| Citation: |
Ma Tongda, Tu Hailing, Shao Beiling, Liu Ansheng, Hu Guangyong. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Journal of Semiconductors, 2006, 27(S1): 175-178.
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Ma T D, Tu H L, Shao B L, Liu A S, Hu G Y. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Chin. J. Semicond., 2006, 27(13): 175.
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High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI
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Abstract
High resolution X-ray double-crystal diffraction (DCD),triple-axis diffraction (TAD),and TAD reciprocal lattice mapping (RLM) are employed to characterize Si/SiGe/Si heterostructures on SOI.The crystallographic misalignment within the layers,and Ge concentration and relaxation percentage of the SiGe layer are measured using TAD combined with DCD (TAD-DCD).TAD RLM can present necessary structural parameters of Si/SiGe/Si heterostructures on SOI.The strain in the thin Si capping layer is determined by high resolution TAD RLM.-
Keywords:
- TAD-DCD,
- RLM,
- strained Si
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References
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Proportional views
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