Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Xiong Deping; Ren Xiaomin; Wang Qi; Shu Wei; Zhou Jing; Lü Jihe; Huang Hui; Huang Yongqing

Chin. J. Semicond. > 2007, Volume 28 > Issue 6 > 860-864

PAPERS

Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Xiong Deping, Ren Xiaomin, Wang Qi, Shu Wei, Zhou Jing, Lü Jihe, Huang Hui and Huang Yongqing

+ Author Affiliations

Abstract: The band gaps of ternary zinc blende BxIn1-xP and BxGa1-xP alloys are calculated using first principles in the generalized gradient approximation (GGA),and their bowing parameters are obtained.For BxIn1-xP,the bowing parameters are b_Eg(Γ)=4.32eV and b_Eg(X)=1.8eV,the crossover composition from direct to indirect gap is 0.47,the direct gap varies from 1.33 to 1.47eV,and the addition of a small amount of B will reduce the alloy gap.For BxGa1-xP,the whole x range is indirect gap,and the bowing parameters are b_Eg(Γ)=1.37eV and b_Eg(X)=2.46eV.The reason that BxIn1-xP and BxGa1-xP have relatively large bowing parameters is the large lattice mismatch between their binary alloys.

Key words: boride alloy, bowing parameter, band-gap, GGA

1	Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor Raheela Rasool, Najeeb-ud-Din, G. M. Rather Journal of Semiconductors, 2019, 40(12): 122401. doi: 10.1088/1674-4926/40/12/122401
2	Direct or indirect band gap Junyi Zhu Journal of Semiconductors, 2019, 40(3): 030202. doi: 10.1088/1674-4926/40/3/030202
3	ZnO_1-xTe_x and ZnO_1-xS_x semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis Utsa Das, Partha P. Pal Journal of Semiconductors, 2017, 38(8): 082001. doi: 10.1088/1674-4926/38/8/082001
4	Band gap bowing and crossing of B_xGa_1-xN alloy investigated by hybrid functional method Jiaping Jiang, Yanqin Gai, Gang Tang Journal of Semiconductors, 2016, 37(2): 023004. doi: 10.1088/1674-4926/37/2/023004
5	Hybrid functional calculations on the band gap bowing parameters of In_xGa_1-xN Mei Lin, Yixu Xu, Jianhua Zhang, Shunqing Wu, Zizhong Zhu, et al. Journal of Semiconductors, 2016, 37(4): 042001. doi: 10.1088/1674-4926/37/4/042001
6	The calculation of band gap energy in zinc oxide films Ali Arif, Okba Belahssen, Salim Gareh, Said Benramache Journal of Semiconductors, 2015, 36(1): 013001. doi: 10.1088/1674-4926/36/1/013001
7	Effect of band gap energy on the electrical conductivity in doped ZnO thin film Said Benramache, Okba Belahssen, Hachemi Ben Temam Journal of Semiconductors, 2014, 35(7): 073001. doi: 10.1088/1674-4926/35/7/073001
8	Parameters influencing the optical properties of SnS thin films Priyal Jain, P. Arun Journal of Semiconductors, 2013, 34(9): 093004. doi: 10.1088/1674-4926/34/9/093004
9	Correlation between electrical conductivity-optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films Said Benramache, Okba Belahssen, Abderrazak Guettaf, Ali Arif Journal of Semiconductors, 2013, 34(11): 113001. doi: 10.1088/1674-4926/34/11/113001
10	S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT Z. Hamaizia, N. Sengouga, M. C. E. Yagoub, M. Missous Journal of Semiconductors, 2012, 33(2): 025001. doi: 10.1088/1674-4926/33/2/025001
11	Prediction of semiconducting behavior in minority spin of Co₂CrZ (Z = Ga, Ge, As): LSDA D. P. Rai, R. K. Thapa Journal of Semiconductors, 2012, 33(12): 123001. doi: 10.1088/1674-4926/33/12/123001
12	A 0.18 μm CMOS dual-band low power low noise amplifier for a global navigation satellite system Li Bing, Zhuang Yiqi, Li Zhenrong, Jin Gang Journal of Semiconductors, 2010, 31(12): 125001. doi: 10.1088/1674-4926/31/12/125001
13	A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology Su Shi, Liao Xiaoping Journal of Semiconductors, 2009, 30(5): 054004. doi: 10.1088/1674-4926/30/5/054004
14	Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide Feng Song, Gao Yong, Yang Yuan, Feng Yuchun Journal of Semiconductors, 2009, 30(8): 084008. doi: 10.1088/1674-4926/30/8/084008
15	Temperature: a critical parameter affecting the optical properties of porous silicon Long Yongfu, Ge Jin, Ding Xunmin, Hou Xiaoyuan Journal of Semiconductors, 2009, 30(6): 063002. doi: 10.1088/1674-4926/30/6/063002
16	Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization Fu Jun Journal of Semiconductors, 2009, 30(8): 084005. doi: 10.1088/1674-4926/30/8/084005
17	A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions Ma Desheng, Shi Yin, Dai Fa Foster Chinese Journal of Semiconductors , 2006, 27(6): 970-975.
18	Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei, Shen Huajun, et al. Chinese Journal of Semiconductors , 2006, 27(5): 765-768.
19	Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al. Chinese Journal of Semiconductors , 2006, 27(3): 397-402.
20	Parameter Extraction for 2-π Equivalent Circuit Modelof RF CMOS Spiral Inductors Gao Wei, Yu Zhiping Chinese Journal of Semiconductors , 2006, 27(4): 667-673.

Search

GET CITATION

Xiong Deping, Ren Xiaomin, Wang Qi, Shu Wei, Zhou Jing, Lü Jihe, Huang Hui, Huang Yongqing. Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys[J]. Journal of Semiconductors, 2007, 28(6): 860-864.

Xiong D P, Ren X M, Wang Q, Shu W, Zhou J, Lü J, Huang H, Huang Y Q. Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys[J]. Chin. J. Semicond., 2007, 28(6): 860.

Export: BibTex EndNote

Article Metrics

Article views: 3089 Times PDF downloads: 2777 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 26 January 2007 Online: Published: 01 June 2007

The band gaps of ternary zinc blende BxIn1-xP and BxGa1-xP alloys are calculated using first principles in the generalized gradient approximation (GGA),and their bowing parameters are obtained.For BxIn1-xP,the bowing parameters are b_Eg(Γ)=4.32eV and b_Eg(X)=1.8eV,the crossover composition from direct to indirect gap is 0.47,the direct gap varies from 1.33 to 1.47eV,and the addition of a small amount of B will reduce the alloy gap.For BxGa1-xP,the whole x range is indirect gap,and the bowing parameters are b_Eg(Γ)=1.37eV and b_Eg(X)=2.46eV.The reason that BxIn1-xP and BxGa1-xP have relatively large bowing parameters is the large lattice mismatch between their binary alloys.

Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Abstract

References

Proportional views

Catalog

Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Theoretical Analysis of Band-Gap Properties of BxIn1-xP and BxGa1-xP Alloys

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content