Chin. J. Semicond. > 1999, Volume 20 > Issue 4 > 292-297
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HEMT结构材料中二维电子气的输运性质研究

张兴宏 , 夏冠群 , 徐元森 , 徐波 , 杨玉芬 and 王占国

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(4): 292-297
      张兴宏, 夏冠群, 徐元森, 徐波, 杨玉芬, 王占国. HEMT结构材料中二维电子气的输运性质研究[J]. 半导体学报(英文版), 1999, 20(4): 292-297.
      Citation:
      张兴宏, 夏冠群, 徐元森, 徐波, 杨玉芬, 王占国. HEMT结构材料中二维电子气的输运性质研究[J]. 半导体学报(英文版), 1999, 20(4): 292-297.
      shu

      • Received Date: 2015-08-20

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