J. Semicond. > 2024, Volume 45 > Issue 5 > 052501
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ARTICLES

Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Horacio Irán Solís-Cisneros1, Carlos Alberto Hernández-Gutiérrez1, , Enrique Campos-González2 and Máximo López-López3

+ Author Affiliations

 Corresponding author: Carlos Alberto Hernández-Gutiérrez, carlos.hg@tuxtla.tecnm.mx

DOI: 10.1088/1674-4926/45/5/052501

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Abstract: This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy (MME) with a thickness of 180 nm on Si(111) substrates using AlN as buffer layers. Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering, as confirmed by X-ray diffraction (XRD). Cathodoluminescence measurements revealed ultraviolet (UV) range emissions. Meanwhile, Hall effect measurements indicated a maximum hole mobility of 146 cm2/(V∙s), corresponding to a free hole concentration of 1.23 × 1019 cm−3. The samples were analyzed by X-ray photoelectron spectroscopy (XPS) estimating the alloy composition and extracting the Fermi level by valence band analysis. Mg-doped AlInN layers were studied for use as the electron-blocking layer (EBL) in LED structures. We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence, carrier concentration, and electric field, using SILVACO Atlas. The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE. Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence, carrier concentration, and electric field.

Key words: metal-modulated epitaxy, AlInN, DUV-LED, EBL, simulation



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Fig. 1.  (Color online) (a) The proposed structure obtained by MME, and (b) opening−closing shutter sequence used for growing the AlInN layer doped with Mg.

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Fig. 2.  (Color online) Change in the substrate temperature over the complete growth process. The insets show the RHEED patterns at different stages of the growth.

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Fig. 3.  (Color online) XRD measurement for AlInN/AlN heterostructure grown on Si substrate.

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Fig. 4.  (Color online) CL spectra for samples (a) 694 and (b) 695 of Mg-doped AlInN layers grown by MME. (c) Comparison between Al composition estimation from CL and XRD[37−39].

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Fig. 5.  (Color online) XPS peaks of Al2p, In3d, and N1s for sample 694.

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Fig. 6.  (Color online) Comparison of the effect of the etching time in the VBM analysis for the two samples (a) 694 and (b) 695.

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Fig. 7.  (Color online) (a) Cross-section SEM image for sample 694, (b) surface SEM image for sample 694, (c) AFM imaging of sample 694, (d) cross-section SEM image for sample 695, (e) surface SEM image for sample 695, and (f) AFM imaging of sample 695.

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Fig. 8.  (Color online) UV−C LED proposed structure for simulation.

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Fig. 9.  (Color online) (a) Electric field and (b) Electron concentration in the LED structure as a function of the In content in the EBL AlxIn1−xN with x = 0.84–0.90 at 6 V forward bias.

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Fig. 10.  (Color online) Description of the effect of the In content in the AlInN-based EBL on (a) the radiative recombination rate, and (b) power spectral density.

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Fig. 11.  (Color online) Effect of the In content in the potential across the EBL as a mechanism for electron blocking and hole accumulation in the EBL interfaces.

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Fig. 12.  (Color online) Comparison for AlGaN-based versus AlInN-based electron blocking layer using 0.84 Al molar fraction for the same LED structure for (a) total electron concentration, (b) total hole concentration, and (c) band diagram schematization.

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Table 1.   Summary of results from XPS analysis of AlInN layers obtained by MME.

SampleElementAtomic (%)x in ternary alloy AlxIn1−xN
694Al45.760.85
In7.660.14
N46.57−
Mg<0.01−
695Al44.740.83
In9.170.17
N46.08−
Mg<0.01−
DownLoad: CSV

Table 2.   Simulation setup parameters from Refs. [38, 48, 49] (except when it is indicated).

