Citation: 
Jinye Wang, Jun Liu, Zhenxin Zhao. A novel smallsignal equivalent circuit model for GaN HEMTs incorporating a dualfieldplate[J]. Journal of Semiconductors, 2024, 45(5): 052302. doi: 10.1088/16744926/45/5/052302
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J Y Wang, J Liu, and Z X Zhao, A novel smallsignal equivalent circuit model for GaN HEMTs incorporating a dualfieldplate[J]. J. Semicond., 2024, 45(5), 052302 doi: 10.1088/16744926/45/5/052302

A novel smallsignal equivalent circuit model for GaN HEMTs incorporating a dualfieldplate
doi: 10.1088/16744926/45/5/052302
More Information
Abstract
An accurate and novel smallsignal equivalent circuit model for GaN highelectronmobility transistors (HEMTs) is proposed, which considers a dualfieldplate (FP) made up of a gateFP and a sourceFP. The equivalent circuit of the overall model is composed of parasitic elements, intrinsic transistors, gateFP, and sourceFP networks. The equivalent circuit of the gateFP is identical to that of the intrinsic transistor. In order to simplify the complexity of the model, a series combination of a resistor and a capacitor is employed to represent the sourceFP. The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit. The verification is carried out on a 4 × 250 μm GaN HEMT device with a gateFP and a sourceFP in a 0.45 μm technology. Compared with the classic model, the proposed novel smallsignal model shows closer agreement with measured Sparameters in the range of 1.0 to 18.0 GHz. 
References
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