Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 70-73
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利用FN振荡电流估计金属-氧化物-半导体场效应管Si-SiO_2界面宽度

杨尧 and 毛凌锋

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Key words: FN隧穿电流, MOSFET, 界面

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 70-73
      杨尧, 毛凌锋. 利用FN振荡电流估计金属-氧化物-半导体场效应管Si-SiO_2界面宽度[J]. 半导体学报(英文版), 2002, 23(1): 70-73.
      Citation:
      杨尧, 毛凌锋. 利用FN振荡电流估计金属-氧化物-半导体场效应管Si-SiO_2界面宽度[J]. 半导体学报(英文版), 2002, 23(1): 70-73.
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      • Received Date: 2015-08-19

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