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On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang and Chao Zhao

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 Corresponding author: Xueli Ma, Xueli.ma@bjsamt.org.cn; Jinjuan Xiang, Jinjuan.Xiang@bjsamt.org.cn; Guilei Wang, Guilei.Wang@bjsamt.org.cn

DOI: 10.1088/1674-4926/45/4/042301

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Abstract: The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO2. In this work, we present results of a comprehensive reliability evaluation of Hf0.5Zr0.5O2-based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.

Key words: FeRAM, HZO, imprint, reliability



[1]
Park M H, Lee Y H, Kim H J, et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv Mater, 2015, 27, 1811 doi: 10.1002/adma.201404531
[2]
Schroeder U, Park M H, Mikolajick T, et al. The fundamentals and applications of ferroelectric HfO2. Nat Rev Mater, 2022, 7, 653 doi: 10.1038/s41578-022-00431-2
[3]
Fan Z, Chen J S, Wang J. Ferroelectric HfO2-based materials for next-generation ferroelectric memories. J Adv Dielect, 2016, 6, 1630003 doi: 10.1142/S2010135X16300036
[4]
Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903. doi: 10.1063/1.3634052
[5]
Park M H, Lee Y H, Mikolajick T, et al. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Commun, 2018, 8, 795 doi: 10.1557/mrc.2018.175
[6]
Ali T, Polakowski P, Kühnel K, et al. A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 28.7. 1 doi: 10.1109/IEDM19573.2019.8993642
[7]
Sharma A, Roy K. Design space exploration of hysteresis-free HfZrOx-based negative capacitance FETs. IEEE Electron Device Lett, 2017, 38, 1165 doi: 10.1109/LED.2017.2714659
[8]
Okuno J, Kunihiro T, Konishi K, et al. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline. IEEE J Electron Devices Soc, 2021, 10, 29 doi: 10.1109/JEDS.2021.3129279
[9]
Francois T, Grenouillet L, Coignus J, et al. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 15.7. 1 doi: 10.1109/IEDM19573.2019.8993485
[10]
Kuk S H, Han S M, Kim B H, et al. An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode. IEEE Trans Electron Devices, 2022, 69, 2080 doi: 10.1109/TED.2022.3154687
[11]
Zhou Y, Chan H K, Lam C H, et al. Mechanisms of imprint effect on ferroelectric thin films. J Appl Phys, 2005, 98, 024111. doi: 10.1063/1.1984075
[12]
Yuan P, Mao G Q, Cheng Y, et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res, 2022, 15, 3667 doi: 10.1007/s12274-021-4047-y
[13]
Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[14]
Zhou Y, Zhang Y K, Yang Q, et al. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle. Comput Mater Sci, 2019, 167, 143 doi: 10.1016/j.commatsci.2019.05.041
[15]
Cheng Y, Gao Z M, Ye K H, et al. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nat Commun, 2022, 13, 645 doi: 10.1038/s41467-022-28236-5
[16]
Grimley E D, Schenk T, Sang X H, et al. Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films. Adv Elect Materials, 2016, 2, 1600173 doi: 10.1002/aelm.201600173
[17]
Sünbül A, Lehninger D, Lederer M, et al. A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing. Phys Status Solidi A, 2023, 220, 2300067. doi: 10.1002/pssa.202300067
[18]
Bao K Y, Liao J J, Yan F, et al. Enhanced endurance and imprint properties in Hf0.5Zr0.5O2– δ ferroelectric capacitors by tailoring the oxygen vacancy. ACS Appl Electron Mater, 2023, 5, 4615 doi: 10.1021/acsaelm.3c00756
[19]
Yuan P, Wang B P, Yang Y, et al. Enhanced remnant polarization (30 μC/cm2) and retention of ferroelectric Hf0.5Zr0.5O2 by NH3 plasma treatment. IEEE Electron Device Lett, 2022, 43, 1045 doi: 10.1109/LED.2022.3178867
[20]
Nie B W, Huang Y Q, Wang Y, et al. Thermal induced Pr degradation under low-voltage operation in HfZrO ferroelectric film: Phenomenon and underlying mechanism. IEEE Electron Device Lett, 2023, 44, 1456 doi: 10.1109/LED.2023.3296797
Fig. 1.  (Color online) (a) The schematic diagram of the typical FeRAM 1T−1C array, in which the transistors are controlled by WLs and the ferroelectric capacitors are controlled by PLs and BLs. (b) The readout circuit of the FeRAM 1T−1C bit-cell. (c) Timing diagrams for the read operation scheme of the 1T1C FeRAM cell for data "0" and data "1". Misreading occurs at high temperature (100 ℃).

