Chin. J. Semicond. > 2006, Volume 27 > Issue 12 > 2167-2172
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Design and Fabrication of a Planar RTD and Its MOBILE

Guo Weilian, Liang Huilai, Zhang Shilin, Hu Liuchang, Mao Luhong, Song Ruiliang, Niu Pingjuan, Wang Wei, Shang Yuehui, Wang Guoquan and Feng Zhen

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Abstract: A novel device structure for planar resonant tunneling diode (PRTD) is proposed.Semi-insulated (SI) GaAs is replaced with n＋ GaAs as substrate,and amorphous GaAs obtained by Boron ion implantation is employed as the electrical insulator in the devices.The PRTD and Monostable-Bistable transition logic element (MOBILE) formed by the PRTD are designed and fabricated successfully.This device structure can be widely used in all circuits whose common terminals are made by output terminals.

Key words: RTD, planar RTD, ions implantation, MOBILE

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    Received: 18 August 2015 Revised: 23 May 2006 Online: Published: 01 December 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(12): 2167-2172
      Guo Weilian, Liang Huilai, Zhang Shilin, Hu Liuchang, Mao Luhong, Song Ruiliang, Niu Pingjuan, Wang Wei, Shang Yuehui, Wang Guoquan, Feng Zhen. Design and Fabrication of a Planar RTD and Its MOBILE[J]. Journal of Semiconductors, 2006, 27(12): 2167-2172. ****Guo W L, Liang H L, Zhang S L, Hu L C, Mao L H, Song R L, Niu P J, Wang W, Shang Y H, Wang G Q, Feng Z. Design and Fabrication of a Planar RTD and Its MOBILE[J]. Chin. J. Semicond., 2006, 27(12): 2167.
      Citation:
      Guo Weilian, Liang Huilai, Zhang Shilin, Hu Liuchang, Mao Luhong, Song Ruiliang, Niu Pingjuan, Wang Wei, Shang Yuehui, Wang Guoquan, Feng Zhen. Design and Fabrication of a Planar RTD and Its MOBILE[J]. Journal of Semiconductors, 2006, 27(12): 2167-2172. ****
      Guo W L, Liang H L, Zhang S L, Hu L C, Mao L H, Song R L, Niu P J, Wang W, Shang Y H, Wang G Q, Feng Z. Design and Fabrication of a Planar RTD and Its MOBILE[J]. Chin. J. Semicond., 2006, 27(12): 2167.
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      Design and Fabrication of a Planar RTD and Its MOBILE

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China

      • The 13th Research Institute,China Electronics Technology Group Cor

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China

      • School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China

      • School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-04-19
      • Revised Date: 2006-05-23
      • Published Date: 2006-12-04

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