| Citation: |
Genquan Han, Shibing Long, Yuhao Zhang, Yibo Wang, Zhongming Wei. Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices (Ⅰ)[J]. Journal of Semiconductors, 2023, 44(6): 060101. doi: 10.1088/1674-4926/44/6/060101
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G Q Han, S B Long, Y H Zhang, Y B Wang, Z M Wei. Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices (Ⅰ)[J]. J. Semicond, 2023, 44(6): 060101. doi: 10.1088/1674-4926/44/6/060101
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Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices (Ⅰ)
DOI: 10.1088/1674-4926/44/6/060101
More Information
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Genquan Han：is a full professor at Xidian University and a recipient of the National Science Fund for Distinguished Young Scholars. He graduated from Tsinghua University with a bachelor's degree and received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2008. After graduation, he joined the National University of Singapore to conduct research on advanced microelectronic devices and made original contributions in the field of advanced CMOS device research. Since returning to China in 2013, he has mainly focused on research in wide-bandgap gallium oxide (Ga2O3) heterojunction integrated materials and power devices, post-Moore new micro/nano devices and chips. He serves as an editor for IEEE Electron Device Letters -
Shibing Long：is a full professor at the Institute of Microelectronics, University of Science and Technology of China. He received his Ph.D. from the Institute of Microelectronics of the Chinese Academy of Sciences in 2005. Then, he worked there from 2005 to 2018 and joined the University of Science and Technology of China in 2018. His research focuses on micro- and nano-fabrication, RRAM, ultrawide bandgap semiconductor devices (power devices and detectors) and memory circuit design -
Yuhao Zhang：received the B.S. degree from Peking University, Beijing, China, in 2011, and the M.S. and Ph.D. degrees from Massachusetts Institute of Technology (MIT), Cambridge, MA, USA, in 2013 and 2017, respectively. From 2017 to 2018, he was a postdoctoral associate with MIT. Since 2018, he has been an Assistant Professor with the Center for Power Electronics Systems, the Bradley Department of Electrical and Computer Engineering, Virginia Tech. His research interests include power semiconductor devices, (ultra-)wide-bandgap semiconductor materials, power electronics applications, and machine learning assisted co-design -
Yibo Wang：received his B.S. from Chongqing University (China) in 2014, and Ph.D. from Xidian University (China) in 2021. From 2022, he worked as an Assistant Research Fellow in Prof. Ke Xu’s Group at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences. His research interests include Ga2O3 power devices and vertical GaN devices, and has done some works about the heterogeneous integration and superjunction Ga2O3 power transistors -
Zhongming Wei：received his B.S. from Wuhan University (China) in 2005, and Ph.D. from Institute of Chemistry, Chinese Academy of Sciences in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor in Prof. Thomas Bjørnholm's group at University of Copenhagen, Denmark. Currently, he is working as a Professor at Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their optoelectronic devices - Corresponding author: gqhan@xidian.edu.cn; shibinglong@ustc.edu.cn; yhzhang@vt.edu; ybwang2022@sinano.ac.cn; zmwei@semi.ac.cn
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References
[1] Tang W B, Han X L, Zhang X D, et al. Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD. J Semicond, 2023, 44(6), 062801 doi: 10.1088/1674-4926/44/6/062801[2] Wang W, Hu S D, Wang Z L, et al. Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates. J Semicond, 2023, 44(6), 062802 doi: 10.1088/1674-4926/44/6/062802[3] Wang X J, Mu W X, Xie J H, et al. Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by Mist-CVD method. J Semicond, 2023, 44(6), 062803 doi: 10.1088/1674-4926/44/6/062803[4] Cheng L Y, Zhang H Z, Zhang W H, et al. Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction. J Semicond, 2023, 44(6), 062804 doi: 10.1088/1674-4926/44/6/062804[5] Li L J, Li C K, Wang S Q, et al. Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance. J Semicond, 2023, 44(6), 062805 doi: 10.1088/1674-4926/44/6/062805[6] Wang Y F, Han Y R, Gao C, et al. Preparation and photodetection performance of high crystalline quality and large size β-Ga2O3 microwires. J Semicond, 2023, 44(6), 062806 doi: 10.1088/1674-4926/44/6/062806[7] Li B T, Zhang X D, Zhang L, et al. A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties. J Semicond, 2023, 44(6), 061801 doi: 10.1088/1674-4926/44/6/061801[8] Lu X, X Deng Y, Pei Y L, et al. Recent advances in NiO/Ga2O3 heterojunctions for power electronics. J Semicond, 2023, 44(6), 061802 doi: 10.1088/1674-4926/44/6/061802[9] Han G Q, You T G, Wang Y B, et al. Heterogeneous integration technology for the thermal management of Ga2O3 power devices. J Semicond, 2023, 44(6), 060301 doi: 10.1088/1674-4926/44/6/060301 -
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