Chin. J. Semicond. > 1984, Volume 5 > Issue 5 > 498-507
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MIS结构C-t过程的动力学分析及少数载流子产生寿命空间分布测量

陈开茅 , 陈凯来 and 王忠安

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(5): 498-507
      陈开茅, 陈凯来, 王忠安. MIS结构C-t过程的动力学分析及少数载流子产生寿命空间分布测量[J]. 半导体学报(英文版), 1984, 5(5): 498-507.
      Citation:
      陈开茅, 陈凯来, 王忠安. MIS结构C-t过程的动力学分析及少数载流子产生寿命空间分布测量[J]. 半导体学报(英文版), 1984, 5(5): 498-507.
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      • Received Date: 2015-08-20

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