Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1052-1056
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6H-SiC高压肖特基势垒二极管

王姝睿 , 刘忠立 , 徐萍 , 葛永才 , 姚文卿 and 高翠华

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Key words: 碳化硅, 肖特基势垒二极管, 6H-SiC

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 1052-1056
      王姝睿, 刘忠立, 徐萍, 葛永才, 姚文卿, 高翠华. 6H-SiC高压肖特基势垒二极管[J]. 半导体学报(英文版), 2001, 22(8): 1052-1056.
      Citation:
      王姝睿, 刘忠立, 徐萍, 葛永才, 姚文卿, 高翠华. 6H-SiC高压肖特基势垒二极管[J]. 半导体学报(英文版), 2001, 22(8): 1052-1056.
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      • Received Date: 2015-08-20

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