| Citation: |
Zhang Haipeng, Wang Qin, Sun Lingling, Gao Mingyu, Li Wenjun, Lü Youhua, Liu Guohua, Wang Jie. Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode[J]. Journal of Semiconductors, 2006, 27(S1): 279-282.
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Zhang H P, Wang Q, Sun L L, Gao M Y, Li W J, Lü Y, Liu G H, Wang J. Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode[J]. Chin. J. Semicond., 2006, 27(13): 279.
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Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode
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Abstract
To explore the way to realize SOI LIGBT/LDMOS devices and PIC with VLSI technology,the structure and fabricating method for the devices integrated with anti-ESD diode are presented,according to which the equivalent circuits at resistive load are given.Then the process flowchart is designed.The main factors which impact the design of parameters related to anti-ESD diode are discussed in details.At last,the requirements for process control are introduced simply.-
Keywords:
- ESD,
- SOI,
- LIGBT/LDMOS,
- device structure,
- technology,
- PIC
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References
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Proportional views
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