Parameter AlN GaN InN
Eg 6.2 eV 3.4 eV 0.7 eV
Affinity 1.4 eV 4.0 eV 5.5 eV
Permittivity 8.5 8.9 15.3
Electron mobility 110 cm/(V∙s) 300 cm/(V∙s) 2000 cm/(V∙s)
Hole mobility 10 cm/(V∙s) 14 cm/(V∙s) 20 cm/(V∙s)[50]
Bowing factor 1.348 eV 1.775 eV 3.678 eV
DownLoad: CSV
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[23]
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[24]
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[25]
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[32]
Frei K, Trejo-Hernández R, Schütt S, et al. Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE. Jpn J Appl Phys, 2019, 58, SC1045 doi: 10.7567/1347-4065/ab124f
[33]
Hernández-Gutiérrez C A, Casallas-Moreno Y L, Rangel-Kuoppa V T, et al. Study of the heavily p-type doping of cubic GaN with Mg. Sci Rep, 2020, 10, 16858 doi: 10.1038/s41598-020-73872-w
[34]
Jian Z, Hejing W. The physical meanings of 5 basic parameters for an X-ray diffraction peak and their application. Chinese J Geochemistry, 2003, 22, 38 doi: 10.1007/BF02831544
[35]
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    Received: 04 November 2023 Revised: 31 December 2023 Online: Accepted Manuscript: 18 January 2024Uncorrected proof: 24 January 2024Published: 10 May 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(5): 052501
      Horacio Irán Solís-Cisneros, Carlos Alberto Hernández-Gutiérrez, Enrique Campos-González, Máximo López-López. Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes[J]. Journal of Semiconductors, 2024, 45(5): 052501. doi: 10.1088/1674-4926/45/5/052501 ****H I Solís-Cisneros, C A Hernández-Gutiérrez, E Campos-González, and M López-López, Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes[J]. J. Semicond., 2024, 45(5), 052501 doi: 10.1088/1674-4926/45/5/052501
      Citation:
      Horacio Irán Solís-Cisneros, Carlos Alberto Hernández-Gutiérrez, Enrique Campos-González, Máximo López-López. Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes[J]. Journal of Semiconductors, 2024, 45(5): 052501. doi: 10.1088/1674-4926/45/5/052501 ****
      H I Solís-Cisneros, C A Hernández-Gutiérrez, E Campos-González, and M López-López, Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes[J]. J. Semicond., 2024, 45(5), 052501 doi: 10.1088/1674-4926/45/5/052501
      shu

      Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

      DOI: 10.1088/1674-4926/45/5/052501
      • 1.

        Optomechatronics Group, Tecnológico Nacional de México Campus Tuxtla Gutiérrez, carretera Panamericana 1080, C. P. 29050, Tuxtla Gutiérrez, Chiapas, México

      • 2.

        Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca s/n, C.P. 52750, La Marquesa Ocoyoacac, México

      • 3.

        Departamento de Física, Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional 2508, San Pedro Zacatenco, Gustavo A. Madero, 07360 Ciudad de México, CDMX, México

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      • Horacio Irán Solís-Cisneros is a researcher in electrical engineering and optimization of energy consumption from renewable energies up to materials sciences from the Tecnológico Nacional de México. He mastered renewable energies in photovoltaics and his contributions include developing control algorithms for photovoltaic arrays. Moreover, as a postgraduate student, He is currently analyzing UVC LEDs simulating semiconductor devices and studying material synthesis using physical approaches such as thermal oxidation and molecular beam epitaxy. His work covers topics such as the characterization of nanotextured formations, Ⅲ−N semiconductors, and systems optimization in fields that go from solar cell development to PV systems
      • Carlos Alberto Hernández-Gutiérrez is a Ph. D. in Nanoscience and Nanotechnology from the CINVESTAV-IPN in Mexico, developing research as a postgraduate at the University of Texas at Dallas in photolithography. He is an M. Sc. in Electrical Engineering from the solid state electronics section in the same institution in the field of semiconductors devices, studying the transport properties in GaN/AlGaN-based High Electron Mobility Transistors, developing InGaN-based solar cells, and designing, synthesizing, and characterizing new structures for solar cells and photodiodes. His research as a full-time professor in Tecnológico Nacional de México also covers also integrated circuits design, and implementation of light emission systems based on semiconductor-based LEDs
      • Enrique Campos-González specializes in researching nanostructured materials, delving into areas such as nanoparticle genotoxicity and thin film deposition using pulsed laser techniques. His work emphasizes practical applications, particularly in the context of advanced characterization methods like TEM, SEM, and XPS. His contributions significantly advance the understanding and practical use of nanomaterials in various applications
      • Máximo López-López has a Ph. D. from the Toyohashi University of Japan since 1992, and an M. Sc. from the CINVESTAV-IPN México. He is the leader of the laboratory of molecular beam Epitaxy in the Physics department at this institution. His research is currently on the synthesis of semiconductor nanostructures, fabrication, and characterization of low-dimensional systems such as quantum Wells, nanowires, and quantum dots, growing heterostructures based on Ⅲ−Ⅴ/Si and Ⅲ−N/GaAs; semiconductor structures with magnetic properties based on diluted semiconductors such as GaMnAs, and GaMnN; and the growth of solar cell structures based on Ⅲ−Ⅴ materials
      • Corresponding author: carlos.hg@tuxtla.tecnm.mx
      • Received Date: 2023-11-04
      • Revised Date: 2023-12-31
        • Available Online: 2024-01-18

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