J. Semicond. > 2024, Volume 45 > Issue 4 > 042301
|

ARTICLES

On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang and Chao Zhao

+ Author Affiliations

 Corresponding author: Xueli Ma, Xueli.ma@bjsamt.org.cn; Jinjuan Xiang, Jinjuan.Xiang@bjsamt.org.cn; Guilei Wang, Guilei.Wang@bjsamt.org.cn

DOI: 10.1088/1674-4926/45/4/042301

PDF

Turn off MathJax

Abstract: The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO2. In this work, we present results of a comprehensive reliability evaluation of Hf0.5Zr0.5O2-based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.

Key words: FeRAM, HZO, imprint, reliability



[1]
Park M H, Lee Y H, Kim H J, et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv Mater, 2015, 27, 1811 doi: 10.1002/adma.201404531
[2]
Schroeder U, Park M H, Mikolajick T, et al. The fundamentals and applications of ferroelectric HfO2. Nat Rev Mater, 2022, 7, 653 doi: 10.1038/s41578-022-00431-2
[3]
Fan Z, Chen J S, Wang J. Ferroelectric HfO2-based materials for next-generation ferroelectric memories. J Adv Dielect, 2016, 6, 1630003 doi: 10.1142/S2010135X16300036
[4]
Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903. doi: 10.1063/1.3634052
[5]
Park M H, Lee Y H, Mikolajick T, et al. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Commun, 2018, 8, 795 doi: 10.1557/mrc.2018.175
[6]
Ali T, Polakowski P, Kühnel K, et al. A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 28.7. 1 doi: 10.1109/IEDM19573.2019.8993642
[7]
Sharma A, Roy K. Design space exploration of hysteresis-free HfZrOx-based negative capacitance FETs. IEEE Electron Device Lett, 2017, 38, 1165 doi: 10.1109/LED.2017.2714659
[8]
Okuno J, Kunihiro T, Konishi K, et al. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline. IEEE J Electron Devices Soc, 2021, 10, 29 doi: 10.1109/JEDS.2021.3129279
[9]
Francois T, Grenouillet L, Coignus J, et al. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 15.7. 1 doi: 10.1109/IEDM19573.2019.8993485
[10]
Kuk S H, Han S M, Kim B H, et al. An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode. IEEE Trans Electron Devices, 2022, 69, 2080 doi: 10.1109/TED.2022.3154687
[11]
Zhou Y, Chan H K, Lam C H, et al. Mechanisms of imprint effect on ferroelectric thin films. J Appl Phys, 2005, 98, 024111. doi: 10.1063/1.1984075
[12]
Yuan P, Mao G Q, Cheng Y, et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res, 2022, 15, 3667 doi: 10.1007/s12274-021-4047-y
[13]
Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[14]
Zhou Y, Zhang Y K, Yang Q, et al. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle. Comput Mater Sci, 2019, 167, 143 doi: 10.1016/j.commatsci.2019.05.041
[15]
Cheng Y, Gao Z M, Ye K H, et al. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nat Commun, 2022, 13, 645 doi: 10.1038/s41467-022-28236-5
[16]
Grimley E D, Schenk T, Sang X H, et al. Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films. Adv Elect Materials, 2016, 2, 1600173 doi: 10.1002/aelm.201600173
[17]
Sünbül A, Lehninger D, Lederer M, et al. A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing. Phys Status Solidi A, 2023, 220, 2300067. doi: 10.1002/pssa.202300067
[18]
Bao K Y, Liao J J, Yan F, et al. Enhanced endurance and imprint properties in Hf0.5Zr0.5O2– δ ferroelectric capacitors by tailoring the oxygen vacancy. ACS Appl Electron Mater, 2023, 5, 4615 doi: 10.1021/acsaelm.3c00756
[19]
Yuan P, Wang B P, Yang Y, et al. Enhanced remnant polarization (30 μC/cm2) and retention of ferroelectric Hf0.5Zr0.5O2 by NH3 plasma treatment. IEEE Electron Device Lett, 2022, 43, 1045 doi: 10.1109/LED.2022.3178867
[20]
Nie B W, Huang Y Q, Wang Y, et al. Thermal induced Pr degradation under low-voltage operation in HfZrO ferroelectric film: Phenomenon and underlying mechanism. IEEE Electron Device Lett, 2023, 44, 1456 doi: 10.1109/LED.2023.3296797
Fig. 1.  (Color online) (a) The schematic diagram of the typical FeRAM 1T−1C array, in which the transistors are controlled by WLs and the ferroelectric capacitors are controlled by PLs and BLs. (b) The readout circuit of the FeRAM 1T−1C bit-cell. (c) Timing diagrams for the read operation scheme of the 1T1C FeRAM cell for data "0" and data "1". Misreading occurs at high temperature (100 ℃).