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Fig. 2.  (Color online) (a) and (b) The sensing current and corresponding charge for bits "1" during read operations at 25 and 100 ℃. (c) For FE devices, pronounced reduction in switching polarization signal reading at elevated temperature is observed. The sense margin may decrease when operating at high temperature (100 ℃).

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Fig. 3.  (Color online) (a) The TEM image of the TiN/HZO/TiN capacitor. (b) The fabrication process of FE devices.

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Fig. 4.  (Color online) High temperature imprint test at 200 ℃ for TiN/HZO/TiN capacitors. (a) The corresponding P−V loops for HZO devices after different baking time from 0−10 000 min. (b) Evolution of extracted ∆Ec vs baking time.

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Fig. 5.  (Color online) (a) Schematic diagram of hysteresis loop of a FE capacitor caused by imprint. (b) Baking testing scheme for ferroelectric devices with different operating voltages. (c) and (d) Comparison of switching polarization of ferroelectric capacitors before and after baking. The pronounced degradation of the FeRAM memory is observed for low operation voltage devices in high temperature.

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Fig. 6.  (Color online) Evolution of remanent polarization with electric field cycling using rectangular pulses. The HZO FE capacitors exhibit three states: Less waked-up, waked-up and fatigue. (b) Imprint test flow for three samples.

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Fig. 7.  (Color online) (a) ∆Ec as a function of baking time with different number of cycles before bake when the FE device is fatigued, the degree of imprint was worse. (b)−(d) P−V hysteresis loops of the MFM capacitor with 10 nm HZO film before and after high-temperature annealing. (e)−(h) The corresponding FORCs measurements after 1000 min at 150 ℃ annealing for three cases.

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Fig. 8.  (Color online) The proposed sensing circuit to overcome the misreading problem. (a) and (b) Schematics of the solution and the circuit. (c) The working temperature of the selected Bank 1 changes from 25 to 85 ℃ and the write voltage then changes from 2 to 3.5 V.

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[1]
Park M H, Lee Y H, Kim H J, et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv Mater, 2015, 27, 1811 doi: 10.1002/adma.201404531
[2]
Schroeder U, Park M H, Mikolajick T, et al. The fundamentals and applications of ferroelectric HfO2. Nat Rev Mater, 2022, 7, 653 doi: 10.1038/s41578-022-00431-2
[3]
Fan Z, Chen J S, Wang J. Ferroelectric HfO2-based materials for next-generation ferroelectric memories. J Adv Dielect, 2016, 6, 1630003 doi: 10.1142/S2010135X16300036
[4]
Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903. doi: 10.1063/1.3634052
[5]
Park M H, Lee Y H, Mikolajick T, et al. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Commun, 2018, 8, 795 doi: 10.1557/mrc.2018.175
[6]
Ali T, Polakowski P, Kühnel K, et al. A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 28.7. 1 doi: 10.1109/IEDM19573.2019.8993642
[7]
Sharma A, Roy K. Design space exploration of hysteresis-free HfZrOx-based negative capacitance FETs. IEEE Electron Device Lett, 2017, 38, 1165 doi: 10.1109/LED.2017.2714659
[8]
Okuno J, Kunihiro T, Konishi K, et al. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline. IEEE J Electron Devices Soc, 2021, 10, 29 doi: 10.1109/JEDS.2021.3129279
[9]
Francois T, Grenouillet L, Coignus J, et al. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 15.7. 1 doi: 10.1109/IEDM19573.2019.8993485
[10]
Kuk S H, Han S M, Kim B H, et al. An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode. IEEE Trans Electron Devices, 2022, 69, 2080 doi: 10.1109/TED.2022.3154687
[11]
Zhou Y, Chan H K, Lam C H, et al. Mechanisms of imprint effect on ferroelectric thin films. J Appl Phys, 2005, 98, 024111. doi: 10.1063/1.1984075
[12]
Yuan P, Mao G Q, Cheng Y, et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res, 2022, 15, 3667 doi: 10.1007/s12274-021-4047-y
[13]
Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[14]
Zhou Y, Zhang Y K, Yang Q, et al. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle. Comput Mater Sci, 2019, 167, 143 doi: 10.1016/j.commatsci.2019.05.041
[15]
Cheng Y, Gao Z M, Ye K H, et al. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nat Commun, 2022, 13, 645 doi: 10.1038/s41467-022-28236-5
[16]
Grimley E D, Schenk T, Sang X H, et al. Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films. Adv Elect Materials, 2016, 2, 1600173 doi: 10.1002/aelm.201600173
[17]
Sünbül A, Lehninger D, Lederer M, et al. A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing. Phys Status Solidi A, 2023, 220, 2300067. doi: 10.1002/pssa.202300067
[18]
Bao K Y, Liao J J, Yan F, et al. Enhanced endurance and imprint properties in Hf0.5Zr0.5O2– δ ferroelectric capacitors by tailoring the oxygen vacancy. ACS Appl Electron Mater, 2023, 5, 4615 doi: 10.1021/acsaelm.3c00756
[19]
Yuan P, Wang B P, Yang Y, et al. Enhanced remnant polarization (30 μC/cm2) and retention of ferroelectric Hf0.5Zr0.5O2 by NH3 plasma treatment. IEEE Electron Device Lett, 2022, 43, 1045 doi: 10.1109/LED.2022.3178867
[20]
Nie B W, Huang Y Q, Wang Y, et al. Thermal induced Pr degradation under low-voltage operation in HfZrO ferroelectric film: Phenomenon and underlying mechanism. IEEE Electron Device Lett, 2023, 44, 1456 doi: 10.1109/LED.2023.3296797
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3. Guo, S., Yu, J., Wang, H. et al. Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2Ferroelectric Memory Arrays. IEEE Transactions on Electron Devices, 2024, 71(6): 3645-3650. doi:10.1109/TED.2024.3394460

