| Citation: |
Yu Jinyong, Liu Xinyu, Su Shubing, Wang Runmei, Xu Anhuai, Qi Ming. InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge[J]. Journal of Semiconductors, 2007, 28(2): 154-158.
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Yu J Y, Liu X Y, Su S B, Wang R M, Xu A H, Qi M. InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge[J]. Chin. J. Semicond., 2007, 28(2): 154.
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InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge
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Abstract
An InP-based single-heterojunction bipolar transistor (SHBT) with base μ-bridge and emitter air-bridge is reported.Because those bridges reduce parasitic capacitance greatly,the cutoff frequency fT of the 2μm×12.5μm InP SHBT without de-embedding reaches 178GHz.It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.-
Keywords:
- InP,
- HBT,
- μ-bridge,
- air-bridge,
- self-aligning
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References
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Proportional views
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