Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1444-1449
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高电流密度GAT型功率开关晶体管的结构设计优化

王哲 , 吴郁 , 亢宝位 and 程序

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Key words: 栅辅助晶体管, 最大集电极电流, 版图, 扩散表面浓度

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1444-1449
      王哲, 吴郁, 亢宝位, 程序. 高电流密度GAT型功率开关晶体管的结构设计优化[J]. 半导体学报(英文版), 2001, 22(11): 1444-1449.
      Citation:
      王哲, 吴郁, 亢宝位, 程序. 高电流密度GAT型功率开关晶体管的结构设计优化[J]. 半导体学报(英文版), 2001, 22(11): 1444-1449.
      shu

      • Received Date: 2015-08-20

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