J. Semicond. > 2023, Volume 44 > Issue 9 > 091605
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A landscape of β-Ga2O3 Schottky power diodes

Man Hoi Wong

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 Corresponding author: Man Hoi Wong, eemhwong@ust.hk

DOI: 10.1088/1674-4926/44/9/091605

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Abstract: β-Ga2O3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga2O3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga2O3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.

Key words: β-Ga2O3, Schottky diodes; power device; edge termination; nickel oxide



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Fig. 1.  (Color online) (a) Schematic of the first field-plated β-Ga2O3 SBD. (b) Forward current–voltage (I–V) characteristic of the device. (c) Reverse breakdown characteristic of the device. Reprinted from Ref. [21], with the permission of AIP Publishing.

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Fig. 2.  (Color online) (a) Schematic of a β-Ga2O3 SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO3/SrTiO3 superlattice as the field-plate oxide [(BTO/STO)15 FP] and S2 corresponds to BaTiO3 as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential RON,sp of a β-Ga2O3 SBD with (BTO/STO)15 FP, a β-Ga2O3 SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. © 2021 IEEE. Reprinted, with permission, from Ref. [40].

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Fig. 3.  (Color online) (a) Schematics of beveled-mesa β-Ga2O3 SBDs with a ~45° beveled field plate (BFP) and with a small-angle (~1°) beveled field plate (SABFP). (b) Reverse breakdown characteristics of the BFP-SBD and SABFP-SBD showing higher Vbr than those of mesa-free β-Ga2O3 SBDs that are either unterminated or terminated with a ~45° beveled surface field plate (SFP). (c) Forward I–V characteristics and differential RON,sp of SABFP-SBDs with different anode diameters. © 2019 IEEE. Reprinted, with permission, from Ref. [44].

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Fig. 4.  (Color online) Comparison between reverse breakdown characteristics of β-Ga2O3 SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination. © 2020 IEEE. Reprinted, with permission, from Ref. [45].

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Fig. 5.  (Color online) Schematics of an unterminated β-Ga2O3 SBD, a β-Ga2O3 SBD with self-aligned fluorine plasma treatment (FPT), and a β-Ga2O3 SBD with self-aligned beveled fluorine plasma treatment (BFPT). (b) Forward I–V characteristics and differential RON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs. © 2020 IEEE. Reprinted, with permission, from Ref. [57].

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Fig. 6.  (Color online) Schematic of a β-Ga2O3 SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted from Ref. [63], with the permission of AIP Publishing.

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Fig. 7.  Calculated maximum surface electric fields (Esurf) in β-Ga2O3 SBDs, defined at a maximum reverse leakage current (JR,max) of 1 or 100 mA/cm2 at 25 °C. Experimental data from the literature are also shown (solid for JR,max = 1 mA/cm2 and hollow for JR,max = 100 mA/cm2). Adapted from Ref. [67], with the permission of AIP Publishing.

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Fig. 8.  (Color online) (a) Schematic of the first β-Ga2O3 JBSD. (b) Forward I–V characteristic of the JBSD showing similar VON to a regular β-Ga2O3 SBD and lower VON than a p-NiO/n-Ga2O3 diode (PND). (c) Reverse breakdown characteristic of the JBSD showing higher Vbr than a regular β-Ga2O3 SBD because of the RESURF effect but lower Vbr than a PND owing to higher reverse leakage current through a Schottky junction. Reprinted with permission from Ref. [72]. Copyright 2019 SPIE.

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Fig. 9.  (Color online) (a) Schematic of a field-plated β-Ga2O3 trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga2O3 trench SBDs. In comparison with regular β-Ga2O3 SBDs employing both mesa and field plate terminations, the field-plated trench devices have much lower leakage current and a much higher Vbr. (d) Forward I–V characteristics and differential RON,sp of field-plated β-Ga2O3 trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. © 2020 IEEE. Reprinted, with permission, from Ref. [82].

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Fig. 10.  (Color online) Simulated electric-field profiles in a β-Ga2O3 trench SBD along a vertical cutline at the center of a fin under a reverse bias of –1375 V by varying (a) fin width [Wfin, see Fig. 9(a)] and (b) trench depth [dtr, see Fig. 9(a)]. © 2020 IEEE. Reprinted, with permission, from Ref. [83].

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Fig. 11.  (Color online) (a) Schematic of a field-plated β-Ga2O3 SBD with double-side-cooling flip-chip package. (b) I–V waveforms of the double-side-cooled device in surge current tests. (c) I–V loops of the double-side-cooled device. © 2021 IEEE. Reprinted, with permission, from Ref. [90].

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    Received: 30 August 2023 Revised: 16 September 2023 Online: Accepted Manuscript: 19 September 2023Corrected proof: 20 September 2023Uncorrected proof: 20 September 2023Published: 10 September 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(9): 091605
      Man Hoi Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605 ****M H Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605
      Citation:
      Man Hoi Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. Journal of Semiconductors, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605 ****
      M H Wong. A landscape of β-Ga2O3 Schottky power diodes[J]. J. Semicond, 2023, 44(9): 091605. doi: 10.1088/1674-4926/44/9/091605
      shu

      A landscape of β-Ga2O3 Schottky power diodes

      DOI: 10.1088/1674-4926/44/9/091605

      • Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

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      • Man Hoi Wong：is an Associate Professor at the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology (HKUST). He received his Ph.D. from the University of California Santa Barbara, USA, in 2009. Prof. Wong has worked at the SEMATECH corporate research consortium in the USA and the National Institute of Information and Communications Technology in Japan as a research scientist. Prior to joining HKUST, he was an Assistant Professor at the University of Massachusetts Lowell, USA. His current research focuses on ultrawide-bandgap semiconductor materials and power devices
      • Corresponding author: eemhwong@ust.hk
      • Received Date: 2023-08-30
      • Revised Date: 2023-09-16
        • Available Online: 2023-09-19

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