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) and (b) The sensing current and corresponding charge for bits "1" during read operations at 25 and 100 ℃. (c) For FE devices, pronounced reduction in switching polarization signal reading at elevated temperature is observed. The sense margin may decrease when operating at high temperature (100 ℃).

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) The TEM image of the TiN/HZO/TiN capacitor. (b) The fabrication process of FE devices.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) High temperature imprint test at 200 ℃ for TiN/HZO/TiN capacitors. (a) The corresponding P−V loops for HZO devices after different baking time from 0−10 000 min. (b) Evolution of extracted ∆Ec vs baking time.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) (a) Schematic diagram of hysteresis loop of a FE capacitor caused by imprint. (b) Baking testing scheme for ferroelectric devices with different operating voltages. (c) and (d) Comparison of switching polarization of ferroelectric capacitors before and after baking. The pronounced degradation of the FeRAM memory is observed for low operation voltage devices in high temperature.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) Evolution of remanent polarization with electric field cycling using rectangular pulses. The HZO FE capacitors exhibit three states: Less waked-up, waked-up and fatigue. (b) Imprint test flow for three samples.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) (a) ∆Ec as a function of baking time with different number of cycles before bake when the FE device is fatigued, the degree of imprint was worse. (b)−(d) P−V hysteresis loops of the MFM capacitor with 10 nm HZO film before and after high-temperature annealing. (e)−(h) The corresponding FORCs measurements after 1000 min at 150 ℃ annealing for three cases.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  (Color online) The proposed sensing circuit to overcome the misreading problem. (a) and (b) Schematics of the solution and the circuit. (c) The working temperature of the selected Bank 1 changes from 25 to 85 ℃ and the write voltage then changes from 2 to 3.5 V.

