Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1437-1441
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低温注入硅片中的锗在快速热处理后的再分布

肖清华 and 屠海令

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Key words: 硅锗合金, 低温离子注入, 快速热处理, 卢瑟福背散射技术, 二次离子质谱技术

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1437-1441
      肖清华, 屠海令. 低温注入硅片中的锗在快速热处理后的再分布[J]. 半导体学报(英文版), 2004, 25(11): 1437-1441.
      Citation:
      肖清华, 屠海令. 低温注入硅片中的锗在快速热处理后的再分布[J]. 半导体学报(英文版), 2004, 25(11): 1437-1441.
      shu

      • Received Date: 2015-08-19

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