Fig. 1.
(Color online) Experimental setup of the CVD growth of monolayer WS2 sample.
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| Citation: |
Yao Li, Haiou Zhu, Zongpeng Song. Pressure manipulation of ultrafast carrier dynamics in monolayer WS2[J]. Journal of Semiconductors, 2023, 44(8): 082001. doi: 10.1088/1674-4926/44/8/082001
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Yao Li, Haiou Zhu, Zongpeng Song, Pressure manipulation of ultrafast carrier dynamics in monolayer WS2[J]. Journal of Semiconductors, 2023, 44(8), 082001 doi: 10.1088/1674-4926/44/8/082001
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Pressure manipulation of ultrafast carrier dynamics in monolayer WS2
DOI: 10.1088/1674-4926/44/8/082001
More Information
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Yao Li：is an M.S. student at the Shenzhen Technology University under the supervision of Prof. Haiou Zhu. His research focuses on the dynamic behavior of high-pressure carriers based on TMDs -
Zongpeng Song is an optical testing engineer in the analysis and testing center of Shenzhen Technology University. He received his Ph.D. degree in optical engineering from Shenzhen University. His research focuses on ultrafast spectroscopy - Corresponding author: songzongpeng@sztu.edu.cn
- Revised Date: 2023-03-27 Available Online: 2023-05-25
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Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have intriguing physic properties and offer an exciting platform to explore many features that are important for future devices. In this work, we synthesized monolayer WS2 as an example to study the optical response with hydrostatic pressure. The Raman results show a continuous tuning of the lattice vibrations that is induced by hydrostatic pressure. We further demonstrate an efficient pressure-induced change of the band structure and carrier dynamics via transient absorption measurements. We found that two time constants can be attributed to the capture process of two kinds of defect states, with the pressure increasing from 0.55 GPa to 2.91 GPa, both of capture processes were accelerated, and there is an inflection point within the pressure range of 1.56 GPa to 1.89 GPa. Our findings provide valuable information for the design of future optoelectronic devices. -
References
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