DownLoad: Full-Size Img PowerPoint
[1]
Park M H, Lee Y H, Kim H J, et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv Mater, 2015, 27, 1811 doi: 10.1002/adma.201404531
[2]
Schroeder U, Park M H, Mikolajick T, et al. The fundamentals and applications of ferroelectric HfO2. Nat Rev Mater, 2022, 7, 653 doi: 10.1038/s41578-022-00431-2
[3]
Fan Z, Chen J S, Wang J. Ferroelectric HfO2-based materials for next-generation ferroelectric memories. J Adv Dielect, 2016, 6, 1630003 doi: 10.1142/S2010135X16300036
[4]
Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903. doi: 10.1063/1.3634052
[5]
Park M H, Lee Y H, Mikolajick T, et al. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Commun, 2018, 8, 795 doi: 10.1557/mrc.2018.175
[6]
Ali T, Polakowski P, Kühnel K, et al. A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 28.7. 1 doi: 10.1109/IEDM19573.2019.8993642
[7]
Sharma A, Roy K. Design space exploration of hysteresis-free HfZrOx-based negative capacitance FETs. IEEE Electron Device Lett, 2017, 38, 1165 doi: 10.1109/LED.2017.2714659
[8]
Okuno J, Kunihiro T, Konishi K, et al. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline. IEEE J Electron Devices Soc, 2021, 10, 29 doi: 10.1109/JEDS.2021.3129279
[9]
Francois T, Grenouillet L, Coignus J, et al. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 15.7. 1 doi: 10.1109/IEDM19573.2019.8993485
[10]
Kuk S H, Han S M, Kim B H, et al. An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode. IEEE Trans Electron Devices, 2022, 69, 2080 doi: 10.1109/TED.2022.3154687
[11]
Zhou Y, Chan H K, Lam C H, et al. Mechanisms of imprint effect on ferroelectric thin films. J Appl Phys, 2005, 98, 024111. doi: 10.1063/1.1984075
[12]
Yuan P, Mao G Q, Cheng Y, et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res, 2022, 15, 3667 doi: 10.1007/s12274-021-4047-y
[13]
Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[14]
Zhou Y, Zhang Y K, Yang Q, et al. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle. Comput Mater Sci, 2019, 167, 143 doi: 10.1016/j.commatsci.2019.05.041
[15]
Cheng Y, Gao Z M, Ye K H, et al. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nat Commun, 2022, 13, 645 doi: 10.1038/s41467-022-28236-5
[16]
Grimley E D, Schenk T, Sang X H, et al. Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films. Adv Elect Materials, 2016, 2, 1600173 doi: 10.1002/aelm.201600173
[17]
Sünbül A, Lehninger D, Lederer M, et al. A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing. Phys Status Solidi A, 2023, 220, 2300067. doi: 10.1002/pssa.202300067
[18]
Bao K Y, Liao J J, Yan F, et al. Enhanced endurance and imprint properties in Hf0.5Zr0.5O2– δ ferroelectric capacitors by tailoring the oxygen vacancy. ACS Appl Electron Mater, 2023, 5, 4615 doi: 10.1021/acsaelm.3c00756
[19]
Yuan P, Wang B P, Yang Y, et al. Enhanced remnant polarization (30 μC/cm2) and retention of ferroelectric Hf0.5Zr0.5O2 by NH3 plasma treatment. IEEE Electron Device Lett, 2022, 43, 1045 doi: 10.1109/LED.2022.3178867
[20]
Nie B W, Huang Y Q, Wang Y, et al. Thermal induced Pr degradation under low-voltage operation in HfZrO ferroelectric film: Phenomenon and underlying mechanism. IEEE Electron Device Lett, 2023, 44, 1456 doi: 10.1109/LED.2023.3296797
1

Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 °C and endurance of 1 × 1012 cycles towards automotive non-volatile RAM applications

Dinggui Zeng, Fantao Meng, Ruofei Chen, Yang Gao, Yihui Sun, et al.

Journal of Semiconductors, 2025, 46(3): 032301. doi: 10.1088/1674-4926/24090037
2

Dynamic avalanche reliability enhancement of FS-IGBT under unclamped inductive switching

Jingping Zhang, Houcai Luo, Huan Wu, Bofeng Zheng, Xianping Chen, et al.

Journal of Semiconductors. doi: 10.1088/1674-4926/25020006
3

Mechanism investigation of pre-existing void-induced multi-modal electro-migration behavior

Zhaoxiang Han, Weihai Fan

Journal of Semiconductors, 2022, 43(5): 054103. doi: 10.1088/1674-4926/43/5/054103
4

A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Xin Yang, Chen Luo, Xiyue Tian, Fang Liang, Yin Xia, et al.

Journal of Semiconductors, 2021, 42(1): 013102. doi: 10.1088/1674-4926/42/1/013102
5

Reliability evaluation on sense-switch p-channel flash

Side Song, Guozhu Liu, Hailiang Zhang, Lichao Chao, Jinghe Wei, et al.

Journal of Semiconductors, 2021, 42(8): 084101. doi: 10.1088/1674-4926/42/8/084101
6

Impact of varying carbon concentration in SiC S/D asymmetric dual-k spacer for high performance and reliable FinFET

Maisagalla Gopal, Atul Awadhiya, Nandakishor Yadav, S. K. Vishvakarma, Vaibhav Neema, et al.

