Chin. J. Semicond. > 1999, Volume 20 > Issue 4 > 287-291
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GSMBE外延生长GeSi/Sip-n异质结二极管

刘学锋 , 王玉田 , 刘金平 , 李建平 , 李灵霄 , 孙殿照 , 孔梅影 and 林兰英

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(4): 287-291
      刘学锋, 王玉田, 刘金平, 李建平, 李灵霄, 孙殿照, 孔梅影, 林兰英. GSMBE外延生长GeSi/Sip-n异质结二极管[J]. 半导体学报(英文版), 1999, 20(4): 287-291.
      Citation:
      刘学锋, 王玉田, 刘金平, 李建平, 李灵霄, 孙殿照, 孔梅影, 林兰英. GSMBE外延生长GeSi/Sip-n异质结二极管[J]. 半导体学报(英文版), 1999, 20(4): 287-291.
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      • Received Date: 2015-08-20

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