanical/electrical property relationship in low-dimensional structural and functional materials via the in situ electron microscopy
      • Jianbo Wang：is a Luojia Distinguished Professor in the School of Physics and Technology and the Institute for Advanced Studies, and the Director of the Center for Electron Microscopy in Wuhan University, China. He received his Ph.D. from Wuhan University in 2001. He visited CRMC2-CNRS and ESRF (European Synchrotron Radiation Facility) in France during 1999–2000 and Juelich Research Center in German during 2000–2001. His research interests include the static and dynamic atomistic microstructural characterization of materials and related calculations
      • Corresponding author: zhenghe@whu.edu.cn; wang@whu.edu.cn
      • Received Date: 2021-11-12
      • Accepted Date: 2022-01-10
      • Revised Date: 2021-12-01
        • Available Online: 2022-03-24

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