Citation: |
Hao Huijuan, Zhang Yulin, Lu Wenjuan, Wei Qiang. Three-Dimensional Fabrication by Electron Beam Lithography Using Overlapped Increment Scanning[J]. Journal of Semiconductors, 2006, 27(7): 1326-1330.
****
Hao H J, Zhang Y L, Lu W J, Wei Q. Three-Dimensional Fabrication by Electron Beam Lithography Using Overlapped Increment Scanning[J]. Chin. J. Semicond., 2006, 27(7): 1326.
|
Three-Dimensional Fabrication by Electron Beam Lithography Using Overlapped Increment Scanning
-
Abstract
Overlapped increment scanning in electron beam lithography and the calculation methods for the exposure doses and the etching depth and sensitivity are presented for the structural characteristics of three-dimensional patterns as well as the self-devised pattern generator of an e-beam lithography system.Based on the calculated dose relations according to the scanning mode,the exposure experiments are conducted in an SDS-3 e-beam lithography system.After the development,the distinct three-dimensional structures of the conic of trapezoid 1 and the conic are obtained.Overlapped increment scanning therefore can be used for three-dimensional fabrication,and the calculation of the relations between exposure doses and the etching depth and sensitivity can provide the practical parameters for it. -
References
-
Proportional views