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    Zhou Qianneng, Wang Yongsheng, Lai Fengchang. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation[J]. Journal of Semiconductors, 2009, 30(4): 045006. doi: 10.1088/1674-4926/30/4/045006
    Zhou Q N, Wang Y S, Lai F C. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation[J]. J. Semicond., 2009, 30(4): 045006. doi:  10.1088/1674-4926/30/4/045006.
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    Received: 17 October 2023 Revised: 28 December 2023 Online: Accepted Manuscript: 05 January 2024Uncorrected proof: 10 January 2024Published: 10 April 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(4): 042301
      Zhou Qianneng, Wang Yongsheng, Lai Fengchang. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation[J]. Journal of Semiconductors, 2009, 30(4): 045006. doi: 10.1088/1674-4926/30/4/045006 ****Zhou Q N, Wang Y S, Lai F C. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation[J]. J. Semicond., 2009, 30(4): 045006. doi:  10.1088/1674-4926/30/4/045006.
      Citation:
      Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang, Chao Zhao. On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J]. Journal of Semiconductors, 2024, 45(4): 042301. doi: 10.1088/1674-4926/45/4/042301 ****
      P Yuan, Y T Chen, L G Chai, Z Y Jiao, Q J Luan, Y Q Shen, Y Zhang, J B Leng, X L Ma, J J Xiang, G L Wang, C Zhao. On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J]. J. Semicond, 2024, 45(4): 042301. doi: 10.1088/1674-4926/45/4/042301
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      On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

      DOI: 10.1088/1674-4926/45/4/042301

      • Beijing Superstring Academy of Memory Technology, Beijing 100176, China

      More Information
      • Peng Yuan received his Ph.D. degree in Institute of Microelectronics, Chinese Academy of Sciences and University of Chinese Academy of Sciences. In 2022, he joined the Beijing Superstring Academy of Memory Technology as an assistant. His current research interests include high-k semiconductor materials and Emerging memory devices
      • Xueli Ma received her Ph.D. degree in Microelectronics and Solid-State Electronics from University of Chinese Academy of Sciences. She worked in the Institute of Microelectronics (IME), Chinese Academy of Sciences as an assistant professor and associate professor for 8 years. and joined SAMT at 2022. Her research interests cover high-k/metal gate stack of advanced CMOS, high-mobility channel SiGe/Ge-based processing and device technology, and oxide semiconductor-based TFTs. Emerging
      • Jinjuan Xiang received her Ph.D. degree in Microelectronics and Solid-State Electronics from University of Chinese Academy of Sciences. Her work focused on ALD process and material especially for Nano CMOS and DRAM application
      • Guilei Wang received his Bachelor's degree in 2005 and his PhD in 2016 from the University of Chinese Academy of Sciences. He has been worked as a professor at the Integrated Circuit Advanced Process Center at the Chinese Academy of Sciences until 2021. In October 2021, he joined the Beijing Superstring Academy of Memory Technology as a full professor. His research interests are focused on new materials, devices, and process integration for the IC industry
      • Corresponding author: Xueli.ma@bjsamt.org.cn; Jinjuan.Xiang@bjsamt.org.cn; Guilei.Wang@bjsamt.org.cn
      • Received Date: 2023-10-17
      • Revised Date: 2023-12-28
        • Available Online: 2024-01-05

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