Chin. J. Semicond. > 1989, Volume 10 > Issue 4 > 276-279
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单晶硅中磷离子注入缺陷的HREM研究

严勇 , 李齐 , 冯端 , 孙慧龄 and 王培大

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(4): 276-279
      严勇, 李齐, 冯端, 孙慧龄, 王培大. 单晶硅中磷离子注入缺陷的HREM研究[J]. 半导体学报(英文版), 1989, 10(4): 276-279.
      Citation:
      严勇, 李齐, 冯端, 孙慧龄, 王培大. 单晶硅中磷离子注入缺陷的HREM研究[J]. 半导体学报(英文版), 1989, 10(4): 276-279.
      shu

      • Received Date: 2015-08-19

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