Fig. 1.
(Color online) (a) Schematic diagram of the device structure including GaN/InGaN/GaN TJ. (b) Equivalent circuit diagram of the device.
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| Citation: |
Jun Fang, Fan Zhang, Wenxian Yang, Aiqin Tian, Jianping Liu, Shulong Lu, Hui Yang. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2024, 45(1): 012503. doi: 10.1088/1674-4926/45/1/012503
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J Fang, F Zhang, W X Yang, A Q Tian, J P Liu, S L Lu, H Yang. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy[J]. J. Semicond, 2024, 45(1): 012503. doi: 10.1088/1674-4926/45/1/012503
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Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy
DOI: 10.1088/1674-4926/45/1/012503
More Information
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Jun Fang received a bachelor's degree from Wuhan University in 2015 and a master's degree from the Institute of Physics of the Chinese Academy of Sciences in 2018. He is currently a doctoral candidate at the Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences. His research focuses on nitride semiconductor materials and devices grown by MBE -
Wenxian Yang received his doctorate degree from the University of Science and Technology of China in 2019. He is currently a postdoctoral researcher with the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research focus on MBE-grown nitride-semiconductor materials and devices including GaN-based micro-LEDs, lasers and RTDs - Corresponding author: wxyang2014@sinano.ac.cn; hyang2006@sinano.ac.cn
- Revised Date: 2023-08-21 Available Online: 2023-11-09
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Abstract
The InGaN films and GaN/InGaN/GaN tunnel junctions (TJs) were grown on GaN templates with plasma-assisted molecular beam epitaxy. As the In content increases, the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases. V-pits and trench defects were not found in the AFM images. p++-GaN/InGaN/n++-GaN TJs were investigated for various In content, InGaN thicknesses and doping concentration in the InGaN insert layer. The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high. The current density increases with increasing In content for the 3 nm InGaN insert layer, which is achieved by reducing the depletion zone width and the height of the potential barrier. At a forward current density of 500 A/cm2, the measured voltage was 4.31 V and the differential resistance was measured to be 3.75 × 10−3 Ω·cm2 for the device with a 3 nm p++-In0.35Ga0.65N insert layer. When the thickness of the In0.35Ga0.65N layer is closer to the “balanced” thickness, the TJ current density is higher. If the thickness is too high or too low, the width of the depletion zone will increase and the current density will decrease. The undoped InGaN layer has a better performance than n-type doping in the TJ. Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices. -
References
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