Chin. J. Semicond. > 1995, Volume 16 > Issue 11 > 879-884

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GaSb晶体的高能N~＋注入及其光学性质

郑玉祥，苏毅，周仕明，马宏舟，陈良尧，郑安生，钱佑华，林成鲁，何冶平

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(11): 879-884
      郑玉祥，苏毅，周仕明，马宏舟，陈良尧，郑安生，钱佑华，林成鲁，何冶平. GaSb晶体的高能N~＋注入及其光学性质[J]. 半导体学报(英文版), 1995, 16(11): 879-884.
      Citation:
      郑玉祥，苏毅，周仕明，马宏舟，陈良尧，郑安生，钱佑华，林成鲁，何冶平. GaSb晶体的高能N~＋注入及其光学性质[J]. 半导体学报(英文版), 1995, 16(11): 879-884.
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      • Received Date: 2015-08-19

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