Chin. J. Semicond. > 1998, Volume 19 > Issue 7 > 489-492
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Si晶体中Cu和Fe杂质在Frank型位错上的不同沉淀行为

沈波 , 陈鹏 , 陈志忠 , 张荣 , 施毅 , 关口隆史 and 角野浩二

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(7): 489-492
      沈波, 陈鹏, 陈志忠, 张荣, 施毅, 关口隆史, 角野浩二. Si晶体中Cu和Fe杂质在Frank型位错上的不同沉淀行为[J]. 半导体学报(英文版), 1998, 19(7): 489-492.
      Citation:
      沈波, 陈鹏, 陈志忠, 张荣, 施毅, 关口隆史, 角野浩二. Si晶体中Cu和Fe杂质在Frank型位错上的不同沉淀行为[J]. 半导体学报(英文版), 1998, 19(7): 489-492.
      shu

      • Received Date: 2015-08-18

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