Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 152-157
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在V_g=V_d/2应力模式下2 5nm氧化层pMOSFETs的新寿命预测模型(英文)

胡靖 , 赵要 , 许铭真 and 谭长华

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Key words: 热载流子, 复合, 电子注入, 二次碰撞电离

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 152-157
      胡靖, 赵要, 许铭真, 谭长华. 在V_g=V_d/2应力模式下2 5nm氧化层pMOSFETs的新寿命预测模型(英文)[J]. 半导体学报(英文版), 2004, 25(2): 152-157.
      Citation:
      胡靖, 赵要, 许铭真, 谭长华. 在V_g=V_d/2应力模式下2 5nm氧化层pMOSFETs的新寿命预测模型(英文)[J]. 半导体学报(英文版), 2004, 25(2): 152-157.
      shu

      • Received Date: 2015-08-19

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