Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1002-1006
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多晶硅后热退火引起SiO_2栅介质可靠性下降的原因分析及其抑制方法

高文钰 , 刘忠立 , 于芳 and 张兴

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Key words: 栅介质, 性能退化, 氮化, 可靠性

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 1002-1006
      高文钰, 刘忠立, 于芳, 张兴. 多晶硅后热退火引起SiO_2栅介质可靠性下降的原因分析及其抑制方法[J]. 半导体学报(英文版), 2001, 22(8): 1002-1006.
      Citation:
      高文钰, 刘忠立, 于芳, 张兴. 多晶硅后热退火引起SiO_2栅介质可靠性下降的原因分析及其抑制方法[J]. 半导体学报(英文版), 2001, 22(8): 1002-1006.
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      • Received Date: 2015-08-20

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