Chin. J. Semicond. > 1987, Volume 8 > Issue 3 > 329-333
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GaAs-GaAlAs多量子阱结构发光的激子性质和温度特性

徐仲英 , 梁基本 , 许继宗 , 郑宝真 , 李玉璋 , 徐俊英 , 曾一平 and 葛惟锟

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(3): 329-333
      徐仲英, 梁基本, 许继宗, 郑宝真, 李玉璋, 徐俊英, 曾一平, 葛惟锟. GaAs-GaAlAs多量子阱结构发光的激子性质和温度特性[J]. 半导体学报(英文版), 1987, 8(3): 329-333.
      Citation:
      徐仲英, 梁基本, 许继宗, 郑宝真, 李玉璋, 徐俊英, 曾一平, 葛惟锟. GaAs-GaAlAs多量子阱结构发光的激子性质和温度特性[J]. 半导体学报(英文版), 1987, 8(3): 329-333.
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      • Received Date: 2015-08-19

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