Journal of Semiconductors, 2018, 39(10): 104001. doi: 10.1088/1674-4926/39/10/104001
7

Reliability analysis of magnetic logic interconnect wire subjected to magnet edge imperfections

Bin Zhang, Xiaokuo Yang, Jiahao Liu, Weiwei Li, Jie Xu, et al.

Journal of Semiconductors, 2018, 39(2): 024004. doi: 10.1088/1674-4926/39/2/024004
8

Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique

Tian Wang, Xiaoxin Cui, Yewen Ni, Kai Liao, Nan Liao, et al.

Journal of Semiconductors, 2017, 38(4): 044005. doi: 10.1088/1674-4926/38/4/044005
9

Total dose responses and reliability issues of 65 nm NMOSFETs

Dezhao Yu, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xuefeng Yu, et al.

Journal of Semiconductors, 2016, 37(6): 064016. doi: 10.1088/1674-4926/37/6/064016
10

Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

Xiangming Xu, Jingfeng Huang, Han Yu, Wensheng Qian, Zhengliang Zhou, et al.

Journal of Semiconductors, 2015, 36(6): 064013. doi: 10.1088/1674-4926/36/6/064013
11

The expression correction of transistor current gain and its application in reliability assessment

Haochun Qi, Xiaoling Zhang, Xuesong Xie, Li Zhao, Chengju Chen, et al.

Journal of Semiconductors, 2014, 35(9): 094008. doi: 10.1088/1674-4926/35/9/094008
12

Long-term storage life of light source modules by temperature cycling accelerated life test

Ningning Sun, Manqing Tan, Ping Li, Jian Jiao, Xiaofeng Guo, et al.

Journal of Semiconductors, 2014, 35(5): 054010. doi: 10.1088/1674-4926/35/5/054010
13

Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

Zhen Yang, Jinyan Wang, Zhe Xu, Xiaoping Li, Bo Zhang, et al.

Journal of Semiconductors, 2014, 35(1): 014007. doi: 10.1088/1674-4926/35/1/014007
14

Analysis of reliability factors of MEMS disk resonator under the strong inertial impact

Linxi Dong, Quan Yu, Jinyan Bao, Jiaping Tao

Journal of Semiconductors, 2014, 35(7): 074014. doi: 10.1088/1674-4926/35/7/074014
15

Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench

Zhigang Wang, Bo Zhang, Zhaoji Li

Journal of Semiconductors, 2013, 34(7): 074006. doi: 10.1088/1674-4926/34/7/074006
16

Electroplated indium bump arrays and the bonding reliability

Huang Qiuping, Xu Gaowei, Quan Gang, Yuan Yuan, Luo Le, et al.

Journal of Semiconductors, 2010, 31(11): 116004. doi: 10.1088/1674-4926/31/11/116004
17

Wafer Direct Bonding Based on UV Exposure

Ma Canghai, Liao Guanglan, Shi Tielin, Tang Zirong, Liu Shiyuan, et al.

Journal of Semiconductors, 2008, 29(7): 1369-1372.

18

Characterization and Reliability of Thin Film Resistors for MMICs Application Based on AlGaN/GaN HEMTs

Yao Xiaojiang, Pu Yan, Liu Xinyu, Wu Weichao

Journal of Semiconductors, 2008, 29(7): 1246-1248.

19

Analyses in Reliability of GaN-Based High Power Light Emitting Diodes

Chen Yu, Wang Liangchen, Yi Xiaoyan, Wang Libin, Liu Zhiqiang, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 500-503.

20

High-Reliability 16×16 SOI Thermo-Optic Switch Matrix’

Li Yuntao, Yu Jinzhong, Li ZhiYang, Chen Shaowu

Chinese Journal of Semiconductors , 2007, 28(S1): 513-515.

