Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 237-241
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短栅GaAs MESFET中电子饱和速度

杨悦非 and 王渭源

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 237-241
      杨悦非, 王渭源. 短栅GaAs MESFET中电子饱和速度[J]. 半导体学报(英文版), 1986, 7(3): 237-241.
      Citation:
      杨悦非, 王渭源. 短栅GaAs MESFET中电子饱和速度[J]. 半导体学报(英文版), 1986, 7(3): 237-241.
      shu

      • Received Date: 2015-08-20

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