1. Zheng, S., Zhou, J., Wang, X. et al. Ferroelectric Reconfigurable FET Memory on Fully Depleted Silicon-on-Insulator Platform. IEEE Electron Device Letters, 2025, 46(2): 163-166. doi:10.1109/LED.2024.3513352
2. Kim, S.Y., Han, D.H., Yun, J. et al. Interfacial Reaction Engineering for Use in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors Using N2 + H2 Gas Pretreatment. ACS Applied Electronic Materials, 2025. doi:10.1021/acsaelm.5c00045
3. Guo, S., Yu, J., Wang, H. et al. Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2Ferroelectric Memory Arrays. IEEE Transactions on Electron Devices, 2024, 71(6): 3645-3650. doi:10.1109/TED.2024.3394460

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1564 Times PDF downloads: 210 Times Cited by: 3 Times

    History

    Received: 17 October 2023 Revised: 28 December 2023 Online: Accepted Manuscript: 05 January 2024Uncorrected proof: 10 January 2024Published: 10 April 2024

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2024  >  45(4): 042301
      Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang, Chao Zhao. On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J]. Journal of Semiconductors, 2024, 45(4): 042301. doi: 10.1088/1674-4926/45/4/042301 ****P Yuan, Y T Chen, L G Chai, Z Y Jiao, Q J Luan, Y Q Shen, Y Zhang, J B Leng, X L Ma, J J Xiang, G L Wang, C Zhao. On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J]. J. Semicond, 2024, 45(4): 042301. doi: 10.1088/1674-4926/45/4/042301
      Citation:
      Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang, Chao Zhao. On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J]. Journal of Semiconductors, 2024, 45(4): 042301. doi: 10.1088/1674-4926/45/4/042301 ****
      P Yuan, Y T Chen, L G Chai, Z Y Jiao, Q J Luan, Y Q Shen, Y Zhang, J B Leng, X L Ma, J J Xiang, G L Wang, C Zhao. On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory[J]. J. Semicond, 2024, 45(4): 042301. doi: 10.1088/1674-4926/45/4/042301
      shu

      On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

      DOI: 10.1088/1674-4926/45/4/042301

      • Beijing Superstring Academy of Memory Technology, Beijing 100176, China

      More Information
      • Peng Yuan received his Ph.D. degree in Institute of Microelectronics, Chinese Academy of Sciences and University of Chinese Academy of Sciences. In 2022, he joined the Beijing Superstring Academy of Memory Technology as an assistant. His current research interests include high-k semiconductor materials and Emerging memory devices
      • Xueli Ma received her Ph.D. degree in Microelectronics and Solid-State Electronics from University of Chinese Academy of Sciences. She worked in the Institute of Microelectronics (IME), Chinese Academy of Sciences as an assistant professor and associate professor for 8 years. and joined SAMT at 2022. Her research interests cover high-k/metal gate stack of advanced CMOS, high-mobility channel SiGe/Ge-based processing and device technology, and oxide semiconductor-based TFTs. Emerging
      • Jinjuan Xiang received her Ph.D. degree in Microelectronics and Solid-State Electronics from University of Chinese Academy of Sciences. Her work focused on ALD process and material especially for Nano CMOS and DRAM application
      • Guilei Wang received his Bachelor's degree in 2005 and his PhD in 2016 from the University of Chinese Academy of Sciences. He has been worked as a professor at the Integrated Circuit Advanced Process Center at the Chinese Academy of Sciences until 2021. In October 2021, he joined the Beijing Superstring Academy of Memory Technology as a full professor. His research interests are focused on new materials, devices, and process integration for the IC industry
      • Corresponding author: Xueli.ma@bjsamt.org.cn; Jinjuan.Xiang@bjsamt.org.cn; Guilei.Wang@bjsamt.org.cn
      • Received Date: 2023-10-17
      • Revised Date: 2023-12-28
        • Available Online: 2024-01-05

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return